X-Ray Silicon Drift Detector-CMOS Front-End System with High Energy Resolution at Room Temperature
G. Bertuccio, M. Ahangarianabhari, C. Graziani, D. Macera, Y. Shi, M. Gandola, A. Rachevski, I. Rashevskaya, A. Vacchi, G. Zampa, N. Zampa, P. Bellutti, G. Giac… 展开作者
G. Bertuccio, M. Ahangarianabhari, C. Graziani, D. Macera, Y. Shi, M. Gandola, A. Rachevski, I. Rashevskaya, A. Vacchi, G. Zampa, N. Zampa, P. Bellutti, G. Giacomini, A. Picciotto, C. Piemonte, N. Zorzi
发表信息：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 63, NO. 1, FEBRUARY 2016, pp. 400-406
We present a spectroscopic system constituted by a Silicon Drift Detector (SDD) coupled to a CMOS charge sensitive preamplifier, named SIRIO, specifically designed to reach ultimate low noise levels. The SDD, with an active area of 13 mm , has been manufactured by optimizing the production processes in order to reduce the anode current, successfully reaching current densities between 17 pA/cm and 25 pA/cm at 20 for drift fields ranging from 100 V/cm to 500 V/cm. The preamplifier shows minimum intrinsic noise levels of 1.27 and 1.0 electrons r.m.s. at 20 and 30 , respectively. At room temperature ( ) the 5.9 keV and the pulser lines have 136 eV and 64 eV FWHM, respectively, corresponding to an equivalent noise charge of 7.4 electrons r.m.s.; the noise threshold is at 165 eV. The energy resolution, as measured on the pulser line, ranges from 82 eV FWHM (9.4 electrons r.m.s.) at 30C down to 29 eV FWHM (3.3 electrons r.m.s.) at 30C .
The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. Device-level characterization showed threshold voltage change of less than 170 mV and leakage current change of less than 1 nA for individual nMOSFET and pMOSFET devices at a total dose of 100 krad(SiO2). The increase in power supply current at the circuit level was less than 5%, consistent with the small change in off-state transistor leakage current. The technology exhibits good characteristics for use in the electr…
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sensor design. The performance of a 100 $\mathrmμ$m thin passive CMOS sensor with a pixel pitch of 50 $\mathrmμ$m at different irradiation levels, 5 $\times$ 10$^{15}$n$_{\mathrm{eq}}$cm$^{-2}$ and 1 $\ti…
We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry and the performance, with biasing structures in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototyping production of strip test-structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150$\,$nm CMOS process. This paper will focus on the characterization of irradiated and non-irradiated pixel modules, comp…
Silicon p-n junction diodes emit low-intensity, broad-spectrum light near 1120 nm in forward bias and between 400-900 nm in reverse bias (avalanche). For the first time, we experimentally achieve optical absorption sensing of pigment in solution with silicon micro LEDs designed in a standard silicon-on-insulator CMOS technology. By driving a single LED in both forward and avalanche modes of operation, we steer its electroluminescent spectrum between visible and near-infrared (NIR). We then characterize the vertical optical transmission of both visible and NIR light from the LED through the sam…
The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation…
Recently CMOS (complementary metal-oxide semiconductor) sensors have progressed to a point where they may offer improved performance in imaging x-ray detection compared to the CCDs often used in x-ray satellites. We demonstrate x-ray detection in the soft x-ray band (250-1700 eV) by a commercially available back-illuminated Sony IMX290LLR CMOS sensor using the Advanced Photon Source at the Argonne National Laboratory. While operating the device at room temperature, we measure energy resolutions (FWHM) of 48 eV at 250 eV and 83 eV at 1700 eV which are comparable to the performance of the Chandr…
Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider experiments. With the ever-increasing area covered by silicon tracking detectors cost effective alternatives to the current silicon sensors and more integrated designs are desirable. This article describes results obtained from laboratory measurements of silicon strip sensors produced in a passive p-CMOS process. Electrical characterization and charge collection measur…
In this paper, we describe the development of monolithic pixel detectors by using a Silicon-on-Insulator (SOI) technology for X-ray and charged particle applications. The detectors are based on a 0.2 μm CMOS fully depleted SOI process (Lapis Semiconductor Co., Ltd). The SOI wafer consists of a thick high-resistivity substrate for sensing and a thin low resistivity Si layer for CMOS circuits. We developed the integration-type SOI pixel detector, INTPIX4 mainly for X-ray imaging; it is made of a Float Zone (FZ) or Czochralski (Cz) silicon wafer. Since 2005, Cz SOI detectors were used initially. …
We report on the effects of ionizing radiation on 65nm CMOS transistors held at approximately -20C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.
