We present an ab initio relativistic k.p theory of the effect of magnetic exchange field on the band structure in the gap region of bulk crystals and thin films of three-dimensional layered topological insulators. For the field perpendicular to the layers (along $z$), we reveal novel unconventional scenarios of the response of the band-gap edges to the magnetization. The modification of the valence and conduction states is considered in terms of their $Γ$-point spin $s^z$ and total angular momentum $J^z$ on the atomic sites where the states are localized. The actual scenario depends on whether $s^z$ and $J^z$ have the same or opposite sign. In particular, the opposite sign for the valence state and the same sign for the conduction state give rise to an unconventional response in Bi$_2$Te$_3$ -- both in the bulk crystal and in ultra-thin films, which fundamentally distinguishes this topological insulator from Bi$_2$Se$_3$, where both states have the same sign. To gain a deeper insight into different scenarios in insulators with both inverted and non-inverted zero-field band structure, a minimal four-band third-order k.p model is constructed from first principles. Within this model, we analyze the field-induced band structure of the insulators and identify Weyl nodes that appear in a magnetic phase and behave differently depending on the scenario. We characterize the topology of the modified band structure by the Chern number $\mathcal{C}$ and find the unconventional response to be accompanied by a large Chern number $\mathcal{C}=\pm3$.
We study indirect exchange interaction between magnetic impurities in the (001) CdTe/HgTe/CdTe symmetric quantum well. We consider low temperatures and the case of the chemical potential placed in the energy gap of the 2D quasiparticle spectrum. We find that the indirect exchange interaction is suppressed exponentially with the distance between magnetic impurities. The presence of inversion asymmetry results in oscillations of the indirect exchange interaction with the distance and generates additional terms which are non-invariant under rotations in the (001) plane. The indirect exchange inte…
We show that higher-harmonics exchange scattering from a magnetic adatom on the surface of a three dimensional topological insulator leads to a magnetic anisotropy whose magnitude and sign may be tuned by adjusting the chemical potential of the helical surface band. As chemical potential moves from the Dirac point towards the surface band edge, the surface normal is found to change from magnetic easy, to hard axis. Hexagonal warping is shown to diminish the region with easy axis anisotropy, and to suppress the anisotropy altogether. This indirect contribution can be comparable in magnitude to …
We calculate an AC response of the edge states of a two-dimensional topological insulator, which can exchange electrons with a conducting puddle in the bulk of the insulator. This exchange leads to finite corrections to the response of isolated edge states both at low and high frequencies. By comparing these corrections, one may determine the parameters of the puddle.
At the interface between a nonmagnetic metal (NM) and a ferromagnetic insulator (FI) spin current can interact with the magnetization, leading to a modulation of the spin current. The interfacial exchange field at these FI-NM interfaces can be probed by placing the interface in contact with the spin transport channel of a lateral spin valve (LSV) device and observing additional spin relaxation processes. We study interfacial exchange field in lateral spin valve devices where Cu spin transport channel is in proximity with ferromagnetic insulator EuS (EuS-LSV) and yttrium iron garnet Y$_3$Fe$_5$…
Appearance of flat surface bands in three-dimensional topological insulators in a ferromagnetic exchange field
研究了铁磁交换场作用下三维拓扑绝缘体表面态的性质。我们表明，对于层状材料，如Bi $_2$ Se $_3$的顶面上的表面状态的行为定性不同于在侧表面的表面状态。我们发现，表面态的群速度可以通过交换场的方向和强度来调节。如果交换场变得大于材料的体隙，则发生到拓扑非平凡半金属态的相变。特别地，如果交换场具有垂直于层的非零分量，则材料变成外尔半金属。与外尔半金属态，我们表明，费米弧出现在表面。在某些情况下，可以出现一维甚至二维的表面平坦带。我们发现这些平坦带的出现与系统的手征对称性有关，并且可以用拓扑缠绕数来理解。与以前的系统相比，已经建议拥有表面平坦带，本系统具有更大的能量尺度，允许在室温下观察表面平坦带。平带是可调谐的，因为它们可以通过铁磁交换场的旋转来打开或关闭。我们的研究结果支持的有限系统的数值结果以及近似的分析结果。
Spin-dependent transport at heavy metal/magnetic insulator interfaces is at the origin of many phenomena at the forefront of spintronics research. A proper quantification of the different interfacial spin conductances is crucial for many applications. Here, we report the first measurement of the spin Hall magnetoresistance (SMR) of Pt on a purely ferromagnetic insulator (EuS). We perform SMR measurements in a wide range of temperatures and fit the results by using a microscopic model. From this fitting procedure we obtain the temperature dependence of the spin conductances ($G_s$, $G_r$ and $G…
