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arXiv 0810.0056cond-mat.supr-con
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重掺硼碳化硅的超导电性

Superconductivity in heavily boron-doped silicon carbide

M. Kriener, T. Muranaka, J. Kato, Z. A. Ren, J. Akimitsu, Y. Maeno

摘要:

2004年在重掺硼金刚石(C:B)和2006年在硅(Si:B)中发现的超导性重新引起了人们对半导体超导态的兴趣。宽禁带半导体的电荷载流子掺杂导致金属相,在进一步掺杂时可以出现超导性。最近,我们在一个密切相关的系统中发现了超导性:重硼掺杂碳化硅(SiC:B)。用于该研究的样品由立方和六方SiC相组成,因此这导致了它们中哪一个参与超导性的问题。在这里,我们专注于一个样品,主要由六方SiC没有任何迹象的立方修改通过X射线衍射,电阻率和交流磁化率。

英文摘要:

The discoveries of superconductivity in heavily boron-doped diamond (C:B) in 2004 and silicon (Si:B) in 2006 renew the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily-boron doped silicon carbide (SiC:B). The sample used for that study consists of cubic and hexagonal SiC phase fractions and hence this lead to the question which of them participates in the superconductivity. Here we focus on a sample which mainly consists of hexagonal SiC without any indication for the cubic modification by means of x-ray diffraction, resistivity, and ac susceptibility.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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