纳米图案坡莫合金Kagomé阵列的忆阻效应
Memristive effects in nanopatterned permalloy Kagomé array
摘要：
我们研究了Kagomé纳米图案坡莫合金的忆阻效应。我们观察到，在低频率的热敏电阻效应是目前，由于光刻和缺席类似的实验薄膜的现象。然而，我们也表明，通过一个独立的各向异性磁阻研究，一个小的滞后占1%的效果是不归因于热敏效应。这种效应也证实了附近的热滞后之间的仔细减法计划。在毫赫兹制度，提供了一个有效的模型来描述热敏电阻的实验结果，显示应该有一个交叉从毫赫兹到千兆赫兹，从热敏电阻到纳米图案坡莫合金的忆阻效应。
英文摘要：
We study memristive effects in Kagomé nanopatterned permalloy. We observe that at low frequencies a thermistor effect is present, a phenomenon arising due to the lithography and absent in similar experiments for thin films. However, we also show via an independent anisotropic magnetoresistive study that a small hysteresis accounting for 1% of the effect is not attributable to a thermistive effect. Such effect is also confirmed by a careful subtraction scheme between nearby thermal hysteresis. In the millihertz regime, an effective model is provided to describe the experimental results for the thermistor, showing that there should be a crossover from the millihertz to the gigahertz, from a thermistor to an memresistive effect for nanopatterned permalloy.
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