Magnetic exchange driven proximity effect at a magnetic insulator / topological insulator (MI/TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI / magnetic-TI EuS / Sb$_{2-x}$V$_x$Te$_3$ hybrid heterostructure, where V doping is used to drive the TI (Sb$_{2}$Te$_3$) magnetic. We observe an artificial antiferromagnetic-like structure near the MI/TI interface, which may account for the enhanced proximity coupling. The interplay between the p…
Topological insulators are bulk insulators with exotic surface states, protected under time-reversal symmetry, that hold promise in observing many exciting condensed-matter phenomena. In this report, we show that by having a topological insulator (Bi$_2$Se$_3$) in proximity to a magnetic insulator (EuS), a metal-to-insulator transition in the surface state, attributed to opening of an exchange gap, can be observed whose properties are tunable using bottom gate voltage and external magnetic field. Our study provides evidence of gate-controlled enhanced interface magnetism with the signature of …
The indirect exchange interaction between magnetic impurities located in the bulk of a two-dimensional topological insulator decays exponentially with the distance. The indirect exchange interaction for magnetic impurities mediated by the helical states at the edge of the topological insulator demonstrates behaviour which is typical for the Ruderman-Kittel-Kasuya-Yosida interaction in a one-dimensional metal. We have shown that interference between the bulk and edge states in the two-dimensional topological insulator results in existence of the unusual contribution to the indirect exchange int…
We investigate the spin-pumping-induced electric current on the surface of a three-dimensional topological insulator hybridized with a ferromagnet, namely, ferromagnetic topological insulator. In order to do this, we establish the microscopic formalism and construct the perturbation theory using a Keldysh Green's function approach. We analyze how this electric current is generated by an exchange interaction and an external ac magnetic field, which is the driving force of ferromagnetic resonance as well as the spin pumping. The mechanism is as follows. First, the ferromagnetic resonance is driv…
The Dirac electrons occupying the surface states (SSs) of topological insulators (TIs) have been predicted to exhibit many exciting magneto-transport phenomena. Here we report on the first experimental observation of an unconventional planar Hall effect (PHE) and an electrically gate-tunable hysteretic planar magnetoresistance (PMR) in EuS/TI heterostructures, in which EuS is a ferromagnetic insulator (FMI) with an in-plane magnetization. In such exchange-coupled FMI/TI heterostructures, we find a significant (suppressed) PHE when the in-plane magnetic field is parallel (perpendicular) to the …
The quantum anomalous Hall effect has been theoretically predicted and experimentally verified in magnetic topological insulators. In addition, the surface states of these materials exhibit a hedgehog-like "spin" texture in momentum space. Here, we apply the previously formulated low-energy model for Bi$_2$Se$_3$, a parent compound for magnetic topological insulators, to a slab geometry in which an exchange field acts only within one of the surface layers. In this sample set up, the hedgehog transforms into a skyrmion texture beyond a critical exchange field. This critical field marks a transi…
We study thermoelectric transport in ultrathin topological insulators under the application of circularly polarized off-resonant light of frequency Ω and amplitude A. We derive analytical expressions for the band structure, orbital magnetization Morb, and the thermal (\k{appa}xy) and Nernst (αxy) conductivities. Reversing the light polarization from right to left leads to an exchange of the conduction and valence bands of the symmetric and antisymmetric surface states and to a sign change in Morb,αxy, and \k{appa}xy. Varying the sample thickness or A/Ω leads to a strong enhancement of Morb and…
We theoretically investigate the exchange interaction between magnetic impurities in ultrathin Bi$_2$Se$_3$ topological insulator films by taking into account the low-energy states produced by the impurities. We find that the locally induced impurity resonances strongly influence the exchange interaction between magnetic moments. In particular, we find a non-collinear alignment being more favorable than the collinear ferromagnetic alignment preferred when impurity states are ignored and only the pristine topological insulator band structure is considered. Moreover, we show that by applying of …
