GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources.
GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of electronic-photonic integrated circuits. One tactic to improve the lasing performance of GeSn lasers is to use a high Sn content, which improves the directness. Another popular approach is to use a low to moderate Sn content with either compressive strain relaxation or tensile strain engineering, but these strain engineering techniques generally require optical cavities to be suspended in air, which leads to poor thermal management. In this work, we develop a novel dual insulator GeSn-on-insulator…
GeSn alloys are promising candidates for complementary metal-oxide-semiconductor (CMOS)-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance. However, the suspended device configuration that has thus far been introduced to relax the strain is destined to limit heat dissipation, thus hindering the device performance. Herein, we demonstrate that strain-free GeSn microdisk laser devices fully released on Si outperform the canonical suspended devices. This approach allows to simultaneously relax the l…
We report on the design of a waveguide coupled GeSn microdisk-laser cavity in which the germanium virtual substrate serving as a template for GeSn growth is repurposed for the definition of passive on-chip interconnection waveguides. A main challenge resides in transferring the optical power from the upper (Si)GeSn gain stack to the underlying virtual substrate layer and is solved with laser mode engineering. Designs are based on experimentally realized layer stacks and waveguide outcoupling efficiencies as high as 27% are shown in compact resonator geometries with a small, 7 $μ$m radius, with…
GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and active areas, which prevent the realization of densely integrated on-chip lasers operating at low power consumption. Here, we present a 1D photonic crystal (PC) nanobeam with a very small device footprint of 7 $μm^2$ and a compact active area of ~1.2 $μm^2$ on a high-quality GeSn-on-insulator (GeSnOI) substrate. We also report that the improved directness i…
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of …
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band-gap semiconducto…
Metastable wurtzite crystal phases of semiconductors comprise enormous potential for high-performance electro-optical devices, owed to their extended tunable direct band gap range. However, synthesizing these materials in good quality and beyond nanowire size constraints has remained elusive. In this work, the epitaxy of wurtzite InP microdisks and related geometries on insulator for optical applications is explored. This is achieved by an elaborate combination of selective area growth of fins and a zipper-induced epitaxial lateral overgrowth, which enables co-integration of diversely shaped c…
We propose a coupled microdisk laser as a compact and tunable laser source for the generation of a coherent continuous wave THz radiation by photomixing. Using the Schrödinger-Bloch model including the nonlinear effect of active medium, we find single mode and two mode lasings depending on the pumping strength. We explain the transitions of lasing modes in terms of resonant modes which are the solutions of the Schrödinger-Bloch model without active medium and nonlinear interaction. In particular, a two mode lasing is shown to generate THz oscillating frequency originating from the light beatin…
We demonstrate lasing mode selection in nearly circular semiconductor microdisks by shaping the spatial profile of optical pump. Despite of strong mode overlap, adaptive pumping suppresses all lasing modes except the targeted one. Due to slight deformation of the cavity shape and boundary roughness, each lasing mode has distinct emission pattern. By selecting different mode to be the dominant lasing mode, we can switch both the lasing frequency and the output direction. Such tunability by external pump after the laser is fabricated enhances the functionality of semiconductor microcavity lasers…
We demonstrate an effective control of nonlinear interactions of lasing modes in a semiconductor microdisk cavity by shaping the pump profile. A target mode is selected at the expense of its competing modes either by increasing their lasing thresholds or suppressing their power slopes above the lasing threshold. Despite of strong spatial overlap of the lasing modes at the disk boundary, adaptive pumping enables an efficient selection of any lasing mode to be the dominant one, leading to a switch of lasing frequency. The theoretical analysis illustrates both linear and nonlinear effects of sele…
