Recently CMOS (complementary metal-oxide semiconductor) sensors have progressed to a point where they may offer improved performance in imaging x-ray detection compared to the CCDs often used in x-ray satellites. We demonstrate x-ray detection in the soft x-ray band (250-1700 eV) by a commercially available back-illuminated Sony IMX290LLR CMOS sensor using the Advanced Photon Source at the Argonne National Laboratory. While operating the device at room temperature, we measure energy resolutions (FWHM) of 48 eV at 250 eV and 83 eV at 1700 eV which are comparable to the performance of the Chandra ACIS and the Suzaku XIS. Furthermore, we demonstrate that the IMX290LLR can withstand radiation up to 17.1 krad, making it suitable for use on spacecraft in low earth orbit.
The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. Device-level characterization showed threshold voltage change of less than 170 mV and leakage current change of less than 1 nA for individual nMOSFET and pMOSFET devices at a total dose of 100 krad(SiO2). The increase in power supply current at the circuit level was less than 5%, consistent with the small change in off-state transistor leakage current. The technology exhibits good characteristics for use in the electr…
We report on the effects of ionizing radiation on 65nm CMOS transistors held at approximately -20C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.
We present a spectroscopic system constituted by a Silicon Drift Detector (SDD) coupled to a CMOS charge sensitive preamplifier, named SIRIO, specifically designed to reach ultimate low noise levels. The SDD, with an active area of 13 mm , has been manufactured by optimizing the production processes in order to reduce the anode current, successfully reaching current densities between 17 pA/cm and 25 pA/cm at 20 for drift fields ranging from 100 V/cm to 500 V/cm. The preamplifier shows minimum intrinsic noise levels of 1.27 and 1.0 electrons r.m.s. at 20 and 30 , respectively. At room temperatu…
The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation…
The depleted CMOS sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Its capability of integrating the sensing diode into the CMOS wafer hosting the front-end electronics allows for reduced noise and higher signal sensitivity. They are suitable for high radiation environments due to the possibility of applying high depletion voltage and the availability of relatively high resistivity substrates. The use of a CMOS commercial fabrication process leads to their cost reduction and allows faster construction of large area detec…
Characterization of Passive CMOS Strip Detectors After Proton Irradiation
TU Dortmund（多特蒙德工业大学）；Deutsches Elektronen Synchrotron DESY（德国电子同步加速器中心）；University of Bonn（波恩大学）；Albert-Ludwigs-Universität Freiburg（弗赖堡大学）；Fachhochschule Dortmund（多特蒙德应用技术大学）
The concept of capacitive coupling between sensors and readout chips is under study for the vertex detector at the proposed high-energy CLIC electron positron collider. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is an active High-Voltage CMOS sensor, designed to be capacitively coupled to the CLICpix2 readout chip. The chip is implemented in a commercial $180$ nm HV-CMOS process and contains a matrix of $128\times128$ square pixels with $25$ $μ$m pitch. First prototypes have been produced with a standard resistivity of $\sim20$ $Ω$cm for the substrate and tested in standalone mode.…
In this paper we present a method for obtention of neutron images with Commercial-Off-The-Shelf (COTS) CMOS image sensors through the activation of indium foils. This detection method has been designed specifically for the acquisition of thermal and epitermal neutron images in mixed beams with a high gamma flux, and also for the study of high radioactive samples that are usually placed into research reactor pools. We also present a technique to obtain multi-spectral neutron images taking advantage of the high neutron absorption cross-section of this material in the thermal energy range, as wel…
High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitization, zero suppression and data serialization. It is the first fully monolithic HV-CMOS pixel sensor that has been tested for the use in high irradiation environments like HL-LHC. We present results from laboratory and test beam measurements of MuPix7 prototypes irradiated with neutrons (up to $5.0\c…
