Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si
Paweł Holewa, Aurimas Sakanas, Uğur Meriç Gür, Paweł Mrowiński, Alexander Huck, Bi-Ying Wang, Anna Musiał, Kresten Yvind, Niels Gregersen, Marcin Syperek, Elizaveta Semenova
Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emitting photons in the telecom bands ($1460-1625$ nm) allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible approach for achieving single-photon emission from InAs/InP QDs heterogeneously integrated with a Si substrate. As a proof of concept, we demonstrate a simple vertical emitting device, employing a metallic mirror beneath the QD emitter, and experimentally obtained photon extraction efficiencies of $\sim10\%$. Nevertheless, the figures of merit of our structures are comparable with values previously only achieved for QDs emitting at shorter wavelength or by applying technically demanding fabrication processes. Our architecture and the simple fabrication procedure allows for the demonstration of a single-photon generation with purity $\mathcal{P}>98\%$ at the liquid helium temperature and $\mathcal{P}=75\%$ at $80$ K.
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks. However, obtaining the necessary low in-plane density of emitters remains a challenge. Such structures are also still less explored than their InAs/GaAs counterparts regarding optical properties of confined carriers. Here, we report on the growth via metal-organic vapor phase epitaxy and investigation of low-density InAs/InP QD-like structures, emitting in the r…
Solid state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O-band (1278-1388 nm), with brightness allowing cavity-free detection in a wafer-scale CMOS-compatible material. In vanadium ensembles, we characterize the complex d1 orbital physics in all five available sites in 4H-SiC and 6H-SiC. The optical transitions are sensitive to mass shifts from lo…
Photo-induced Wavelength-tuning of Telecom-band Quantum Dot Nanowires Embedded in a Phase Change Material
CNRS, ECL, INSA Lyon, UCBL, CPE Lyon, INL, UMR 5270（法国国家科学研究中心，里昂高等师范学校，里昂国立应用科学学院，里昂第一大学，里昂高等化学物理学院，国家科研中心）；CNRS, INSA Lyon, Université Claude Bernard Lyon 1, MATEIS, UMR 5510（法国国家科学研究中心，里昂国立应用科学学院，克洛德·贝尔纳里昂第一大学）；Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, UMR5306（克洛德·贝尔纳里昂第一大学，法国国家科学研究中心，光物质研究所）
Quantum emitters (QEs) in two-dimensional transition metal dichalcogenides (2D TMDCs) have advanced to the forefront of quantum communication and transduction research due to their unique potentials in accessing valley pseudo-spin degree of freedom (DOF) and facile integration into quantum-photonic, electronic and sensing platforms via the layer-by-layer-assembly approach. To date, QEs capable of operating in O-C telecommunication bands have not been demonstrated in TMDCs. Here we report a deterministic creation of such telecom QEs emitting over the 1080 to 1550 nm wavelength range via couplin…
Efficient fiber-based long-distance quantum communication via quantum repeaters relies on deterministic single-photon sources at telecom wavelengths, with the potential to exploit the existing world-wide infrastructures. For upscaling the experimental complexity in quantum networking, two-photon interference (TPI) of remote non-classical emitters in the low-loss telecom bands is of utmost importance. With respect to TPI of distinct emitters, several experiments have been conducted, e.g., using trapped atoms [Beugnon2006], ions [Maunz2007], NV-centers [Bernien2012, Sipahigil2012], SiV-centers […
The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures by metalorganic vapour phase epitaxy, from dome and ring-like structures to double dot in a ring ensembles. Moreover, preliminary microphotoluminescence data are indicating the capped rings system as an interesting candidate for single quantum emitters at telecom wavelengths, potentially becoming a possible alternative to InAs QDs for quantum technology and…
Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters
Hereby, we present results of finite-difference time-domain simulations of technologically undemanding photonic structures offering a significant improvement in the spectrally broad extraction efficiency of emission from a quantum emitter at the third telecommunication window. The modelling is performed for cylindrical and cuboidal mesa structures containing an exciton confined in a single InAs/InP quantum dot. We investigate the emission pattern from such mesas made of InP (which can be exchanged with AlGaInAs lattice-matched to InP) for two cases: monolithic InP material or InP/AlGaInAs dist…
Incoherent pumping in quantum dots (QDs) can create a biexciton state through two paths: via the formation of bright or dark exciton states. The latter, dark-pumping, path is shown to enhance the probability of two-photon simultaneous emission, and hence increase $g^{(2)}(0)$ by a factor $\propto 1/γ_S$, due to the slow spin relaxation rate $γ_S$ in QDs. The existence of the dark path is shown to impose a limitation on the single photon (SP) emission process, especially in nanocavities which exhibit a large exciton-cavity coupling and a Purcell enhancement for fast quantum telecommunications.
