分子束外延中熟化过程形成的对称InAs/InGaAlAs/InP量子点的光学和电子性质：宽范围单光子电信发射器的有前景系统
Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters
AI总结：
本研究通过实验和理论，展示了分子束外延熟化法生长的对称InAs/InGaAlAs/InP量子点具有宽谱发射和长寿命，是宽范围单光子电信发射器的理想系统。
摘要：
我们通过理论建模支持，对在分子束外延中使用熟化步骤生长的、嵌入与InP(001)晶格匹配的InAlGaAs势垒中的InAs量子点（QDs）进行了详细的实验光学研究。该方法导致生长出低表面密度的面内对称量子点，其特征是多峰尺寸分布，导致在$1.4-2.0$ $\mu$m范围内光谱宽发射，这对许多近红外光子应用至关重要。我们发现，与InAs/InP系统相反，这里的多峰分布源于连续点族之间量子点高度差为两个单层。这可能源于四元势垒合金中的长程有序，稳定了量子点成核。通过测量光谱宽发射的光致发光（PL）寿命，我们发现几乎无色散的值为$1.3\pm0.3$ ns。最后，我们检查了发射特性的温度依赖性。我们强调了浸润层中局域态在热载流子再分布过程中充当载流子库的作用。我们确定空穴逃逸到InAlGaAs势垒是这些量子点中PL猝灭的主要机制。
英文摘要：
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal size distribution resulting in a spectrally broad emission in the range of $1.4-2.0$ $μ$m, essential for many near-infrared photonic applications. We find that, in contrast to the InAs/InP system, the multimodal distribution results here from a two-monolayer difference in QD height between consecutive families of dots. This may stem from the long-range ordering in the quaternary barrier alloy that stabilizes QD nucleation. Measuring the photoluminescence (PL) lifetime of the spectrally broad emission, we find a nearly dispersionless value of $1.3\pm0.3$ ns. Finally, we examine the temperature dependence of emission characteristics. We underline the impact of localized states in the wetting layer playing the role of carrier reservoir during thermal carrier redistribution. We determine the hole escape to the InAlGaAs barrier to be a primary PL quenching mechanism in these QDs.
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