AI 中文总结
研究在广义色散框架内对本征和锌掺杂砷化镓进行温度相关红外研究，用特定分布拟合多组数据，再现耦合演变，观察到法诺型不对称，所得光学常数具一致性，为模拟红外光学性质提供定量工具。
AI 中文摘要
我们在描述耦合声子和自由载流子激发的广义色散框架内，对本征和锌掺杂的砷化镓进行了温度相关的红外研究。同时使用单声子模式的高斯展宽分布和多声子吸收带的三角形 - 德尔塔 - 三角形表示，对从300到440K测量的反射率、透射率和椭偏数据进行拟合。该形式体系对晶格和载流子对介电响应的贡献提供了自洽描述，再现了声子 - 等离子体耦合随掺杂和温度的演变。在重掺杂样品中，观察到TO声子共振明显的法诺型不对称性，归因于声子激发与轻、重空穴的德鲁德背景之间的干涉。所得光学常数在远红外和中红外范围内保持物理一致性，证明了该框架对掺杂半导体中耦合束缚和自由激发的适用性。该方法为模拟砷化镓及相关光子材料的红外光学性质提供了定量工具。
英文摘要
We present a temperature-dependent infrared study of intrinsic and Zn-doped GaAs within a generalized dispersion framework describing coupled phonon and free-carrier excitations. Reflectance, transmittance, and ellipsometric data measured from 300 to 440 K are fitted simultaneously using Gaussian-broadened distributions for single-phonon modes and triangle-delta-triangle representations for multiphonon absorption bands. The formalism provides a self-consistent description of lattice and carrier contributions to the dielectric response and reproduces the evolution of phonon-plasmon coupling with doping and temperature. In heavily doped samples, a pronounced Fano-type asymmetry of the TO-phonon resonance is observed and attributed to interference between phonon excitations and the Drude background of light and heavy holes. The resulting optical constants remain physically consistent across the far- and mid-infrared range and demonstrate the applicability of the framework to coupled bound and free excitations in doped semiconductors. The approach provides a quantitative tool for modeling infrared optical properties of GaAs and related photonic materials.
Journal refJournal of Applied Physics 139, 175704 (2026)