We perform numerical studies of the effect of sidewall imperfections on the resonant state broadening of the optical microdisk cavities for lasing applications. We demonstrate that even small edge roughness causes a drastic degradation of high-Q whispering gallery (WG) mode resonances reducing their Q-values by many orders of magnitude. At the same time, low-Q WG resonances are rather insensitive to the surface roughness. The results of numerical simulation obtained using the scattering matrix technique, are analyzed and explained in terms of wave reflection at a curved dielectric interface co…
A long existing issue for microdisk lasers is the small spontaneous emission coupling rate (β) in microdisk,. We found that it is due to the coupling of emitter spontaneous emission into competing Fabry-Perot (FP) modes in the microdisk cavity. Based on this analysis, we propose a new type of photonic crystal microdisk (PCM) laser to drastically suppress the photonic density of states in the vertical FP modes. As a result, we obtained a three fold increase of β than previously reported highest β of 0.15 at room temperature. The spontaneous emission control in truncated photonic crystals become…
We have developed a scattering-matrix approach for numerical calculation of resonant states and Q-values of a nonideal optical disk cavity of an arbitrary shape and of an arbitrary varying refraction index. The developed method has been applied to study the effect of surface roughness and inhomogeneity of the refraction index on Q-values of microdisk cavities for lasing applications. We demonstrate that even small surface roughness can lead to a drastic degradation of high-Q cavity modes by many orders of magnitude. The results of numerical simulation are analyzed and explained in terms of wav…
We report single-mode lasing in subwavelength GaAs disks under optical pumping. The disks are fabricated by standard photolithography and two steps of wet chemical etching. The simple fabrication method can produce submicron disks with good circularity, smooth boundary and vertical sidewalls. The smallest lasing disks have a diameter of 627 nm and thickness of 265 nm. The ratio of the disk diameter to the vacuum lasing wavelength is about 0.7. Our numerical simulations confirm that the lasing modes are whispering-gallery modes with the azimuthal number as small as 4 and very small mode volume.
Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs dots-in-a-well (DWELL) is performed using an optical-fiber-based probing technique at a wavelength (lambda~1400 nm) that is red-detuned from the dot emission wavelength (lambda~1200 nm). Measurements in the 1400 nm wavelength band on microdisks of diameter D = 4.5 microns show that these structures support modes with cold-cavity quality factors as high as 360,000. DWELL-…
Formation, emission and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs having nano-pan-cake shape have height of ~2 nm, lateral size of 20-50 nm and density of ~5x109 cm-2. Their emission observed at ~940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character indicating In-As intermixing, as confirmed by band structure calculations. We observed l…
Miniature semiconductor lasers have attracted a large amount of interest owing to their potential as highly integrated components in photonic circuits or in sensors. Particularly, microdisk lasers exploiting whispering gallery modes have been regarded as an important candidate because of their relatively small footprint and low threshold. However, it has been challenging for microdisk to operate under single mode operation and to lase in a preselected mode. We report subwavelength microdisk resonators suspended in air with connecting bridges and propose a simple method using the number and sym…
Photonic-based low-phase-noise microwave generation with real-time frequency tuning is crucial for a broad spectrum of subjects, including next-generation wireless communications, radar, metrology, and modern instrumentation. Here, for the first time to the best of our knowledge, narrow-bandwidth dual-wavelength microlasers are generated from nearly degenerate polygon modes in a high-Q active lithium niobate microdisk. The high-Q polygon modes formation with independently controllable resonant wavelengths and free spectral ranges is enabled by the weak perturbation of the whispering gallery mi…
Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons …
The quality factor (Q), mode volume (Veff), and room-temperature lasing threshold of microdisk cavities with embedded quantum dots (QDs) are investigated. Finite element method simulations of standing wave modes within the microdisk reveal that Veff can be as small as 2(lambda/n)^3 while maintaining radiation-limited Qs in excess of 10^5. Microdisks of diameter D=2 microns are fabricated in an AlGaAs material containing a single layer of InAs QDs with peak emission at lambda = 1317 nm. For devices with Veff ~2 (lambda/n)^3, Qs as high as 1.2 x 10^5 are measured passively in the 1.4 micron band…
InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs in the active layer, provides a critical step for the nitrides in realizing low threshold photonic devices with efficient coupling between QDs and an optical cavity.
