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arXiv 2012.11680physics.ins-detcond-mat.supr-conphysics.acc-ph
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先进光子源下硬X射线跃迁边缘传感器集成电路束线谱

Beamline Spectroscopy of Integrated Circuits With Hard X-ray Transition Edge Sensors at the Advanced Photon Source

T. Guruswamy, L. Gades, A. Miceli, U. Patel, O. Quaranta

摘要:

在阿贡国家实验室,我们正在开发硬X射线(2至20千电子伏)过渡边缘传感器(TES)阵列的光束线科学。与基于超导体的能量色散探测器相比,超导探测器提供的显著提高的能量分辨率,但具有比波长色散仪器更好的收集效率,这将使X射线发射和吸收光谱测量得到极大改善。具有24个微波频率复用像素的原型仪器目前正在高级光子源(APS)1-BM光束线上进行测试。初始测量显示能量分辨率比APS光束线用户目前可用的硅漂移探测器好十倍(150 eV与< 15 eV相比),特别是证明了在包含多种过渡金属元素的样品(如集成电路)中分辨密集发射线的能力。比较荧光光谱的集成电路测量与我们的TES在光束线与硅探测器的测量,我们发现发射线和元素很大程度上隐藏(如铪旁边的铜)从基于半导体的检测器,但很好地解决了TES。这直接显示了基于TES的仪器在荧光绘图方面的优势。

英文摘要:

At Argonne National Laboratory, we are developing hard X-ray (2 to 20 keV) Transition Edge Sensor (TES) arrays for beamline science. The significantly improved energy resolution provided by superconducting detectors compared to semiconductor-based energy-dispersive detectors, but with better collection efficiency than wavelength-dispersive instruments, will enable greatly improved X-ray emission and absorption spectroscopic measurements. A prototype instrument with 24 microwave-frequency multiplexed pixels is now in testing at the Advanced Photon Source (APS) 1-BM beamline. Initial measurements show an energy resolution ten times better (150 eV compared to < 15 eV) than the silicon-drift detectors currently available to APS beamline users, and in particular demonstrate the ability to resolve closely-spaced emission lines in samples containing multiple transition metal elements, such as integrated circuits. Comparing fluorescence spectra of integrated circuits measured with our TESs at the beamline to those measured with silicon detectors, we find emission lines and elements largely hidden (e.g. Hf alongside Cu) from a semiconductor-based detector but well resolved by a TES. This directly shows the strengths of TES-based instruments in fluorescence mapping.

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