We report on the design of a waveguide coupled GeSn microdisk-laser cavity in which the germanium virtual substrate serving as a template for GeSn growth is repurposed for the definition of passive on-chip interconnection waveguides. A main challenge resides in transferring the optical power from the upper (Si)GeSn gain stack to the underlying virtual substrate layer and is solved with laser mode engineering. Designs are based on experimentally realized layer stacks and waveguide outcoupling efficiencies as high as 27% are shown in compact resonator geometries with a small, 7 $μ$m radius, with 42% of the power being recycled in the laser cavity.
GeSn alloys are promising candidates for complementary metal-oxide-semiconductor (CMOS)-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance. However, the suspended device configuration that has thus far been introduced to relax the strain is destined to limit heat dissipation, thus hindering the device performance. Herein, we demonstrate that strain-free GeSn microdisk laser devices fully released on Si outperform the canonical suspended devices. This approach allows to simultaneously relax the l…
GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and active areas, which prevent the realization of densely integrated on-chip lasers operating at low power consumption. Here, we present a 1D photonic crystal (PC) nanobeam with a very small device footprint of 7 $μm^2$ and a compact active area of ~1.2 $μm^2$ on a high-quality GeSn-on-insulator (GeSnOI) substrate. We also report that the improved directness i…
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layer…
GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of electronic-photonic integrated circuits. One tactic to improve the lasing performance of GeSn lasers is to use a high Sn content, which improves the directness. Another popular approach is to use a low to moderate Sn content with either compressive strain relaxation or tensile strain engineering, but these strain engineering techniques generally require optical cavities to be suspended in air, which leads to poor thermal management. In this work, we develop a novel dual insulator GeSn-on-insulator…
The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers through electrical injection have not been experimentally achieved yet. In this work, we report the first demonstration of electrically injected GeSn lasers on Si. A GeSn/SiGeSn heterostructure diode grown on a Si substrate was fabricated into ridge waveguide laser devices and tested under pulsed conditions. Special considerations were given for the structure de…
GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just begun only recently. In this work, we present explorative investigations of electrically injected GeSn heterostructure lasers with various layer thicknesses and material compositions. The cap layer total thickness was varied between 240 and 100 nm. At 10 K, a 240-nm-SiGeSn capped device had a threshold current density Jth = 0.6 kA/cm2 compared to Jth = 1.4 …
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band-gap semiconducto…
The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings new challenges related to the metastability of this class of materials. As a matter of fact, maintaining a reduced thermal budget throughout all processing steps of GeSn devices is essential to avoid possible material degradation. This constraint is exacerbated by the need for higher Sn contents along with an enhanced strain relaxation to achieve efficient mid-infrared devices. Herein, as a low thermal budget solution for post-epitaxy processing, we elucidate the effects of laser thermal annealing (LTA) …
CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myriad of applications in sensing and communications. In this regard, a group IV germanium-tin (GeSn) material epitaxially grown on silicon (Si) emerges as a promising platform to implement tunable infrared light emitters. Indeed, upon increasing the Sn content, the bandgap of GeSn narrows and becomes direct, making this material system suitable for developing an efficient silicon-compatible emitter. With this perspectiv…
Direct laser writing of surface waveguides with ultrashort pulses is a crucial achievement towards all-laser manufacturing of photonic integrated circuits sensitive to their environment. In this Letter, few-cycle laser pulses (with a sub-10 fs duration) are used to produce subsurface waveguides in a non-doped, non-coated fused silica substrate. The fabrication technique relies on laser-induced microdensification below the threshold for nanopore formation. The optical losses of the fabricated waveguides are governed by the optical properties of the superstrate. We have measured losses ranging f…
We present quantum cascade laser (QCL) frequency comb devices with engineered waveguides for managing the dispersion. The QCL waveguide consists of multiple sections with different waveguide widths. The narrow and wide sections of the waveguide are designed in a way to compensate the group velocity dispersion (GVD) of each other and thereby produce a flat and slightly negative GVD for the QCL. The QCL exhibits continuous comb operation over a large part of the dynamic range of the laser. Strong and narrow-linewidth intermode beatnotes are achieved in more than 300 mA wide operation current ran…
Coherent laser arrays compatible with silicon photonics are demonstrated in a waveguide geometry in epitaxially grown semiconductor membrane quantum well lasers transferred on substrates of silicon carbide and oxidised silicon; we record lasing thresholds as low as 60 mW of pump power. We study the emission of single lasers and arrays of lasers in the sub-mm range. We are able to create waveguide laser arrays with modal widths of approximately 5-10 μm separated by 10-20 μm, using real and reciprocal space imaging we study their emission characteristics and find that they maintain their mutual …
Quill effect, one of the intriguing phenomena in ultrafast laser writing, to our knowledge, has not been studied in low-loss-waveguide (LLW) writing regime yet, probably due to its invisibility under conventional white-light microscope in that regime. In this report, with help of adaptive third harmonic generation microscopy we reveal the quill effect in LLW writing regime and study its influences on the properties of written photonic integrated components in term of polarization-related properties in fused silica and beam-splitting ratio of three-waveguide-coupler in borosilicate glass.