We demonstrate uni-directional evanescent coupling of lasing emission from a wavelength-scale deformed microdisk to a waveguide. This is attributed to the Goos-Hänchen shift and Fresnel filtering effect that result in a spatial separation of the clockwise (CW) and counter-clockwise (CCW) propagating ray orbits. By placing the waveguide tangentially at different locations to the cavity boundary, we may selectively couple the CW (CCW) wave out, leaving the CCW (CW) wave inside the cavity, which also reduces the spatial hole burning effect. The device geometry is optimized with a full-wave simula…
Hybridization of surface-plasmon and dielectric waveguide whispering-gallery modes are demonstrated in a semiconductor microdisk laser cavity of sub-wavelength proportions. A metal layer is deposited on top of the semiconductor microdisk, the radius of which is systematically varied to enable mode hybridization between surface-plasmon and dielectric modes. The anti-crossing behavior of the two cavity mode types is experimentally observed via photoluminescence spectroscopy and optically pumped lasing action at a wavelength of 1.3 micron is achieved at room temperature.
Integrated on-chip microdisk lasers have attracted great attention as a light source of compact size, low lasing threshold and narrow bandwidth. However, challenges remain unresolved in terms of single mode operation at high output power while maintaining the ultra-narrow bandwidth. In this work, we demonstrate monolithically integrated on-chip single-frequency microdisk lasers coupled with bus-waveguides fabricated by photolithography assisted chemo-mechanical etching. Owing to the high-Q factor of a polygon whispering gallery mode formed in the microdisk and long cavity lengths (e.g., 409 um…
On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase matching, i.e. the most efficient energy transfer scheme, for very short gap sizes and thin waveguides (g = 45 nm and w = 170 nm) in the spontaneous emission regime. Whispering gallery mode lasing is…
The smaller the size of a light-emitting microcavity, the more important it becomes to understand the effects of the cavity boundary on the optical mode profile. Conventional methods of laser physics, such as the paraxial approximation, become inapplicable in many of the more exotic cavity designs to be discussed here. Cavities in the shape of microdisks, pillars and rings can yield low lasing thresholds in a wide variety of gain media: quantum wells, wires and even dots, as well as quantum cascade superlattices and GaN. An overview of the experimental and theoretical status is provided, with …
Optically pumped InAs quantum dot microdisk lasers with grooves etched on their surface by a focused ion beam is studied. It is shown that the radial grooves, depending on their length, suppress the lasing of specific radial modes of the microdisk. Total suppression of all radial modes except for the fundamental radial one is also demonstrated. The comparison of laser spectra measured at 78 K before and after ion beam etching for microdisk of 8 $μ$m in diameter shows a six-fold increase of mode spacing, from 2.5 nm to 15.5 nm, without significant decrease of the dominant mode quality factor. N…
We demonstrate a C-band wavelength-tunable microlaser with an Er3+ doped high quality (~1.02x10^6) lithium niobate microdisk resonator. With a 976 nm continuous-wave pump laser, lasing action can be observed at a pump power threshold as low as ~250 μW at room temperature. Furthermore, the microdisk laser wavelength can be tuned by varying the pump laser power, showing a tuning efficiency of ~-17.03 pm/mW at low pump power blow 13 mW, and 10.58 pm/mW at high pump power above 13 mW.
Limaçon-shaped microdisk lasers are promising on-chip light sources with low lasing threshold and unidirectional output. We conduct an experimental study on the lasing dynamics of Limaçon-shaped semiconductor microcavities. The edge emission exhibits intensity fluctuations over a wide range of spatial and temporal scales. They result from multiple dynamic processes with different origins and occurring on different spatiotemporal scales. The dominant process is an alternate oscillation between two output beams with a period as short as a few nanoseconds.
