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arXiv 2108.03031cond-mat.supr-con
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硅的超导电性

Superconductivity in silicon: a review

Monika Moun, Goutam Sheet

摘要:

硅是地球上发现的最丰富的元素之一,多年来一直是半导体行业的绝佳选择。尽管它在现代基于超导体的电子设备中有着显着的应用,但立方硅在超导电子学中的潜力仍然是一个挑战,因为即使是重掺杂的硅晶体在正常条件下也不会超导。很明显,如果能在立方硅中引入超导性,将在低功耗电子电路方面带来突破。受此启发,几个研究小组试图通过许多不同的途径在硅中诱导超导性。然而,已知硅的一些其他结构相如$β$ -Sn和简单的六方晶系显示超导性。在这篇综述文章中,讨论了硅中超导性的各种理论和实验方面。对不同相态和不同结构形式的硅的超导电性也作了评述。我们还强调了硅的超导相在超导纳米电子技术应用中的潜力。

英文摘要:

Silicon, one of the most abundant elements found on Earth, has been an excellent choice of the semiconductor industry for ages. Despite it's remarkable applications in modern semiconductor-based electronic devices, the potential of cubic silicon in superconducting electronics remained a challenge because even heavily doped silicon crystals do not superconduct under normal conditions. It is apparent that if superconductivity can be introduced in cubic silicon, that will bring a breakthrough in low-dissipation electronic circuitry. Motivated by this, attempts have been made by several research groups to induce superconductivity in silicon through a number of different routes. Some of the other structural phases of silicon like $β$-Sn and simple hexagonal are, however, known to display superconductivity. In the present review article, various theoretical and experimental aspects of superconductivity in silicon are discussed. Superconductivity in different phases and different structural forms of silicon are also reviewed. We also highlight the potential of superconducting phases of silicon for technological applications in super-conducting nano-electronics.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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