AI 中文总结
本研究通过高场EPR/ENDOR表征6H-SiC中氮/铍中心，明确其自旋特性与电子核相互作用，证实双杂质掺杂可保持晶格结构，为SiC缺陷工程及量子技术应用提供依据。
AI 中文摘要
碳化硅（SiC）的多种结构变体广泛应用于功率半导体电子器件，可在高温、高电压和强辐射等极端条件下工作。具有独特光学和相干特性的自旋缺陷（S>0）的发现，进一步使SiC成为量子技术的有前途平台。本研究采用连续波和脉冲电子顺磁共振（EPR）及电子核双共振（ENDOR），对氮和铍共掺杂（浓度为10¹⁸ cm⁻³）的6H-SiC单晶进行研究。为提高光谱分辨率，实验在W波段（94 GHz；B=3.4 T）开展。脉冲EPR识别出不同晶格位置的氮施主和铍受主，确定了它们的相位相干时间和自旋晶格弛豫时间。ENDOR测量阐明了与局部硅和碳环境的电子核相互作用，包括远配位球。观测到的超精细结构表明超胞内存在高度离域的自旋密度。TRIPLE共振光谱证实了不同配位球因缺陷自旋密度产生的耦合核自旋子空间。这些结果证明，掺入具有不同功能作用的双杂质同时保持晶体结构特征是可行的。
英文摘要
Silicon carbide (SiC) in its various structural modifications is widely used in power semiconductor electronics, operating under extreme conditions of high temperature, high voltage, and intense radiation. The discovery of spin defects (S>0) with unique optical and coherent properties has further positioned SiC as a promising platform for quantum technologies. Here, we investigate a 6H-SiC single crystal co-doped with nitrogen and beryllium at concentrations of 1018 cm-3, using continuous-wave and pulsed electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR). To enhance spectral resolution, experiments were conducted in the W-band (94 GHz; B = 3.4 T). Pulsed EPR identified nitrogen donors and beryllium acceptors in various lattice positions, allowing for the determination of their phase coherence and spin-lattice relaxation times. ENDOR measurements elucidated the electron-nuclear interactions with the local silicon and carbon environment, including distant coordination spheres. The observed hyperfine structures indicated highly delocalized spin density within the supercell. The TRIPLE resonance spectra verify coupled nuclear spin subspaces from different coordination spheres due to defect spin density. These results demonstrate the feasibility of incorporating dual impurities with distinct functional roles while preserving the crystal lattice`s structural features.
Journal refhttps://www.mdpi.com/2079-4991/16/15/921