We generalize the topological phase diagram of magnetic topological insulator (TI) thin films in an extended parameter space comprising out-of-plane (OP) and in-plane (IP) exchange fields in the presence of structural inversion asymmetry (SIA) while taking a generic orbital-dependent spin coupling allowed for TIs into consideration. The results show that an IP field substantially deforms phase boundaries and generically induces the quantum anomalous Hall (QAH) effect. For symmetric spin coupling, extremely weak OP and IP exchange fields create the QAH state by tuning SIA with a gate bias. For …
Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices
The Pennsylvania State University（宾夕法尼亚州立大学）；Nanjing University（南京大学）；Nankai University（南开大学）；National Institute for Materials Science（国立材料研究所）；Oak Ridge National Laboratory（橡树岭国家实验室）；University of California, Riverside（加州大学河滨分校）
We investigate the dynamical control of the heat flux exchanged in near-field regime between a membrane made with a phase-change material and a substrate when the temperature of the membrane is tuned around its critical value. We show that in interaction with an external source of thermal radiation, this system is multistable and behaves as a thermal transistor, being able to dynamically modulate and even amplify super-Planckian heat fluxes. This behavior could be used to dynamically control heat fluxes exchanged at the nanoscale in systems out of thermal equilibrium and to process thermal inf…
We theoretically investigate the localization mechanism of quantum anomalous Hall Effect (QAHE) with large Chern numbers $\mathcal{C}$ in bilayer graphene and magnetic topological insulator thin films, by applying either nonmagnetic or spin-flip (magnetic) disorders. We show that, in the presence of nonmagnetic disorders, the QAHEs in both two systems become Anderson insulating as expected when the disorder strength is large enough. However, in the presence of spin-flip disorders, the localization mechanisms in these two host materials are completely distinct. For the ferromagnetic bilayer gra…
We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of ferromagnetic insulator Cr2Ge2Te6 and topological insulator (Bi,Sb)2Te3. Despite small magnetization in the (Bi,Sb)2Te3 layer, the anomalous Hall conductivity reaches a large value of 0.2e2/h in accord with a ferromagnetic response of the Cr2Ge2Te6. The results show that the exchange coupling between the surface state of the topological insulator and the proximitized Cr2Ge2Te6 layer is effective and strong enough to open the sizable exchange gap in the surface state.
Topological insulator (TI) thin films with surface magnetism are expected to exhibit a quantized anomalous Hall effect (QAHE) when the magnetizations on the top and bottom surfaces are parallel, and a quantized topological magnetoelectric (QTME) response when the magnetizations have opposing orientations (axion insulator phase) and the films are sufficiently thick. We present a unified picture of both effects that associates deviations from exact quantization of the QTME caused by finite thickness with non-locality in the side-wall current response function. Using realistic tight-binding model…
We theoretically investigate the RKKY exchange coupling between two ferromagnets (FM) separated by a thin topological insulator film (TI). We find an unusual dependence of the RKKY exchange coupling on the TI thickness ($t_{TI}$). First, when $t_{TI}$ decreases, the coupling amplitude increases at first and reaches its maximum value at some critical thickness, below which the amplitude turns to diminish. This trend is attributed to the hybridization between surfaces of the TI film, which opens a gap below critical thickness and thus turns the surfaces into insulating state from semi-metal stat…
Using the Green functions method we study transport properties of surface electrons in topological insulators in the presence of a correlated random exchange field. Such an exchange field may be due to random magnetization with correlated fluctuations. We determine the relaxation time due to scattering from the magnetization fluctuations and from other structural defects. Then we calculate the longitudinal charge conductivity taking into account the contribution due to vertex correction.
Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration…
We report on nonlocal spin transport in mesoscopic superconducting aluminum wires in contact with the ferromagnetic insulator europium sulfide. We find spin injection and long-range spin transport in the regime of the exchange splitting induced by europium sulfide. Our results demonstrate that spin transport in superconductors can be manipulated by ferromagnetic insulators, and opens a new path to control spin currents in superconductors.
