石墨烯与过渡金属二硫化物扭曲双层中的扭电子学（twistronics）与应变电子学（straintronics）对比
Twistronics versus straintronics in twisted bilayers of graphene and transition metal dichalcogenides
AI总结：
该研究针对石墨烯与过渡金属二硫化物扭曲双层的莫尔带应变效应缺乏解析计算的问题，基于连续模型推导了低能哈密顿量与应变重整化狄拉克速度的解析表达式，揭示了应变调控平带、校正扭转角的作用，并与数值和实验结果进行了验证。
摘要：
多项数值研究表明，石墨烯扭曲双层（TBLG）和过渡金属二硫化物（TMDs）的电子特性可通过堆叠层的应变工程进行调控。具体而言，刚性和弛豫态TBLG的低能莫尔带的平坦度已被证实对应变高度敏感。然而据我们所知，目前尚无关于应变对这类能带影响的完整解析计算。我们基于莫尔平带的连续模型，推导了小扭转角下受应变的石墨烯和TMDs同质扭曲双层的低能哈密顿量。我们得到了应变重整化狄拉克速度的解析表达式，并阐释了应变在平带出现过程中所起的作用。我们讨论了应变如何校正扭转角，使其更接近TBLG的魔角θ_m~1.05°，以及应变如何降低TMD同质扭曲双层在电荷中性点处的最低能带宽度。我们将解析结果与数值研究、实验发现以及我们基于连续模型开展的数值计算结果进行了对比。
英文摘要：
Several numerical studies have shown that the electronic properties of twisted bilayers of graphene (TBLG) and transition metal dichalcogenides (TMDs) are tunable by strain engineering of the stacking layers. In particular, the flatness of the low-energy moiré bands of the rigid and the relaxed TBLG was found to be, substantially, sensitive to the strain. However, to the best of our knowledge, there are no full analytical calculations of the effect of strain on such bands. We derive, based on the continuum model of moiré flat bands, the low-energy Hamiltonian of twisted homobilayers of graphene and TMDs under strain at small twist angles. We obtain the analytical expressions of the strain-renormalized Dirac velocities and explain the role of strain in the emergence of the flat bands. We discuss how strain could correct the twist angles and bring them closer to the magic angle $θ_m\sim1.05^{\circ}$ of TBLG and how it may reduce the widths of the lowest-energy bands at charge neutrality of the twisted homobilayer of TMDs. The analytical results are compared with numerical and experimental findings and also with our numerical calculations based on the continuum model.
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