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arXiv 2108.09382quant-ph
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基于极化激元的量子忆阻器

Polariton-based quantum memristors

Ariel Norambuena, Felipe Torres, Massimiliano Di Ventra, Raúl Coto

摘要:

由同一物理系统进行信息处理和存储正在成为传统计算平台的一种有前途的替代方案。反过来,这需要实现其存储内容可以很容易地调整和控制的基本单元。在这里,我们介绍了一种基于极化激元的量子忆阻器,其中忆阻的性质来自于腔间极化激元交换,并由随时间变化的原子-腔失谐控制。动态滞后的特征在于在瞬时极化激元数的波动,其中的历史信息被编码成一个动态相位。使用Lindblad主方程方法,我们发现量子忆阻器动力学的特征,如磁滞回线的面积和循环,展示了一种由量子态初始化控制的“可塑性”。这使得这种量子忆阻器在广泛的应用中非常通用

英文摘要:

Information processing and storing by the same physical system is emerging as a promising alternative to traditional computing platforms. In turn, this requires the realization of elementary units whose memory content can be easily tuned and controlled. Here, we introduce a polariton-based quantum memristor where the memristive nature arises from the inter-cavity polariton exchange and is controlled by a time-varying atom-cavity detuning. A dynamical hysteresis is characterized by the fluctuations in the instantaneous polariton number, where the history information is encoded into a dynamical phase. Using a Lindblad master equation approach, we find that features of the quantum memristor dynamics, such as the area and circulation of the hysteresis loop, showcase a kind of "plasticity" controlled by quantum state initialization. This makes this quantum memristor very versatile for a wide range of applications

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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