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arXiv 1303.5801cond-mat.mes-hall
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将MBE材料与石墨烯集成以诱导新的基于自旋的现象

Integrating MBE materials with graphene to induce novel spin-based phenomena

Adrian G. Swartz, Kathleen M. McCreary, Wei Han, Jared J. I. Wong, Patrick M. Odenthal, Hua Wen, Jen-Ru Chen, Yufeng Hao, Rodney S. Ruoff, Jaroslav Fabian, Roland K. Kawakami

摘要:

石墨烯中的磁性是一个新兴的领域,受到了理论上的广泛关注。特别是,已经有了令人兴奋的预测感应磁性通过接近铁磁绝缘体,以及通过本地化的掺杂剂和缺陷。在这里,我们讨论了我们的实验工作,使用分子束外延(MBE)改性石墨烯的表面,并诱导新的自旋相关现象。首先,我们研究了外延生长的铁磁绝缘体EuO的石墨烯和讨论可能的方案,实现交换分裂和交换场的铁磁绝缘体。其次,我们研究了石墨烯中局域p_z轨道缺陷(即吸附的氢原子)产生的磁矩的性质。这些磁矩的行为进行了研究,使用非局域自旋输运直接探测自旋自由度的缺陷诱导状态。我们还报告了存在的增强电子g-因素所造成的交换领域存在于系统中。重要的是,交换场被发现是高度依赖于栅极,随着载流子密度的增加而降低g因子。

英文摘要:

Magnetism in graphene is an emerging field that has received much theoretical attention. In particular, there have been exciting predictions for induced magnetism through proximity to a ferromagnetic insulator as well as through localized dopants and defects. Here, we discuss our experimental work using molecular beam epitaxy (MBE) to modify the surface of graphene and induce novel spin-dependent phenomena. First, we investigate the epitaxial growth the ferromagnetic insulator EuO on graphene and discuss possible scenarios for realizing exchange splitting and exchange fields by ferromagnetic insulators. Second, we investigate the properties of magnetic moments in graphene originating from localized p_z-orbital defects (i.e. adsorbed hydrogen atoms). The behavior of these magnetic moments is studied using non-local spin transport to directly probe the spin-degree of freedom of the defect-induced states. We also report the presence of enhanced electron g-factors caused by the exchange fields present in the system. Importantly, the exchange field is found to be highly gate dependent, with decreasing g-factors with increasing carrier densities.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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