arXivDaily arXiv每日学术速递 周一至周五更新
北美退伍军人节(Veterans Day),12 日无更新
arXiv 2104.08421cond-mat.mes-hallcond-mat.mtrl-sci
收藏

完全弛豫扭曲多层石墨烯中本征孤立平带的出现及其拓扑结构

Emergence of intrinsically isolated flat bands and their topology in fully relaxed twisted multi-layer graphene

Xianqing Lin, Haotian Zhu, Jun Ni

摘要:

研究了完全弛豫扭曲多层石墨烯(TMLG)的电子结构和能带拓扑。在TMLG中出现孤立的平坦带,其层数[ $M+N$,其中$M$是底部几层石墨烯(FLG)的层数]高达10,并且具有各种堆叠顺序,并且它们中的大多数位于空穴侧。费米能级附近的FLG的接触带通过FLG的低能带中的电子-空穴不对称性的莫尔耦合和次邻近层之间的垂直跳跃而分裂。完全的结构弛豫导致完全隔离平坦带的全局间隙。对于给定$M$和$N$的TMLG,可分离平坦带的陈数($|C|$)的最高值可达$M+N-1$,并可由某些孤立带承载。$|C|=9$出现在10层的几种构型的孤立的平坦价带中。如此高的$|C|$源于在弱莫尔耦合区中带态简并度的提升或源于由强莫尔耦合引起的拓扑相变。此外,大的轨道磁矩出现在孤立的平坦带与高$|C|$和依赖于TMLG的结构配置。

英文摘要:

We study the electronic structure and band topology of fully relaxed twisted multi-layer graphene (TMLG). Isolated flat bands emerge in TMLG with the number of layers [$M+N$ with $M$ the layer number of the bottom few-layer graphene (FLG)] up to 10 and with various stacking orders, and most of them are on the hole side. The touched bands of FLGs around the Fermi level are split by the moiré coupling through the electron-hole asymmetry in low-energy bands of FLGs and by the vertical hopping between next-nearest layers. The full structural relaxation leads to global gaps that completely isolate a flat band. For TMLG with given $M$ and $N$, the highest magnitude of Chern numbers ($|C|$) of the separable flat bands reaches $M+N-1$ and can be hosted by certain isolated bands. The $|C|=9$ occurs in the isolated flat valence band of several configurations with 10 layers. Such high $|C|$ originates from the lifting of the band-state degeneracy in the weak regime of moiré coupling or from the topological phase transitions induced by the strong moiré coupling. Moreover, large orbital magnetic moments arise in isolated flat bands with high $|C|$ and depend on the structural configurations of TMLG.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