掺铝超导碳化硅的Specific heat
Specific heat of aluminium-doped superconducting silicon carbide
摘要：
在重掺硼的金刚石、硅和碳化硅中发现的超导电性重新引起了人们对掺杂电荷载流子的宽禁带半导体的基态的兴趣。最近，碳化硅中的铝掺杂成功地产生了金属相，在高铝浓度下，超导性出现。在这里，我们提出了一个比热研究超导铝掺杂碳化硅。我们观察到一个明显的跳跃异常的超导转变温度为1.5 K，表明掺铝碳化硅是一个大块超导体。跳跃异常的分析表明，BCS类声子介导的超导在这个系统中。
英文摘要：
The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide successfully yielded a metallic phase from which at high aluminium concentrations superconductivity emerges. Here, we present a specific-heat study on superconducting aluminium-doped silicon carbide. We observe a clear jump anomaly at the superconducting transition temperature 1.5 K indicating that aluminium-doped silicon carbide is a bulk superconductor. An analysis of the jump anomaly suggests BCS-like phonon-mediated superconductivity in this system.
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