在欧洲XFEL直接照射下，ePix100传感器和ASIC的辐射硬度研究
Radiation Hardness Study of the ePix100 Sensor and ASIC under Direct Illumination at the European XFEL
摘要：
ePix探测器系列提供多种混合像素探测器变体，以支持自由电子激光设施的广泛应用。我们提出了一个系统的研究结果的辐射诱导损伤的影响的性能和寿命的ePix 100 a探测器模块使用直接衰减光束的EuXFEL在9 keV的光子能量和平均功率为10 $μ$ W。用约100 μ m的平均光子通量照射20 × 20像素的区域。7 x $10^{9}$光子/s，在传感器中的Si/SiO $_2$界面的位置处的剂量约为760 $\pm$ 65 kGy。已经观察到ePix 100 a探测器的偏移和噪声的剂量依赖性增加，其来源于传感器漏电流的增加。此外，我们观察到的效果直接照射后，导致饱和的个别像素的暗电流。在照射后一个半小时评估增益的变化，并表明在ASIC水平上也发生损伤。根据所得结果，推导出束流参数的阈值，并根据对数据质量的要求估计了探测器寿命，以满足实验确定的科学标准。我们得出结论，探测器可以承受的能量高达1 $μ$ J的光束在9 keV的光子能量的影响上的面积为1 mm的$^2$。如果入射光子束强度不超过探测器的动态范围至少三个数量级，则探测器可以在几年内使用而不会显著降低其性能。我们的研究结果提供了有价值的输入的ePix 100 a探测器在自由电子激光设施的操作和未来的探测器技术的设计。
英文摘要：
The ePix detector family provides multiple variants of hybrid pixel detectors to support a wide range of applications at free electron laser facilities. We present the results of a systematic study of the influence of radiation induced damage on the performance and lifetime of an ePix100a detector module using a direct attenuated beam of the EuXFEL at 9 keV photon energy and an average power of 10 $μ$W. An area of 20 x 20 pixels was irradiated with an average photon flux of approx. 7 x $10^{9}$ photons/s to a dose of approximately 760$\pm$65 kGy at the location of the Si/SiO$_2$ interfaces in the sensor. A dose dependent increase in both offset and noise of the ePix100a detector have been observed originating from an increase of the sensor leakage current. Moreover, we observed an effect directly after irradiation resulting in the saturation of individual pixels by their dark current. Changes in gain are evaluated one and half hours post irradiation and suggest damage to occur also on the ASIC level. Based on the obtained results, thresholds for beam parameters are deduced and the detector lifetime is estimated with respect to the requirements to the data quality in order to satisfy the scientific standards defined by the experiments. We conclude the detector can withstand a beam with an energy up to 1 $μ$J at a photon energy of 9 keV impacting on an area of 1 mm$^2$. The detector can be used without significant degradation of its performance for several years if the incident photon beam intensities do not exceed the detector's dynamic range by at least three orders of magnitude. Our results provide valuable input for the operation of the ePix100a detector at FEL facilities and for the design of future detector technology.
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