We demonstrate full suppression of dephasing tied to deformation potential coupling of confined electrons to longitunidal acoustic (LA) phonons in optical control experiments on large semiconductor quantum dots (QDs) with emission compatible with the low-dispersion telecommunications band at 1.3~$μ$m. By exploiting the sensitivity of the electron-phonon spectral density to the size and shape of the QD, we demonstrate a four-fold reduction in the threshold pulse area required to enter the decoupled regime for exciton inversion using adiabatic rapid passage (ARP). Our calculations of the quantum…
We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined on a silicon substrate. We propose a platform consisting of a hybrid InP/Si waveguide and an InP-embedded InAs quantum dot, emitting at the telecom C-band near 1550 nm. The platform can be fabricated using the existing semiconductor processing technologies. Our numerical studies reveal nearly 86% of the optical field transfer efficiency between geom…
We report on optical investigations of MOVPE-grown InGaAs/GaAs quantum dots emitting at the telecom O-band that were integrated onto uniaxial piezoelectric actuators. This promising technique, which does not degrade the optical quality or performances of the quantum emitters, enables us to tune the quantum dot emission wavelengths and their fine-structure splitting. By spectrally analyzing the emitted light with respect to its polarization, we are able to demonstrate the cancelation of the fine structure splitting within the experimental resolution limit. This work represents an important step…
Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range
Telecom wavelength single-photon emission from quasi-resonantly excited InGaSb/AlGaSb quantum dots
Optoelectronics Research Centre, Physics Unit, Tampere University（坦佩雷大学光电研究中心物理系）；Institute for Advanced Study, Tampere University（坦佩雷大学高级研究院）；VEXLUM Oy（VEXLUM公司）；Institute of Theoretical Physics, Wrocław University of Science and Technology（弗罗茨瓦夫科技大学理论物理研究所）；Department of Experimental Physics, Wrocław University of Science and Technology（弗罗茨瓦夫科技大学实验物理系）
Solid-state quantum emitters with manipulable spin-qubits are promising platforms for quantum communication applications. Although such light-matter interfaces could be realized in many systems only a few allow for light emission in the telecom bands necessary for long-distance quantum networks. Here, we propose and implement a new optically active solid-state spin-qubit based on a hole confined in a single InAs/GaAs quantum dot grown on an InGaAs metamorphic buffer layer emitting photons in the C-band. We lift the hole spin-degeneracy using an external magnetic field and demonstrate hole inje…
The emission cascade of a single quantum dot is a promising source of entangled photons. A prerequisite for this source is the use of a symmetric dot analogous to an atom in a vacuum, but the simultaneous achievement of structural symmetry and emission in a telecom band poses a challenge. Here we report the growth and characterization of highly symmetric InAs/InAlAs quantum dots self-assembled on C3v symmetric InP(111)A. The broad emission spectra cover the O (1.3 micron-m), C (1.55 micron-m), and L (1.6 micron-m) telecom bands. The distribution of the fine-structure splittings is considerably…
Single dot photoluminescence excitation spectroscopy provides an insight into energy structure of individual quantum dots, energy transfer processes within and between the dots and their surroundings. The access to single dot energy structure is vital for further development of telecom-based quantum emitters, like single photon sources or entangled pair of photons. However, application of single dot photoluminescence excitation spectroscopy is limited mainly to dots emitting below 1 $μ$m, while nanostructures optically active in the telecommunication windows of 1.3 and 1.55 $μ$m are of particu…
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reach spontaneous emission in the Si transparent region, which is crucial for applications in Si photonics. Specifically, we achieve room temperature emission at 1.27 $μ$m in the telecommunication O band. The presence of quantum dots in the heterostructure is evidenced by a structural analysis based on s…
We present a design study of quantum light sources based on hybrid circular Bragg Gratings (CBGs) for emission wavelengths in the telecom O-band. The evaluated CBG designs show photon extraction efficiencies > 95% and Purcell factors close to 30. Using simulations based on the finite element method, and considering the influence of possible fabrication imperfections, we identify optimized high-performance CBG designs which are robust against structural aberrations. In particular, full 3D simulations reveal that the designs show robustness regarding deviations of the emitter position in the dev…