Scientific Complementary Metal Oxide Semiconductor (sCMOS) sensors are finding increasingly more applications in astronomical observations, thanks to their advantages over charge-coupled devices (CCDs) such as a higher readout frame rate, higher radiation tolerance, and higher working temperature. In this work, we investigate the performance at the individual pixel level of a large-format sCMOS sensor, GSENSE1516BSI, which has 4096 * 4096 pixels, each of 15 μm in size. To achieve this, three areas on the sCMOS sensor, each consisting of 99 * 99 pixels, are chosen for the experiment. The readou…
An estimated 26 million people in low- and middle-income countries are at risk of lead exposure and there is no safe threshold for lead ingestion. Radio assay methods are not easily accessible in regions at risk, therefore a low cost and easy to use sensor is desirable. $\textrm{Pb}$ occurs together with traces of radioisotopes with decay energies in the range of $10$ to several \SI{100}{\kilo\electronvolt} and beyond. Such energies are accessible in silicon sensors. We have tested a scientific CMOS (Neo 5.5 sCMOS), optimised for optical wavelengths, as $γ$ detector for radiation in the range …
Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation toleran…
A number of critical active and passive components of optical links have been tested at 77 K or lower temperatures, demonstrating potential development of optical links operating inside the liquid argon time projection chamber (LArTPC) detector cryostat. A ring oscillator, individual MOSFETs, and a high speed 16:1 serializer fabricated in a commercial 0.25-um silicon-on-sapphire CMOS technology continued to function from room temperature to 4.2 K, 15 K, and 77 K respectively. Three types of laser diodes lase from room temperature to 77 K. Optical fibers and optical connectors exhibited minute …
We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral data processing blocks (e.g. Command Decoder, Trigger Buffer, etc.). It is a smaller version of 24 X 36 pixelated sensor in comparison to the earlier generation of ATLASPix1 fabricated in both ams AG, Austria, and TSI Semiconductors, USA. While ams produced ATLASPix2 showed breakdown voltage 50 V in nonirradiated condition as it was seen on its predecessors…
Fast, room temperature imaging at THz and sub-THz frequencies is an interesting feature which could unleash the full potential of plenty applications in security, healthcare and industrial production. In this Letter we introduce micromechanical bolometers based on silicon nitride trampoline membranes as broad-range detectors, down to the sub-THz frequencies. They show, at the largest wavelengths, room-temperature noise-equivalent-powers comparable to state-of-the-art commercial devices (~100 pW Hz-1/2); adding the good operation speed and the easy, large-scale fabrication process, the trampoli…
Refractive index sensing is a highly sensitive and label-free detection method for molecular binding events. Commercial implementations of biosensing concepts based on plasmon resonances typically require significant external instrumentation such as microscopes and spectrometers. Few concepts exist that are based on direct integration of plasmonic nanostructures with optoelectronic devices for on-chip integration. Here, we present a CMOS-compatible refractive index sensor consisting of a Ge heterostructure PIN diode in combination with a plasmonic nanohole array structured directly into the di…
Magnetic sensing is present in our everyday interactions with consumer electronics, and also demonstrates potential for measurement of extremely weak biomagnetic fields, such as those of the heart and brain. In this work, we leverage the many benefits of the micro-electromechanical systems (MEMS) devices to fabricate a small, low power, inexpensive sensor whose resolution is in the range of weak biomagnetic fields. The sensor works at room temperature, and is suitable for consumer electronics integration. At present, such biomagnetic fields can only be measured by expensive mechanisms such as …
Fabrication, characterization and comparison of gold and graphene micro- and nano-size Hall sensors for room temperature scanning magnetic field microscopy applications is presented. The Hall sensors with active areas from 5 $μ$m down to 50 nm were fabricated by electron-beam lithography. The calibration of the Hall sensors in an external magnetic field revealed a sensitivity of 3.2 mV/(AT) $\pm$ 0.3 % for gold and 1615 V/(AT) $\pm$ 0.5 % for graphene at room temperature. The gold sensors were fabricated on silicon nitride cantilever chips suitable for integration into commercial scanning prob…
