忆阻和非忆阻过零磁滞曲线
Memresistors and non-memristive zero-crossing hysteresis curves
摘要：
电路理论家Leon Chua错误地断言，所有过零的收缩磁滞曲线都定义为忆阻器。HPLabs的斯坦·威廉姆斯（Stan Williams）使用这种说法来断言所有形式的RRAM和相变存储器都是忆阻器。本文演示了几个动态系统的例子，这些动态系统不受忆阻系统的约束，但也产生了与忆阻器指纹相同类型的过零磁滞曲线。这表明过零滞后不足以作为忆阻器的证据。非线性动态系统，忆阻器，相变存储器，RRAM，ReRAM
英文摘要：
It has been erroneously asserted by the circuit theorist Leon Chua that all zero-crossing pinched hysteresis curves define memristors. This claim has been used by Stan Williams of HPLabs to assert that all forms of RRAM and phase change memory are memristors. This paper demonstrates several examples of dynamic systems which fall outside of the constraints of memristive systems and yet also produce the same type of zero-crossing hysteresis curves claimed as a fingerprint for a memristor. This establishes that zero-crossing hysteresis serves as insufficient evidence for a memristor. Keywords- nonlinear dynamic systems, memresistor, phase change memory, RRAM, ReRAM
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
