发表机构
Wrocław University of Science and Technology; University of Kassel（弗罗茨瓦夫科技大学; 卡塞尔大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究优化InAs/InAlGaAs/InP量子点，增强载流子捕获与限制，抑制热逃逸，实现O波段激光应用。
AI 中文摘要
O波段电信光谱范围结合了最小的色散和低传输损耗，使其非常适合光通信。利用低维有源区（如量子点）的半导体电信激光器具有低阈值功率和高热稳定性。然而，当基态和激发态之间的能量间隔不足时，长波长量子点发射器常常会因热载流子通过激发态逃逸而受损。在这里，我们展示了通过分子束外延在InP上生长的InAs量子点发射器的优化，用于O波段激光有源区。通过优化设计以提高载流子捕获效率，并将发射波长调谐至O波段，我们展示了改善载流子限制的方法。对最终结构的吸收光谱证实了量子点基态和激发态之间存在显著的能量间隔，即使在高温下也能有效抑制热载流子逃逸。这些结果突出了改善长波长量子点激光器中载流子捕获和保留的关键设计。
英文摘要
The O-band telecommunication spectral range combines minimal chromatic dispersion with low transmission loss, making it highly suitable for optical communications. Semiconductor telecom lasers utilizing low-dimensional active regions, such as quantum dots, offer low threshold power and high thermal stability. However, long-wavelength quantum dot emitters often suffer from thermal carrier escape through excited states when the energy separation between the ground and excited states is insufficient. Here we demonstrate the optimization of InAs quantum dot emitters grown on InP by molecular-beam epitaxy for O-band laser active regions. By optimizing the design for better carrier capture efficiency and tuning the emission wavelength to the O-band, we show ways of improving the carrier confinement. Absorption spectroscopy on the finalized structure confirms substantial energy separation between the quantum dot ground and excited states, effectively suppressing thermal carrier escape even at elevated temperatures. These results highlight critical design for improving carrier capture and retention in long-wavelength quantum dot lasers.
Comments10 pages, 9 figures