Integration of single-photon sources and detectors to silicon-based photonics opens the possibility of complex circuits for quantum information processing. In this work, we demonstrate integration of quantum dots with a silicon photonic add-drop filter for on-chip filtering and routing of telecom single photons. A silicon microdisk resonator acts as a narrow filter that transfers the quantum dot emission and filters the background over a wide wavelength range. Moreover, by tuning the quantum dot emission wavelength over the resonance of the microdisk we can control the transmission of the emit…
Single plasmon transport in one dimensional nanowire
Université Bourgogne Europe, CNRS, Laboratoire Interdisciplinaire Carnot de Bourgogne ICB UMR 6303（勃艮第欧洲大学，法国国家科学研究中心，勃艮第卡诺跨学科实验室）；Université Marie et Louis Pasteur, CNRS, Institut FEMTO-ST UMR 6174（玛丽和路易·巴斯德大学，法国国家科学研究中心，FEMTO-ST研究所）
Deterministically integrating semiconductor quantum emitters with plasmonic nano-devices paves the way towards chip-scale integrable, true nanoscale quantum photonics technologies. For this purpose, stable and bright semiconductor emitters are needed, which moreover allow for CMOS-compatibility and optical activity in the telecommunication band. Here, we demonstrate strongly enhanced light-matter coupling of single near-surface ($<10\,nm$) InAs quantum dots monolithically integrated into electromagnetic hot-spots of sub-wavelength sized metal nanoantennas. The antenna strongly enhances the emi…
We demonstrate an individual single-walled carbon nanotube light emitter integrated onto a microcavity and a waveguide operating in the telecom wavelength regime. Light emission from the carbon nanotube is enhanced at the cavity resonance and is efficiently extracted from the waveguide facet. We have transferred carbon nanotubes to a nanobeam cavity with a dry process, ensuring that an individual carbon nanotube is used. The guided light emission from a chirality-identified single carbon nanotube has a narrow linewidth of less than 1.3 nm and an off-resonance rejection of $\sim$17 dB. The wave…
PbS quantum dots are promising active emitters for use with high-quality Si nanophotonic devices in the telecommunications-band. Measurements of low quantum dot densities are limited both because of low fluorescence levels and the challenges of single photon detection at these wavelengths. Here, we report on methods using a fiber taper waveguide to efficiently extract PbS quantum dot photoluminescence. Temperature dependent ensemble measurements reveal an increase in emitted photons concomitant with an increase in excited-state lifetime from 58.9 ns at 293 K to 657 ns at 40 K. Measurements are…
Single-Wall Carbon Nanotubes (SWNTs) are among the very few candidates for single-photon sources operating in the telecom bands since they exhibit large photon antibunching up to room temperature. However, coupling a nanotube to a photonic structure is highly challenging because of the random location and emission wavelength in the growth process. Here, we demonstrate the realization of a widely tunable single-photon source by using a carbon nanotube inserted in an original repositionable fiber micro-cavity : we fully characterize the emitter in the free-space and subsequently form the cavity …
We propose the use of weakly nonlinear passive materials for prospective applications in integrated quantum photonics. It is shown that strong enhancement of native optical nonlinearities by electromagnetic field confinement in photonic crystal resonators can lead to single-photon generation only exploiting the quantum interference of two coupled modes and the effect of photon blockade under resonant coherent driving. For realistic system parameters in state of the art microcavities, the efficiency of such single-photon source is theoretically characterized by means of the second-order correla…
In the present study, we developed a fabrication process of an electrically driven single-photon LED based on InP QDs emitting in the red spectral range, the wavelength of interest coinciding with the high efficiency window of Si APDs. A deterministic lithography technique allowed for the pre-selection of a suitable QD, here exclusively operated under electrical carrier injection. The final device was characterized under micro-electroluminescence in direct current, as well as in pulsed excitation mode. In particular, under pulsed excitation of one device, single-photon emission of a spectral l…