The CLIC Tracker Detector (CLICTD) is a monolithic pixelated sensor chip produced in a $180$ nm imaging CMOS process built on a high-resistivity epitaxial layer. The chip, designed in the context of the CLIC tracking detector study, comprises a matrix of ${16\times128}$ elongated pixels, each measuring ${300\times30}$ $μ$m$^2$. To ensure prompt charge collection, every elongated pixel is segmented in eight sub-pixels, each containing a collection diode and a separate analog front-end. A simultaneous $8$-bit time measurement with $10$ ns time bins and $5$-bit energy measurement with programmabl…
High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in the development of depleted CMOS silicon detectors, which could achieve similar performances at lower cost of production and complexity. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, and the first fully monolithi…
Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors. A successful proof of concept would open the market potential of CMOS foundries to the HEP community, which would be most beneficial in terms of availability, throughput and cost. In addition, the availability of multi-layer routing of signals will provide the freedom to o…
The control interface of a large-scale quantum computer will likely require electronic sub-systems that operate in close proximity to the qubits, at deep cryogenic temperatures. Here, we report the low-temperature performance of custom cryo-CMOS band-gap reference circuits designed to provide stable voltages and currents on-chip, independent of local temperature fluctuations. Our circuits are fabricated in 0.35 um silicon Germanium (SiGe) BiCMOS and 28 nm Fully Depleted Silicon On Insulator (FDSOI) CMOS processes, and we compare the performance of each. Beyond their specific application as low…
High Voltage CMOS sensors are a promising technology for tracking detectors in collider experiments. Extensive R&D studies are being carried out by the ATLAS Collaboration for a possible use of HV-CMOS in the High Luminosity LHC upgrade of the Inner Tracker detector. CaRIBOu (Control and Readout Itk BOard) is a modular test system developed to test Silicon based detectors. It currently includes five custom designed boards, a Xilinx ZC706 development board, FELIX (Front-End LInk eXchange) PCIe card and a host computer. A software program has been developed in Python to control the CaRIBOu hardw…
Here, we propose titanium nitride (TiN) as an alternative plasmonic material for an on-chip silicon plasmonic Schottky photodetector that is based on an internal photoemission process and operating at telecom wavelengths. The examined structure employs an asymmetric metal-semiconductor-metal waveguide structure with one of the electrodes being gold and the second either gold, titanium or titanium nitride. Apart from the excellent optical properties desired for this type of photodetector such as high absorption losses and reasonably high real part of the permittivity, titanium nitride is a CMOS…
In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k$Ω$cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. Depletion depth was measured with Edge-TCT. Effective space charge concentration $N_{\mathrm{eff}}$ was estimated from the dependence of depletion depth on bias voltage and studied as a function of neutron fluence. Dependence of $N_{\mathrm{eff}}$ on fluence change…
Collider detectors have taken advantage of the resolution and accuracy of silicon detectors for at least four decades. Future colliders will need large areas of silicon sensors for low mass trackers and sampling calorimetry. Monolithic Active Pixel Sensors (MAPS), in which Si diodes and readout circuitry are combined in the same pixels, and can be fabricated in some of standard CMOS processes, are a promising technology for high-granularity and light detectors. In this paper we review 1) the requirements on MAPS for trackers and electromagnetic calorimeters (ECal) at future colliders experimen…
The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon band gap energy, where the searches are most sensitive to low mass dark matter candidates. While such cross section data has been lacking from the literature, previous dark matter search experiments have attempted to estimate this parameter by extrapolating it from higher temperature data. However, discrepancies in the high temperature…
CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is optimised for fast charge collection and high spatial resolution. The sensor was developed to target the requirements for the tracking detector of the proposed future Compact Linear Collider (CLIC). Most notably, a temporal resolution of a few nanoseconds and a spatial resolution below 7 microns are demanded. In this contribution, the sensor performance mea…
The physics aims at the proposed future CLIC high-energy linear $e^+ e^-$ collider pose challenging demands on the performance of the detector system. In particular the vertex and tracking detectors have to combine precision measurements with robustness against the expected high rates of beam-induced backgrounds. A spatial resolution of a few microns and a material budget down to 0.2\% of a radiation length per vertex-detector layer have to be achieved together with a few nanoseconds time stamping accuracy. These requirements are addressed with innovative technologies in an ambitious detector …
A backside-illuminated (BSI) near-infrared enhanced silicon single-photon avalanche diode (SPAD) for time-of-flight (ToF) light detection and ranging applications is presented. The detector contains a 2 $μ$m wide multiplication region with a spherically-uniform electric field peak enforced by field-line crowding. A charge-focusing electric field extends into a 10 $μ$m deep absorption volume, whereby electrons generated in all corners of the device can move efficiently towards the multiplication region. The SPAD is integrated with a customized 130 nm CMOS technology and a dedicated BSI process.…
