arXiv 2108.057082021-08cond-mat.mes-hallcs.AI

忆阻电荷-通量相互作用仍然可以找到理想的忆阻器

Memristive Charge-Flux Interaction Still Makes It Possible To Find An Ideal Memristor

University of Kent（肯特大学）

Frank Zhigang Wang

备注：: 5 pages, 7 figures

摘要：

在1971年，Chua定义了一个连接电荷q和通量phi的理想忆阻器。在这项工作中，我们证明了物理电荷q和物理通量phi之间的直接相互作用本质上是忆阻的，因为时不变的phi-q曲线是非线性的，连续可微的和严格单调增加的。然而，这种结构仍然受到两个严重的限制：1，寄生电感效应，以及2。连续电阻范围的双稳态和动态扫描。然后讨论了如何制作具有多个或无穷多个稳定态且无寄生电感的理想忆阻器，并给出了一些建议，如开放结构、纳米尺寸、具有立方各向异性（甚至各向同性）的磁性材料以及磁畴的顺序切换。最后，我们回应了最近来自arXiv.org的一个挑战，该挑战声称我们撤回的JAP论文中报告的结构只是一个具有记忆的电感器，因为它没有通过他们设计的电容器-忆阻器电路测试。与他们的猜想相反，理想的忆阻器可能不存在，或者可能是一个纯粹的数学概念，我们仍然乐观地认为，研究人员将在自然界中发现一个理想的忆阻器，或者在实验室中制造一个。

英文摘要：

In 1971, Chua defined an ideal memristor that links charge q and flux phi. In this work, we demonstrated that the direct interaction between physical charge q and physical flux phi is memristive by nature in terms of a time-invariant phi-q curve being nonlinear, continuously differentiable and strictly monotonically increasing. Nevertheless, this structure still suffers from two serious limitations: 1, a parasitic inductor effect, and 2. bistability and dynamic sweep of a continuous resistance range. Then we discussed how to make a fully-functioning ideal memristor with multiple or an infinite number of stable states and no parasitic inductance, and gave a number of suggestions, such as open structure, nanoscale size, magnetic materials with cubic anisotropy (or even isotropy), and sequential switching of the magnetic domains. At last, we responded to a recent challenge from arXiv.org that claims that the structure reported in our retracted JAP paper is simply an inductor with memory since it did not pass their designed capacitor-memristor circuit test. Contrary to their conjecture that an ideal memristor may not exist or may be a purely mathematical concept, we remain optimistic that researchers will discover an ideal memristor in nature or make one in the laboratory.

机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。

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英文摘要：

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