AI 中文总结
该研究揭示低温下标准电阻率SOI衬底比高阻SOI衬底更优，明确高阻SOI衬底的主导损耗机制为界面寄生薄层导电，通过引入陷阱可抑制该损耗，为超导纳米机电系统开发提供了可行衬底方案。
AI 中文摘要
绝缘硅（Silicon-on-insulator, SOI）技术被广泛用于制造硅基器件，涵盖先进晶体管、光子电路或纳米机械系统等领域。将低损耗超导量子电路与SOI衬底集成，可将成熟硅技术的优势与超导电路的极高灵敏度相结合。源自超导微波器件研究的常规方法，是采用以低微波损耗著称的高阻硅衬底。本研究利用超导微波谐振器证实，与直觉相反，在低温环境下，标准电阻率SOI衬底的性能优于高阻SOI衬底；后者中，体硅与氧化硅界面处存在的寄生薄层导电是主导损耗机制，该寄生薄层可通过引入有意陷阱的衬底加以抑制，在此类衬底中，损耗最终受限于氧化硅层的介电损耗。这类衬底为超导纳米机电系统的开发提供了良好前景：其一，释放（即去除氧化硅）可仅限定于运动部件，从而保持器件其余部分的机械完整性；其二，该结构可增强向衬底体部的热排出，解决了当前微波-光学转换器等器件存在的热排出问题。
英文摘要
Silicon-on-insulator technology is widely used to fabricate silicon based devices, from advanced transistors to photonic circuits or nanomechanical systems. Integrating low loss superconducting quantum circuits with silicon-on-insulator substrates enables to couple the advantages offered by the mature silicon technology to the exquisite sensitivity of superconducting circuits. The natural approach, inherited from research in superconducting microwave devices, is to use a substrate made with highly resistive silicon, known for its low level of microwave losses. In this work, using superconducting microwave resonators, we show that counterintuitively, standard resistivity silicon-on-insulator substrates perform better than high resistivity silicon-on-insulator substrates at cryogenic temperatures. In the latter case, the presence of a parasitic sheet conduction at the interface between bulk silicon and silicon oxide acts as the dominant loss mechanism. This parasitic sheet can be suppressed using substrates with intentionally induced traps. In such substrates, losses are ultimately limited by the dielectric losses of the silicon oxide layer. These substrates offer interesting perspectives for the development of superconducting nanoelectromechanical systems. First, the release, i.e. the removal of the silicon oxide, could be limited to the moving parts, thereby maintaining the mechanical integrity of the rest of the device. Additionally, such structure would enhance heat evacuation into the bulk of the substrate which is an issue in current devices such as microwave-to-optics converters.
Comments25 pages, 4 figures
