In this paper, we propose a novel memory-centric scheme based on CMOS SRAM for acceleration of data intensive applications. Our proposal aims at dynamically increasing the on-chip memory storage capacity of SRAM arrays on-demand. The proposed scheme called - Augmented Memory Computing allows an SRAM cell to operate in two different modes 1) the Normal mode and 2) the Augmented mode. In the Normal mode of operation, the SRAM cell functions like a standard 6 transistor (6T) SRAM cell, storing one bit of data in static format. While in the Augmented mode, each SRAM cell can store >1 bit of data (in a dynamic fashion). Specifically, we propose two novel SRAM cells - an 8 transistor (8T) dual bit storage augmented cell and a 7 transistor (7T) ternary bit storage augmented cell. The proposed 8T dual bit SRAM cell when operated in the Augmented mode, can store a static bit of data while also, simultaneously, storing another bit in a dynamic form. Thus, when operated in Augmented mode, the 8T SRAM cell can store two bits of data - one SRAM-like data and one DRAM-like data, thereby increasing or augmenting the memory storage capacity. On the other hand, the proposed 7T ternary bit storage augmented cell can either store a single SRAM data in Normal mode or can be configured to operate in Augmented mode, wherein it can store ternary data (3 levels (0,0), (0,1), (1,0)) in a dynamic manner. Thus, based on the mode of operation, the proposed augmented memory bit-cells can either store one static bit of data or >1 bit of data in a dynamic format. We show the feasibility of our proposed bit-cells through extensive simulations at Globalfoundries 22nm FDX node. It is worth mentioning, the novel scheme of augmented memory bit-cells can be seamlessly combined with existing in-memory computing approaches for added energy and throughput benefits.
Compute-in-memory (CiM) is a promising approach to improving the computing speed and energy efficiency in dataintensive applications. Beyond existing CiM techniques of bitwise logic-in-memory operations and dot product operations, this paper extends the CiM paradigm with FAST, a new shift-based inmemory computation technique to handle high-concurrency operations on multiple rows in an SRAM. Such high-concurrency operations are widely seen in both conventional applications (e.g. the table update in a database), and emerging applications (e.g. the parallel weight update in neural network acceler…
CIM-Tuner: Balancing the Compute and Storage Capacity of SRAM-CIM Accelerator via Hardware-mapping Co-exploration
School of Integrated Circuits, Southeast University（东南大学集成电路学院）；National Center of Technology Innovation for EDA（EDA国家技术创新中心）；Department of Electronic Engineering, Tsinghua University（清华大学电子工程系）
Sub/Near-threshold static random-access memory (SRAM) design is crucial for addressing the memory bottleneck in energy-constrained applications. However, the high integration density and reliability under process variations demand an accurate estimation of extremely small failure probabilities. To capture such a rare event in memory circuits, the time and storage overhead of conventional Monte Carlo (MC) simulations cannot be tolerated. On the other hand, classic analytical methods predicting failure probabilities from a physical expression become inaccurate in the sub/near-threshold region du…
A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off during standby operation. To further increase the power savings, a write termination circuit is designed which detects completion of MTJ write and closes the bidirectional current path for the MTJ. A reduction of 25.81% in the number of transistors and a reduction of 2.95% in the power consumption is achieved in comparison to prior work on write termination cir…
Computing-in-memory (CiM) is a promising technique to achieve high energy efficiency in data-intensive matrix-vector multiplication (MVM) by relieving the memory bottleneck. Unfortunately, due to the limited SRAM capacity, existing SRAM-based CiM needs to reload the weights from DRAM in large-scale networks. This undesired fact weakens the energy efficiency significantly. This work, for the first time, proposes the concept, design, and optimization of computing-in-ROM to achieve much higher on-chip memory capacity, and thus less DRAM access and lower energy consumption. Furthermore, to support…
Digital In-memory computing improves energy efficiency and throughput of a data-intensive process, which incur memory thrashing and, resulting multiple same memory accesses in a von Neumann architecture. Digital in-memory computing involves accessing multiple SRAM cells simultaneously, which may result in a bit flip when not timed critically. Therefore we discuss the transient voltage characteristics of the bitlines during an SRAM compute. To improve the packaging density and also avoid MOSFET down-scaling issues, we use a 7-nm predictive PDK which uses a finFET node. The finFET process has di…
A 65nm 8b-Activation 8b-Weight SRAM-Based Charge-Domain Computing-in-Memory Macro Using A Fully-Parallel Analog Adder Network and A Single-ADC Interface
Tsinghua University（清华大学）；Institute of Microelectronics of the Chinese Academy of Sciences（中国科学院微电子研究所）；University of Electronic Science and Technology of China（电子科技大学）
In this paper, we propose a 'full-stack' solution to designing high capacity and low latency on-chip cache hierarchies by starting at the circuit level of the hardware design stack. First, we propose a novel Gain Cell (GC) design using FDSOI. The GC has several desirable characteristics, including ~50% higher storage density and ~50% lower dynamic energy as compared to the traditional 6T SRAM, even after accounting for peripheral circuit overheads. We also exploit back-gate bias to increase retention time to 1.12 ms (~60x of eDRAM) which, combined with optimizations like staggered refresh, mak…
Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive applications, and SRAM technology scaling and leakage power limits the efficiency of embedded memories. Future on-chip storage will need higher density and energy efficiency, and the actively expanding field of emerging, embeddable non-volatile memory (eNVM) technologies is providing many potential candidates to satisfy this need. Each technology proposal presents distinct trade-offs in terms of density, read, write, and reliability characteristics, and we present a comprehensive framework for navigating and …
Tvarak efficiently implements system-level redundancy for direct-access (DAX) NVM storage. Production storage systems complement device-level ECC (which covers media errors) with system-checksums and cross-device parity. This system-level redundancy enables detection of and recovery from data corruption due to device firmware bugs (e.g., reading data from the wrong physical location). Direct access to NVM penalizes software-only implementations of system-level redundancy, forcing a choice between lack of data protection or significant performance penalties. Offloading the update and verificati…
In-storage computing with modern solid-state drives (SSDs) enables developers to offload programs from the host to the SSD. It has been proven to be an effective approach to alleviating the I/O bottleneck. To facilitate in-storage computing, many frameworks have been proposed. However, few of them consider security as the priority for in-storage computing. Specifically, since modern SSD controllers do not have a trusted execution environment, an offloaded (malicious) program could steal, modify, and even destroy the data stored in the SSD. In this paper, we first investigate the attacks that c…
In-storage computing with modern solid-state drives (SSDs) enables developers to offload programs from the host to the SSD. It has been proven to be an effective approach to alleviate the I/O bottleneck. To facilitate in-storage computing, many frameworks have been proposed. However, few of them treat the in-storage security as the first citizen. Specifically, since modern SSD controllers do not have a trusted execution environment, an offloaded (malicious) program could steal, modify, and even destroy the data stored in the SSD. In this paper, we first investigate the attacks that could be co…
Compute in-memory (CIM) is a promising technique that minimizes data transport, the primary performance bottleneck and energy cost of most data intensive applications. This has found wide-spread adoption in accelerating neural networks for machine learning applications. Utilizing a crossbar architecture with emerging non-volatile memories (eNVM) such as dense resistive random access memory (RRAM) or phase change random access memory (PCRAM), various forms of neural networks can be implemented to greatly reduce power and increase on chip memory capacity. However, compute in-memory faces its own…
