发表机构
University of Jyväskylä; QuTech; Netherlands Organisation for Applied Scientific Research (TNO); Kavli Institute of Nanoscience, Delft University of Technology（于韦斯屈莱大学; 奎泰克; 荷兰应用科学研究组织; 代尔夫特理工大学卡弗里纳米科学研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文在绝缘体上硅衬底上首次实现施主束缚激子的系综光电探测，利用俄歇复合产生电信号进行自旋读出，并观察到共振波长偏移和线宽展宽。
AI 中文摘要
硅中施主束缚电子的自旋已被证明是一个非常相干的量子比特系统，但缺乏相干的光学接口。然而，确实存在一种施主束缚激子跃迁，可以通过光学方式激发，但主要通过俄歇复合衰减，产生电信号。这为自旋读出提供了一条光电途径。将此读出扩展到单自旋水平，需要将自旋与硅光子学接口，以实现光子的高效导引，这反过来又需要转向绝缘体上硅（SOI）衬底。在这里，我们首次展示了SOI材料中施主束缚激子的系综光电测量，包括同位素纯化的28-Si器件层。实验表明，与体材料实验相比，共振波长发生了显著偏移，跃迁线宽也发生了展宽。
英文摘要
Spin of a donor bound electron in silicon has been shown to be a very coherent qubit system but lacks a coherent optical interface. There does, however, exist a donor bound exciton transition that can be excited optically but decays dominantly via an Auger recombination producing an electrical signal. This provides an opto-electrical pathway for spin readout. Scaling this readout to single-spin level will require interfacing the spins with silicon photonics for efficient guiding of photons, which in turn will require moving to silicon-on-insulator (SOI) substrates. Here we demonstrate first ensemble opto-electronic measurements of donor bound excitons in SOI material, including isotopically purified 28-Si device layers. The experiments show pronounced shifts in the resonance wavelengths and broadenings of the transition linewidths compared to the bulk experiments.
Comments8 pages, 5 figures
