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arXiv 2404.02430cond-mat.mes-hallcond-mat.mtrl-sci
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量子反常霍尔绝缘体中层间交换耦合诱导的临界金属-绝缘体相变

Interlayer Exchange Coupling-Induced Critical-Metal-to-Insulator Phase Transition in Quantum Anomalous Hall Insulators

Ruoxi Zhang, Yi-Fan Zhao, Ling-Jie Zhou, Deyi Zhuo, Zi-Jie Yan, Chao-Xing Liu, Moses H. W. Chan, Chui-Zhen Chen, Cui-Zu Chang

AI总结:

本研究通过合成不同间隔层厚度的磁性拓扑绝缘体三明治结构,发现层间交换耦合可调控量子反常霍尔效应的临界行为,在平台相变附近诱导出二维临界金属到三维绝缘体的转变,并通过含随机磁畴的哈密顿量解释了该现象。

摘要:

由非磁性间隔层夹在中间的两个磁性层之间的层间交换耦合(IEC)对决定此类异质结构的磁学性质起着关键作用。量子反常霍尔(QAH)效应已在由未掺杂拓扑绝缘体(TI)层隔开的两个磁性掺杂拓扑绝缘体层构成的结构中实现。本研究中,我们利用分子束外延合成了一系列中间TI间隔层厚度不同的磁性TI三明治结构。所有样品中均观测到了良好量子化的QAH效应,且IEC调控了顶部与底部磁性TI层之间的临界行为。在平台相变(PPT)附近,较薄的QAH样品表现出二维临界金属行为,其纵向电阻几乎不随温度变化。相比之下,较厚的QAH样品表现为三维绝缘体,其纵向电阻在更高温度下降低。我们采用带有随机磁畴的磁性TI哈密顿量,来理解在QAH PPT附近观测到的IEC诱导的临界金属-绝缘体相变。

英文摘要:

Interlayer exchange coupling (IEC) between two magnetic layers sandwiched by a nonmagnetic spacer layer plays a critical role in shaping the magnetic properties of such heterostructures. The quantum anomalous Hall (QAH) effect has been realized in a structure composed of two magnetically doped topological insulator (TI) layers separated by an undoped TI layer. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI sandwiches with varying thicknesses of the middle TI spacer layer. The well-quantized QAH effect is observed in all these samples, and the IEC modulates its critical behavior between the top and bottom magnetic TI layers. Near the plateau phase transition (PPT), thinner QAH samples exhibit a two-dimensional critical metal behavior with nearly temperature-independent longitudinal resistance. In contrast, thicker QAH samples behave as a three-dimensional insulator with reduced longitudinal resistance at higher temperatures. We employ a magnetic TI Hamiltonian with random magnetic domains to understand the IEC-induced critical-metal-to-insulator transition observed near QAH PPT.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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