Recently, on-chip single-mode laser emission has attracted considerable research attention due to its wide applications. While most of single-mode lasers in coupled microdisks or microrings have been qualitatively explained by either Vernier effect or inversed Vernier effect, none of them have been experimentally confirmed. Here, we studied the mechanism for single-mode operation in coupled microdisks. We found that the mode numbers had been significantly reduced to nearly single-mode within a large pumping power range from threshold to gain saturation. The detail laser spectra showed that the…
Solution-based perovskite nanoparticles have been intensively studied in past few years due to their applications in both photovoltaic and optoelectronic devices. Here, based on the common ground between the solution-based perovskite and random lasers, we have studied the mirrorless lasing actions in self-assembled perovskite nanoparticles. After the synthesis from solution, discrete lasing peaks have been observed from the optically pumped perovskites without any well-defined cavity boundaries. The obtained quality (Q) factors and thresholds of random lasers are around 500 and 60 uJ/cm2, resp…
Here we report lasing action in limaçon-shaped GaAs microdisks with quantum dots (QDs) embedded. Although the intracavity ray dynamics is predominantly chaotic, high-$Q$ modes are concentrated in the region $χ> χ_c$ as a result of wave localization. Strong optical confinement by total internal reflection leads to very low lasing threshold. Our measurements show that all the lasing modes have output in the same direction, regardless of their wavelengths and intracavity mode structures. This universal emission direction is determined by directed phase space flow of optical rays in the open chaot…
We show from ab initio laser theory that by choosing an appropriate spatial pump profile, many different spatial modes of a typical microlaser can be turned on at the same pump energy, substantially increasing the number, N, of simultaneous lasing modes. The optimal pump profile can be obtained simply from knowledge of the space-dependent saturated gain profile when the system is uniformly pumped up to the Nth modal threshold. We test this general result by applying it to a two-dimensional diffusive random laser and a microdisk laser. Achieving highly multimode lasing at reasonable pump powers…
We investigate the range of validity of the recently developed steady-state ab-initio laser theory (SALT). While very efficient in describing various microlasers, SALT is conventionally believed not to be applicable to lasers featuring fully or nearly degenerate pairs of resonator modes above the lasing threshold. Here we demonstrate how SALT can indeed be extended to describe such cases as well, with the effect that we significantly broaden the theory's scope. In particular, we show how to use SALT in conjunction with a linear stability analysis to obtain stable single-mode lasing solutions t…
We demonstrate that the above-threshold behavior of a laser can be strongly affected by exceptional points which are induced by pumping the laser nonuniformly. At these singularities, the eigenstates of the non-Hermitian operator which describes the lasing modes coalesce. In their vicinity, the laser may turn off even when the overall pump power deposited in the system is increased. Such signatures of a pump- induced exceptional point can be experimentally probed with coupled ridge or microdisk lasers.
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integration is complex and therefore costly. However, where low costs and also high integration density are crucial, group-IV-based lasers - made of Ge and GeSn, for example - could be an alternative, provided their performance can be improved. Such progresses will come with better materials but also with the development of a profounder understanding of the…
We report on fabrication of whispering-gallery-mode microlasers in a Nd:glass chip by femtosecond laser three-dimensional (3D) micromachining. Main fabrication procedures include the fabrication of freestanding microdisks supported by thin pillars by femtosecond laser ablation of the glass substrate immersed in water, followed by CO2 laser annealing for surface smoothing. Lasing is observed at a pump threshold as low as ~69 μW at room temperature with a continuous-wave laser diode operating at 780nm. This technique allows for fabrication of microcavities of high quality factors in various diel…
Lead halide perovskite based micro- and nano- lasers have been widely studied in past two years. Due to their long carrier diffusion length and high external quantum efficiency, lead halide perovskites have been considered to have bright future in optoelectronic devices, especially in the "green gap" wavelength region. However, the quality (Q) factors of perovskite lasers are unspectacular compared to conventional microdisk lasers. The record value of full width at half maximum (FWHM) at threshold is still around 0.22 nm. Herein we synthesized solution-processed, single-crystalline CH3NH3PbBr3…
