arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2201.09664cond-mat.mtrl-scicond-mat.softphysics.app-ph
收藏

揭示钙钛矿太阳能电池中的掺杂密度及其对器件性能的影响

Revealing the doping density in perovskite solar cells and its impact on device performance

Francisco Peña-Camargo, Jarla Thiesbrummel, Hannes Hempel, Artem Musiienko, Vincent M. Le Corre, Jonas Diekmann, Jonathan Warby, Thomas Unold, Felix Lang, Diete… 展开作者

Francisco Peña-Camargo, Jarla Thiesbrummel, Hannes Hempel, Artem Musiienko, Vincent M. Le Corre, Jonas Diekmann, Jonathan Warby, Thomas Unold, Felix Lang, Dieter Neher, Martin Stolterfoht

AI总结:

本文通过多种光学和电学方法系统测定了铅卤化物钙钛矿的掺杂密度上限,发现其远低于影响器件性能的临界阈值,并用漂移-扩散模拟证实低掺杂密度不影响钙钛矿太阳能电池性能。

摘要:

传统无机半导体可以实现高精度的电子掺杂。相比之下,关于金属卤化物钙钛矿中电子掺杂密度的评估仍然存在推测,更不用说对其加以控制了。本文提出了一种多层面的方法来确定一系列不同铅卤化物钙钛矿体系的电子掺杂密度。光学和电学表征技术,包括强度依赖和瞬态光致发光、交流霍尔效应、转移长度法以及电荷提取测量,在量化掺杂密度上限方面发挥了关键作用。随后将所得值与短路条件下单位体积电极上的电荷进行比较,该值约为 $10^{16}$ cm$^{-3}$。该数值等于电容 $C$ 与内建电势 $V_\mathrm{bi}$ 的乘积,代表了一个临界极限,低于该极限时掺杂诱导的电荷不会影响器件性能。实验结果一致表明,对于所有常见的铅基金属卤化物钙钛矿,掺杂密度均低于这一临界阈值($<10^{12}$ cm$^{-3}$,即单位体积内 $<CV_\mathrm{bi}$)。然而,尽管掺杂诱导的电荷密度过低,不足以重新分布钙钛矿活性层中的内建电压,但可移动离子的数量足够多,能够在活性层中形成空间电荷区,类似于掺杂的 pn 结。这些结果得到了漂移-扩散模拟的有力支持,模拟证实如此低的掺杂密度不会影响器件性能。

英文摘要:

Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic doping density in metal-halide perovskites, not to mention of a control thereof. This paper presents a multifaceted approach to determine the electronic doping density for a range of different lead-halide perovskite systems. Optical and electrical characterisation techniques comprising intensity-dependent and transient photoluminescence, AC Hall effect, transfer-length-methods, and charge extraction measurements were instrumental in quantifying an upper limit for the doping density. The obtained values are subsequently compared to the charge on the electrodes per unit volume at short-circuit conditions, which amounts to roughly $10^{16}$ cm$^{-3}$. This figure equals the product of the capacitance $C$ and the built-in potential $V_\mathrm{bi}$ and represents the critical limit below which doping-induced charges do not influence the device performance. The experimental results demonstrate consistently that the doping density is below this critical threshold ($<10^{12}$ cm$^{-3}$ which means $<CV_\mathrm{bi}$ per unit volume) for all common lead-based metal-halide perovskites. Nevertheless, although the density of doping-induced charges is too low to redistribute the built-in voltage in the perovskite active layer, mobile ions are present in sufficient quantities to create space-charge-regions in the active layer, reminiscent of doped pn-junctions. These results are well supported by drift-diffusion simulations which confirm that the device performance is not affected by such low doping densities.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