An InAs-on-InP quantum dash buried heterostructure laser and silicon chip optimized for mutual integration by direct facet-to-facet coupling have achieved -1.2 dB coupling efficiency, with coupled laser RIN of -150 dB/Hz and 152 kHz linewidth.
An all-diamond photonic circuit was implemented by integrating a diamond microsphere with a femtosecond-laser-written bulk diamond waveguide. The near surface waveguide was fabricated by exploiting the Type II fabrication method to achieve stress-induced waveguiding. Transverse electrically and transverse magnetically polarized light from a tunable laser operating in the near-infrared region was injected into the diamond waveguide, which when coupled to the diamond microsphere showed whispering-gallery modes with a spacing of 0.33 nm and high-quality factors of 105. By carefully engineering th…
This work represents a particular application of waveguide fabricated by femtosecond laser micromachining technology. More specifically, we report the development of an optical modulator based on the fabrication of single-mode optical waveguide structures buried in X-cut lithium niobate crystal with the femtosecond laser direct writing method. Here, change in refractive index profile is measured using near field intensity profile measurement method at optimized writing conditions. It has been observed that the change refractive index (Δn) is in the range of 10-4. Finally, the behavior of femto…
We present the realization of mid-infrared waveguide by ultrafast laser inscription technique in a chalcogenide glass. Our approach is based on multicore waveguide that consists in an alignment on a mesh of positive refractive index channels placed parallel to each other. Two different meshes are investigated with different refractive index contrasts between the channel and the glass matrix. A detailed analysis of the performances at a wavelength of 4.5 $μ$m shows propagation losses of 0.20 $\pm$ 0.05 dB/cm and coupling efficiencies higher than 60 %.
Tailoring the birefringence of femtosecond-laser-written multi-scan waveguides in glass
Istituto di Fotonica e Nanotecnologie - Consiglio Nazionale delle Ricerche（意大利国家研究委员会光子学与纳米技术研究所）；Dipartimento di Fisica - Politecnico di Milano（米兰理工大学物理系）
By applying a coupled-Bloch-mode approach, we have derived a simple expression for the transmission properties of photonic crystal (PhC) line-defect waveguides with a complex refractive index perturbation. We have provided physical insights on the coupling mechanism by analyzing the frequency dependence and relative strength of the coupling coefficients. We have shown the impact of the perturbation on the waveguide dispersion relation and how the gain-induced distributed feedback limits the maximum attainable slow-light enhancement of the gain itself. We have then applied our approach to analy…
We report the first demonstration of a 1555 nm stepped-height ridge waveguide polarization mode converter monolithically integrated with a side wall grating distributed-feedback (DFB) laser using the identical epitaxial layer scheme. The device shows stable single longitudinal mode (SLM) operation with the output light converted from TE to TM polarization with an efficiency of >94% over a wide range of DFB injection currents (IDFB) from 140 mA to 190 mA. The highest TM mode purity of 98.2% was obtained at IDFB=180 mA. A particular advantage of this device is that only a single step of metalorg…
Lasers that operate in the visible wavelength range and can be easily integrated on a chip together with photonic integrated circuits are of particular interest for biophotonic applications. We present a new class of laser sources that emit at 600 nm wavelength and can be efficiently integrated on the $\mathrm{Si}_3\mathrm{N}_4$ platform using low-cost fabrication techniques. The $\mathrm{Si}_3\mathrm{N}_4$-organic hybrid lasers are optically pumped from top without the need of a precise alignment. We investigate different laser geometries based on spiral shaped ring resonators and distributed…
In this work, a design for a mid-infrared quantum cascade laser (QCL) frequency comb source that enhances the high frequency response and the comb characteristics of the device is presented . A state-of-the-art active region (AR), grown on a heavily n-doped InP:Si substrate, was processed into a buried heterostructure with a microstrip-like line waveguide. As a result, the repetition rate frequency $f_{rep}$, around 11.09 GHz, can be locked to an injected narrow-linewidth radio frequency (RF) signal, over a range of more than 200 kHz with -10 dBm of injected power, which outperforms normal bur…
We demonstrated fabrication of waveguide and directional coupler in bulk glass-ceramics Zerodur, through femtosecond laser direct-writing. Waveguide propagation loss of no more than 1.5 dB/cm was achieved. We expect this will lead to the deployment of Zerodur integrated photonics in fields like space-borne astronomy, quantum technology and fundamental physics, for both economic and technical benefits.
Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However a las…
Lithium niobate on insulator (LNOI), as an emerging and promising optical integration platform, faces shortages of on-chip active devices including lasers and amplifiers. Here, we report the fabrication on-chip erbium-doped LNOI waveguide amplifiers based on electron beam lithography and inductively coupled plasma reactive ion etching. A net internal gain of ~30 dB/cm in communication band was achieved in the fabricated waveguide amplifiers under the pump of a 974-nm continuous laser. This work develops new active devices on LNOI and will promote the development of LNOI integrated photonics.
We demonstrate an external cavity laser formed by combining a silicon nitride photonic integrated circuit with a reflective semiconductor optical amplifier. The laser uses an alignment tolerant edge coupler formed by a multi-mode waveguide splitter right at the edge of the silicon nitride chip that relaxes the required alignment to the III-V gain chip and equally splits the power among its two output waveguides. Both the ground and first order mode are excited in the coupler and reach the quadrature condition at the waveguide junction, ensuring equal power to be coupled to both. Two high-quali…
We provide a solution toward compact and low-loss three dimensional (3D) photonic circuits by femtosecond laser direct writing of 3D waveguides in fused silica. We suppress the bend loss by sandwiching the waveguide between a pair of walls formed by internal modification of glass. Our method allows to reduce the bend loss of a curved waveguide with a bending radius of 15 mm by more than one order of magnitude.
Local laser oxidation of a thin titanium film is considered as a means of a precise adjustment of losses and effective refractive index of dielectric optical waveguides. A fine phase control of an operating point and extinction ratio enhancement up to 57 dB were demonstrated using an integrated optical Ti:LiNbO3 Mach-Zehnder modulator. This technique only slightly affects the dielectric waveguide material and is very promising for a high precision permanent trimming of photonic devices based on dielectric waveguides of different material platforms and fabrication technologies.
Satellite-based quantum technologies represent a possible route for extending the achievable range of quantum communication, allowing the construction of worldwide quantum networks without quantum repeaters. In space missions, however, the volume available for the instrumentation is limited, and footprint is a crucial specification of the devices that can be employed. Integrated optics could be highly beneficial in this sense, as it allows for the miniaturization of different functionalities in small and monolithic photonic circuits. In this work, we report on the qualification of waveguides f…
Modifying light fields at single-photon level is a key challenge for upcoming quantum technologies and can be realized in a scalable manner through integrated quantum photonics. Laser-written diamond photonics offers three-dimensional fabrication capabilities and large mode-field diameters matched to fiber optic technology, though limiting the cooperativity at the single-emitter level. To realize large cooperativities, we combine excitation of single shallow-implanted silicon vacancy centers via large numerical aperture optics with detection assisted by laser-written type-II waveguides. We dem…
In this work, for the first time of our knowledge, we present a well-supported procedure to fabricate ridge optical waveguides onto thin films of PLZT by femtosecond laser ablation. In order to achieve smooth guiding structures to guarantee good optical performance, we have studied the ablation threshold characteristics for different kinematic conditions of fs laser machining and also we have explored the different ablation regimens for several fluencies reached. Besides, we characterize the morphology and roughness of ridge waveguides through a modal and scattering loss analysis, for waveguid…
