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arXiv 2104.12433quant-phcond-mat.mes-hall
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SiC中过渡金属缺陷电子自旋1/2能级间的超精细跃迁

Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC

Carmem M. Gilardoni, Irina Ion, Freddie Hendriks, Michael Trupke, Caspar H. van der Wal

摘要:

SiC中的过渡金属缺陷引起局部电子状态,其可以在工业成熟的半导体平台中的电信范围内进行光学寻址。这导致了对这些缺陷中心的自旋和光学性质的严格审查。对于自旋-1/2缺陷,缺陷对称性和强自旋-轨道耦合的组合可以限制允许的自旋跃迁,产生寿命长但难以通过微波自旋操纵解决的缺陷自旋。在这里,我们通过分析和数值计算结果表明,一个中心核自旋的存在下,可以导致一个非平凡的电子自旋态的混合,同时保持缺陷对称性。小的外加磁场和超精细耦合之间的相互作用打开了在没有超精细耦合的情况下被禁止的磁微波跃迁,使得能够有效地操纵电子自旋。我们还发现,平行于c轴的微波电场可以用来操纵电子自旋通过调制的偶极超精细项的相对强度。

英文摘要:

Transition metal defects in SiC give rise to localized electronic states that can be optically addressed in the telecom range in an industrially mature semiconductor platform. This has led to intense scrutiny of the spin and optical properties of these defect centers. For spin-1/2 defects, a combination of the defect symmetry and the strong spin-orbit coupling may restrict the allowed spin transitions, giving rise to defect spins that are long lived, but hard to address via microwave spin manipulation. Here, we show via analytical and numerical results that the presence of a central nuclear spin can lead to a non-trivial mixing of electronic spin states, while preserving the defect symmetry. The interplay between a small applied magnetic field and hyperfine coupling opens up magnetic microwave transitions that are forbidden in the absence of hyperfine coupling, enabling efficient manipulation of the electronic spin. We also find that an electric microwave field parallel to the c-axis can be used to manipulate the electronic spin via modulation of the relative strength of the dipolar hyperfine term.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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