工作温度可达130 K的接枝型AlGaAs/GeSn光泵浦激光器
Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K
AI总结：
针对传统工艺制备的GeSn激光器性能受限问题，本研究采用半导体接枝技术制备AlGaAs/GeSn异质结光泵浦激光器，实现77K下11.06mW的激光阈值与130K的最高工作温度，为室温电注入GeSn激光器研发提供新思路。
摘要：
IV族GeSn双异质结（DHS）激光器兼具直接带隙与CMOS兼容性的独特优势。然而，传统外延生长和晶圆键合制备的GeSn结性能有限，已成为激光器性能进一步提升的瓶颈。本研究利用半导体接枝技术合成并表征了光泵浦脊型边发射激光器（EELs）：将AlGaAs纳米膜（NM）转印至外延生长的GeSn衬底上，二者通过超薄Al₂O₃层形成界面。该接枝型AlGaAs/GeSn DHS激光器在77 K下的激光阈值为11.06 mW，最高激光工作温度为130 K。这些结果凸显了接枝技术在增强载流子与光场限制方面的潜力，为室温电注入GeSn激光器的研发铺平了道路。
英文摘要：
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventional epitaxy and wafer bonding. This work leverages semiconductor grafting to synthesize and characterize optically pumped ridge edge-emitting lasers (EELs) with an AlGaAs nanomembrane (NM) transfer-printed onto an epitaxially grown GeSn substrate, interfaced by an ultrathin Al2O3 layer. The grafted AlGaAs/GeSn DHS lasers show a lasing threshold of 11.06 mW at 77 K and a maximum lasing temperature of 130 K. These results highlight the potential of the grafting technique for enhancing charge carrier and optical field confinements, paving the way for room-temperature electrically injected GeSn lasers.
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