室温下Ga掺杂晶体中长寿命电子自旋相干性
Long-lived electron spin coherence in Ga-doped crystals at room temperature
摘要：
利用时间分辨法拉第旋转谱和克尔旋转谱研究了Ga掺杂ZnO单晶中的电子自旋动力学。发现了具有两个退相过程的长寿命自旋相干，其特征时间在室温下可达5.2 ns。通过测量激光波长和温度的关系，将室温长寿命自旋信号归因于局域电子。自旋退相（弛豫）过程与横向（纵向）磁场无关，表明自旋退相不是由g因子不均匀性和电子-核超精细相互作用引起的。结果表明，这两个自旋退相过程都是由两种局域电子引起的，它们都是由相邻局域电子之间的各向异性交换Dzyaloshinskiii-Moriya相互作用所支配的.
英文摘要：
Electron spin dynamics are studied in Ga-doped ZnO single crystals by time-resolved Faraday and Kerr rotation spectroscopies. Long-lived spin coherence with two dephasing processes is discovered where the characteristic time is up to 5.2 ns at room temperature. Through the dependence measurements of laser wavelength and temperature, the room-temperature long-lived spin signal is attributed to localized electrons. The spin dephasing (relaxation) processes are independent of transverse (longitudinal) magnetic fields, indicating the spin dephasing not resulting from the g-factor inhomogeneity and electron-nuclear hyperfine interaction. It reveals that the two spin dephasing processes originate from two types of localized electrons, both of which are dominated by the anisotropic exchange Dzyaloshinskii-Moriya interaction between adjacent localized electrons.
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