发表机构
Ulsan National Institute of Science and Technology (UNIST); ROHM Research & Development Center, ROHM Co., Ltd.（蔚山科学技术院; 罗姆研发中心和罗姆株式会社）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究提出利用远程外延技术构建3C/4H异相界面，以工程调控碳化硅中缺陷-声子相互作用，显著增强零声子跃迁并实现室温窄线宽量子发射体。
AI 中文摘要
宽禁带半导体中的点缺陷在固态平台上提供自旋和光子量子比特，使其成为量子信息处理、通信和传感的重要构建模块。尽管这些系统具有室温运行的强大优势，但固有的电子-声子相互作用会导致宽声子边带发射和弱的零声子线跃迁，限制了高效的自旋-光子接口和可扩展的光子介导相互作用。在此，我们引入一种基于远程外延技术的受控异相界面，作为晶体异质性工程策略。虽然堆垛层错通常被视为需要消除的缺陷，但我们的结果反而表明，晶相界面可以提供额外的自由度，以超越单晶固有性质来工程调控缺陷-声子相互作用。与单相4H-碳化硅（SiC）膜相比，3C/4H异相界面SiC中的Vsi表现出零声子光学跃迁的显著增强，即使在室温下也具有大幅变窄的4.71 meV零声子线宽。这些结果确立了异相界面工程作为定制缺陷-声子相互作用和实现具有增强零声子光学跃迁的明亮室温量子发射体的有效途径。
英文摘要
Point defects in wide-bandgap semiconductors offer spin and photonic qubits in a solid-state platform, making them important building blocks for quantum information processing, communication, and sensing. While these systems have the strong advantage of room-temperature operation, intrinsic electron-phonon interaction induces broad phonon-sideband emission and weak zero-phonon-line transitions, limiting efficient spin-photon interfaces and scalable photon-mediated interaction. Here, we introduce a controlled heterophase interface based on the remote epitaxy technique as a crystal heterogeneity-engineering strategy. While stacking faults are treated as imperfections to be eliminated, our results instead show that crystal-phase interfaces can provide an additional degree of freedom to engineer defect-phonon interaction beyond the intrinsic properties of a single crystal. In comparison with single-phase 4H-silicon carbide (SiC) membranes, Vsi in 3C/4H heterointerface SiC exhibits a drastic enhancement of zero-phonon optical transitions, with a substantially narrower zero-phonon linewidth of 4.71 meV even at room temperature. These results establish heterophase-interface engineering as an effective route for tailoring defect-phonon interactions and realizing bright room-temperature quantum emitters with enhanced zero-phonon optical transitions.
Comments25 pages, 4 figures
