概率忆阻网络：主方程在二进制ReRAM单元网络中的应用
Probabilistic Memristive Networks: Application of a Master Equation to Networks of Binary ReRAM cells
摘要：
近年来，使用非确定性电路元件的可能性已经获得了显著的关注。其电路的建模和仿真需要新的方法，因为现在无法精确预测电路在任意时刻的状态。一般来说，这些电路应该用概率来描述，电路变量应该平均计算，相关函数应该用来探索变量之间的相互关系。在本文中，我们使用，为第一次，主方程来分析网络组成的概率二元忆阻器。解析解的主方程的情况下，相同的忆阻器连接在串联和并联被found. We的分析结果的补充，数值模拟的结果，扩展我们的研究结果超出了相同的忆阻器的情况。本文提出的方法有利于概率/随机电子电路的发展和推进其实际应用。
英文摘要：
The possibility of using non-deterministic circuit components has been gaining significant attention in recent years. The modeling and simulation of their circuits require novel approaches, as now the state of a circuit at an arbitrary moment in time cannot be precisely predicted. Generally, these circuits should be described in terms of probabilities, the circuit variables should be calculated on average, and correlation functions should be used to explore interrelations among the variables. In this paper, we use, for the first time, a master equation to analyze the networks composed of probabilistic binary memristors. Analytical solutions of the master equation for the case of identical memristors connected in-series and in-parallel are found. Our analytical results are supplemented by results of numerical simulations that extend our findings beyond the case of identical memristors. The approach proposed in this paper facilitates the development of probabilistic/stochastic electronic circuits and advance their real-world applications.
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