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arXiv 2104.07568physics.opticscond-mat.mtrl-sci
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Ce掺杂(La,Y)$_2$ Si $_2$ O $_7$单晶的生长及光学性质

Crystal growth and optical properties of Ce-doped (La,Y)$_2$Si$_2$O$_7$ single crystal

Takahiko Horiai, Juraj Paterek, Jan Pejchal, Marketa Jarosova, Jan Rohlicek, Shunsuke Kurosawa, Takashi Hanada, Masao Yoshino, Akihiro Yamaji, Satoshi Toyoda, H… 展开作者

Takahiko Horiai, Juraj Paterek, Jan Pejchal, Marketa Jarosova, Jan Rohlicek, Shunsuke Kurosawa, Takashi Hanada, Masao Yoshino, Akihiro Yamaji, Satoshi Toyoda, Hiroki Sato, Yuji Ohashi, Kei Kamada, Yuui Yokota, Akira Yoshikawa, Martin Nikl

摘要:

采用微提拉法生长了掺Ce(La,Y)$_2$ Si $_2$ O $_7$单晶,并研究了其光学和闪烁性能。我们成功地制备了(Ce $_{0.015}$ La $_{0.600}$ Y $_{0.385}$)$_2$ Si $_2$ O $_7$的单晶。所观察到的热淬火过程的特征在于淬火温度(T50%)为526 K,其激活能被确定为0.62 eV。进一步考虑热猝灭因素,发现热猝灭至少是由热电离引起的,也可能是经典的热猝灭。光输出和闪烁衰减时间分别为~ 12,000光子/MeV和~42 ns。这些结果表明,(Ce $_{0.015}$ La $_{0.600}$ Y $_{0.385}$)$_2$ Si $_2$ O $_7$在闪烁材料中具有很大的应用潜力。

英文摘要:

We have grown Ce-doped (La,Y)$_2$Si$_2$O$_7$ single crystal by micro-pulling-down method and investigated its optical and scintillation properties. We have successfully prepared the single crystal with (Ce$_{0.015}$La$_{0.600}$Y$_{0.385}$)$_2$Si$_2$O$_7$ composition. The observed thermal quenching process could be characterized by the quenching temperature (T50%) of 526 K and its activation energy was determined to be 0.62 eV. Further considering the thermal quenching factors, it was found that the thermal quenching was caused by at least the thermal ionization and maybe also by classical thermal quenching. The light output and scintillation decay time were evaluated to be ~12,000 photons/MeV and ~42 ns, respectively. These results indicate that (Ce$_{0.015}$La$_{0.600}$Y$_{0.385}$)$_2$Si$_2$O$_7$ has a great potential for application in scintillation materials.

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