原子级薄的Femtojoule丝状忆阻器
Atomically-thin Femtojoule Filamentary Memristor
摘要：
在忆阻器件中形成的导电细丝的形态和尺寸受到其开关介质层的厚度的强烈影响。该有源层厚度的积极缩放对于减少辅助型忆阻器中的操作电流、电压和能量消耗是至关重要的。以前，由于工艺限制，该细丝层的厚度被限制在几纳米以上，使得进一步抑制通态电流和开关电压具有挑战性。在这里，我们研究了在亚纳米厚度的材料介质中形成导电细丝，该材料介质是通过氧化原子级薄的二维氮化硼形成的。所得到的忆阻器件具有亚pA工作电流和毫微微焦耳每比特能量消耗的亚纳米级瞬时开关。此外，通过将灯丝限制在原子尺度，我们观察到电流开关特性，由于深刻不同的原子动力学，在较厚的介质中是不同的。在这种积极缩放忆阻器件的细丝形态也从理论上探讨。这些超低能量器件有希望实现毫微微焦耳和亚毫微微焦耳电子计算，这对于期望超低功率操作的广泛的电子系统中的应用是有吸引力的。
英文摘要：
The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the operating current, voltage and energy consumption in filamentary type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on-state current and the switching voltage. Here, we study the formation of conductive filaments in a material medium with sub-nanometer thickness, formed through the oxidation of atomically-thin two-dimensional boron nitride. The resulting memristive device exhibits sub-nanometer filamentary switching with sub-pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, we observe current switching characteristics that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. These ultra-low energy devices are promising for realizing femtojoule and sub-femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultra-low power operation.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
