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arXiv 2201.10425quant-phcond-mat.supr-con
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具有超导硅通孔的量子位兼容衬底

Qubit-compatible substrates with superconducting through-silicon vias

K. Grigoras, N. Yurttagül, J. -P. Kaikkonen, E. T. Mannila, P. Eskelinen, D. P. Lozano, H. -X. Li, M. Rommel, D. Shiri, N. Tiencken, S. Simbierowicz, A. Ronzani… 展开作者

K. Grigoras, N. Yurttagül, J. -P. Kaikkonen, E. T. Mannila, P. Eskelinen, D. P. Lozano, H. -X. Li, M. Rommel, D. Shiri, N. Tiencken, S. Simbierowicz, A. Ronzani, J. Hätinen, D. Datta, V. Vesterinen, L. Grönberg, J. Biznárová, A. Fadavi Roudsari, S. Kosen, A. Osman, M. Prunnila, J. Hassel, J. Bylander, J. Govenius

摘要:

我们制作和表征超导穿硅通孔和电极适用于超导量子处理器。我们测量内部品质因数的一百万测试谐振器在单光子水平激发,在芯片上的超导过孔用于缝合接地层的正面和背面的芯片。这种谐振器性能与硅基平面解决方案的最新技术水平相当,尽管存在过孔。接地层的过孔拼接是增加量子处理器芯片物理尺寸的重要技术,也是迈向更复杂的三维集成量子器件的第一步。

英文摘要:

We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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