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arXiv 2201.04695physics.opticsphysics.ins-det
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高温等离子体红外探测器

High operating temperature plasmonic infrared detectors

L. Nordin, A. J. Muhowski, D. Wasserman

备注：
The following article has been submitted to Applied Physics Letters. After it is published, it will be found at https://aip.scitation.org/journal/apl
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摘要：

III-V族半导体II型超晶格（T2 SL）是一种有前途的材料系统，其具有显著降低在高温下的红外光电探测器的暗电流并因此实现高性能的红外光电探测器的潜力。然而，T2 SL一直在努力满足长期选择的红外探测器材料HgCdTe所设定的性能指标。最近，外延等离子体探测器架构已经证明T2 SL探测器性能在77 K - 195 K的温度范围内与HgCdTe相当。在这里，我们展示了一个高工作温度的等离子体T2 SL检测器架构，在两级热电冷却器可达到的温度下具有高性能操作。具体来说，我们展示了长波红外等离子体探测器在高达230 K的温度下工作，同时保持暗电流低于“规则07”启发式。在230 K的检测器工作温度下，我们实现了22.8%的外量子效率，在一个检测器吸收只有372 nm厚（$\simλ_0 /25$），峰值比探测率为$2.29x10^{9}$厘米赫兹$^{1/2}$ W $^{-1}$在9.6 $μ$ m，远高于商业探测器在相同的工作温度。

英文摘要：

III-V semiconductor type-II superlattices (T2SLs) are a promising material system with the potential to significantly reduce the dark current of, and thus realize high-performance in, infrared photodetectors at elevated temperatures. However, T2SLs have struggled to meet the performance metrics set by the longstanding infrared detector material of choice, HgCdTe. Recently, epitaxial plasmonic detector architectures have demonstrated T2SL detector performance comparable to HgCdTe in the 77 K - 195 K temperature range. Here we demonstrate a high operating temperature plasmonic T2SL detector architecture with high-performance operation at temperatures accessible with two-stage thermoelectric coolers. Specifically, we demonstrate long-wave infrared plasmonic detectors operating at temperatures as high as 230 K while maintaining dark currents below the "Rule 07" heuristic. At a detector operating temperature of 230 K, we realize 22.8% external quantum efficiency in a detector absorber only 372 nm thick ($\simλ_0 /25$) with peak specific detectivity of $2.29x10^{9}$ cm Hz$^{1/2}$ W$^{-1}$ at 9.6 $μ$m, well above commercial detectors at the same operating temperature.

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