硫族元素超掺杂硅中的中远红外局域表面等离子体共振
Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
摘要：
红外区域中的等离子体传感采用分子的振动指纹与等离子体共振的直接相互作用，从而创建优于传统光谱学的表面增强传感平台。然而，用于等离子体共振的标准贵金属遭受高辐射损耗以及制造挑战，例如将光谱共振位置调谐到中红外到远红外区域，以及与现有互补金属氧化物半导体（CMOS）制造平台的兼容性问题。在这里，我们证明了中红外局域表面等离子体共振（LSPR）的发生在薄的Si薄膜超掺杂与已知的深层次杂质碲。我们表明，中红外LSPR可以进一步增强和光谱扩展到远红外范围内，通过制造二维阵列的微米尺寸的天线在Te-超掺杂硅芯片。由于Te-超掺杂Si也可以用作红外光电探测器，我们相信我们的研究结果将开启等离子体传感器与单芯片CMOS平台直接集成的路线，大大提高了大规模制造高性能等离子体传感系统的可能性。
英文摘要：
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the one-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems.
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