We theoretically investigate the energy relaxation rate of magnons and phonons near the resonance points to clarify the underlying mechanism of heat transport in ferromagnetic materials. We find that the simple two-temperature model is valid for the one-phonon/one-magnon process, as the rate of energy exchange between magnons and phonons is proportional to the temperature difference between them, and it is independent of temperature in the high temperature limit. We found that the magnon-phonon relaxation time due to the one-phonon/one-magnon interaction could be reduced to 1.48 $μs$ at the re…
A superconductor can interact with magnets through the magnetic field which is induced by the supercurrent. However, this interaction is rather weak and requires relatively large magnets to reach a sizable hybridization of microwave electromagnetic modes with magnons. The size of the device can be drastically reduced by means of the large interfacial exchange interaction between spins in a magnet and a superconductor. In the spin-orbit coupled superconductor this interaction can be transmitted to the s-wave condensate through a mixing of triplet and singlet Cooper pairs. In this paper we theor…
We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, Bi2Se3. The ferromagnetic layer has perpendicular anisotropy, due to MgO deposited on the top surface of Fe. When current is passed on the surface of Bi2Se3, the surface of the Bi2Se3 becomes spin polarized and strong exchange interaction occurs between the d electrons in the ferromagnet and the electrons conducting the current on the surface of the Bi2Se3. Part of the current is shunted through the ferromagnet which generates spin transfer torque in the ferromagnet.…
Here we propose another type of ferromagnetic semiconductors: ferromagnetic negative charge-transfer insulator (FNCTI). In FNCTI, the negative charge-transfer states strongly enhance the ferromagnetic (FM) exchange interactions and the orbital hybridization gap permits the magnetic molecular orbitals as the underlying magnetic units rather than local atomic orbitals. Thus the FM exchange interactions are rather strong and decay slowly due to the large spearding of magnetic molecular orbitals. This is distinct from the superexchange mechanism where FM exchange interactions are quite weak as sum…
Where chiral modes should appear is an essential question for the quantum anomalous Hall (QAH) effect in three-dimensional topological insulators (3DTIs). In this Letter, we show that in a slab of ferromagnetic 3DTI subjected to a uniform exchange field normal to its top and bottom surfaces, the QAH effect creates a single chiral surface mode delocalized on the side faces. In a nonmagnetic 3DTI, analogously, delocalized helical modes consisting of a pair of oppositely propagating chiral surface modes are produced by the quantum spin Hall effect.
In magnetic topological insulators, quantized electronic transport is interwined with spontaneous magnetic ordering, as magnetization controls band gaps, hence band topology, through the exchange interaction. We show that considering the exchange gaps at the mean-field level is inadequate to predict phase transitions between electronic states of distinct topology. Thermal spin fluctuations disturbing the magnetization can act as frozen disorders that strongly scatter electrons, reducing the onset temperature of quantized transport appreciably even in the absence of structural impurities. This …
We calculate the resistance and shot noise in the edge states of a 2D topological insulator that result from the exchange of electrons between these states and conducting puddles in the bulk of the insulator. The two limiting cases where the energy relaxation is either absent or very strong are considered. A finite time of spin relaxation in the puddles is introduced phenomenologically. Depending on this time and on the strength of coupling between the edge states and the puddles, the Fano factor $F=S_I/2eI$ ranges from 0 to 1/3, which is in an agreement with the available experimental data.
Introducing magnetism into topological insulators breaks time-reversal symmetry, and the magnetic exchange interaction can open a gap in the otherwise gapless topological surface states. This allows various novel topological quantum states to be generated, including the quantum anomalous Hall effect (QAHE) and axion insulator states. Magnetic doping and magnetic proximity are viewed as being useful means of exploring the interaction between topology and magnetism. However, the inhomogeneity of magnetic doping leads to complicated magnetic ordering and small exchange gaps, and consequently the …
Light enables ultrafast, direct and nonthermal control of the exchange and Dzyaloshinskii-Moriya interactions. We consider two-dimensional honeycomb lattices described by the Kane-Mele-Hubbard model at half filling and in the strongly correlated limit, i.e., the Mott insulator phase of a canted antiferromagnet. Based on Floquet theory, we demonstrate that by changing the amplitude and frequency of polarized laser pulses, one can tune the amplitudes and signs of and even the ratio between the exchange and Dzyaloshinskii-Moriya spin interactions. Furthermore, the renormalizations of the spin int…
We present multi-scale dynamical simulations of voltage-induced insulator-to-metal transition in the double exchange model, a canonical example of itinerant magnet and correlated electron systems. By combining nonequilibrium Green's function method with large-scale Landau-Lifshitz-Gilbert dynamics, we show that the transition from an antiferromagnetic insulator to the low-resistance state is initiated by the nucleation of a thin ferromagnetic conducting layer at the anode. The metal-insulator interface separating the two phases is then driven toward the opposite electrode by the voltage stress…
