Dirac carriers in graphene are commonly characterized by a pseudospin degree of freedom, arising from the degeneracy of the two inequivalent sublattices. The inherent chirality of the quasiparticles leads to a topologically non-trivial band structure, where the in-plane component of sublattice spin and momentum are intertwined. Equivalently, sublattice imbalance is intimately connected with angular momentum, inducing a torque of opposite sign at each Dirac point. In this work we develop an intuitive picture that associates sublattice spin and winding number with angular momentum. We develop a microscopic perturbative model to obtain the finite angular momentum contributions along the main crystallographic directions. Our results can be employed to determine the angular dependence of the g-factor and of light absorption in honeycomb bipartite structures.
We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and temperature, both long-ranged Coulomb scattering and short-ranged defect scattering within a Boltzmann theory relaxation time approach. For experimentally relevant disorder, impurity scattering contributes a resistivity comparable to (much larger than) the phonon scattering contribution at high (low) temperatures. Decreasing twist angle leads to larger resi…
We show that the conductivity of a two-dimensional electron gas can be intrinsically anisotropic despite isotropic Fermi surface, energy dispersion, and disorder configuration. In the model we study, the anisotropy stems from the interplay between Dirac and Schrödinger features combined in a special two-band Hamiltonian describing the quasiparticles similar to the low-energy excitations in phosphorene. As a result, even scalar isotropic disorder scattering alters the nature of the carriers and results in anisotropic transport. Solving the Boltzmann equation exactly for such carriers with point…
Magic angle twisted bilayer graphene has emerged as a powerful platform for studying strongly correlated electron physics, owing to its almost dispersionless low-energy bands and the ability to tune the band filling by electrostatic gating. Techniques to control the twist angle between graphene layers have led to rapid experimental progress but improving sample quality is essential for separating the delicate correlated-electron physics from disorder effects. Owing to the 2D nature of the system and the relatively low carrier density, the samples are highly susceptible to small doping inhomoge…
We investigate the polarization dependence of the carrier excitation and relaxation in epitaxial multilayer graphene. Degenerate pump-probe experiments with a temporal resolution of 30 fs are performed for different rotation angles of the pump-pulse polarization with respect to the polarization of the probe pulse. A pronounced dependence of the pump-induced transmission on this angle is found. It reflects a strong anisotropy of the pump-induced occupation of photogenerated carriers in momentum space even though the band structure is isotropic. Within 150 fs after excitation an isotropic carrie…
Motivated by recent experimental findings on the low-energy spectrum of Kekulé-patterned graphene, the optoelectronic signatures of graphene superlattices with a spatial modulation that triples the size of the unit cell and folds the valleys to the center of the Brillouin zone are studied. For superlattices like those visualized in recent experiments, the optoelectronic response reveals multiple species of carriers distinguished by their effective masses or Fermi velocities. Their signatures are similar to those of systems hosting multifold fermions in which different frequency intervals are d…
The revisited theoretical phase diagrams for thin films of cubic helimagnets with the easy-plane anisotropy are shown to have different topology as previously reported [Phys. Rev. B 85, 094429 (2012)]. For both in-plane and out-of-plane directions of an applied magnetic field, the phase diagrams exhibit extensive areas of stable skyrmions, which overlap for a wide range of anisotropy parameters. Although the existence of the out-of-plane skyrmions was contradicted within the previous theoretical models, we prove that additional surface twists lead to their stability, while the moderate easy-pl…
The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged impurity-limited carrier mobility $μ$ in bare and encapsulated monolayer phosphorene. We find a significant temperature dependence in the carrier mobilities ($μ\propto T^{-γ}$) that results from the temperature variability of the charge screening and varies with the crystal orientation. The anisotropy in the effective mass leads to an anisotropic carrier mobi…
Polarization dependences of the terahertz radiation emitted by hot charge carriers in p-Te have been studied both theoretically and experimentally. The angular dependences of the spontaneous radiation emission by hot carriers is shown to originate from the anisotropy of their dispersion law and the anisotropy of the dielectric permittivity of a tellurium crystal. We have shown that the polarization dependences of radiation are determined by the angle between the crystallographic axis C3 in p-Te and the polarization vector; they are found to have a periodic character.
We theoretically investigate the interband transitions and quantum kinetics induced by light carrying orbital angular momentum, or twisted light, in bulk semiconductors. We pose the problem in terms of the Heisenberg equations of motion of the electron populations, and inter- and intra-band coherences. Our theory extends the free-carrier Semiconductor Bloch Equations to the case of photo-excitation by twisted light. The theory is formulated using cylindrical coordinates, which are better suited to describe the interaction with twisted light than the usual cartesian coordinates used to study re…
We theoretically investigate optical injection processes, including one- and two-photon carrier injection and two-color coherent current injection, in twisted bilayer graphene with moderate angles. The electronic states are described by a continuum model, and the spectra of injection coefficients are numerically calculated for different chemical potentials and twist angles, where the transitions between different bands are understood by the electron energy resolved injection coefficients. The comparison with the injection in monolayer graphene shows the significance of the interlayer coupling …
We report scanning tunneling microscopy (STM) and spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ~ 4.5o the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron doping at the graphene/SiC interface. We observed an unexpected result that the local Dirac point around a nanoscaled defect shifts towards the Fermi energy during the STS measurements (with a time scale about 100 seconds). This behavior was attributed to the decoupling between the twisted graphene and the substrate during the measurements, which lowers the carrier densi…
We investigate the Ruderman-Kittel-Kasuya-Yosida oscillations of the itinerant carrier spin density in a system where those oscillations appear only due to a finite distribution of a localized spin. The system represents a half-infinite one-dimensional quantum wire with a magnetic impurity located at its edge. In contrast to the conventional model of a point-like exchange interaction the itinerant carrier spin density oscillations in this system exist. We {\it analytically} demonstrate that when the radius of the exchange interaction is less than the wave length of the itinerant carriers livin…
Due to its potential connection with nematicity, electronic anisotropy has been the subject of intense research effort on a wide variety of material platforms. The emergence of spatial anisotropy not only offers a characterization of material properties of metallic phases, which cannot be accessed via conventional transport techniques, but it also provides a unique window into the interplay between Coulomb interaction and broken symmetry underlying the electronic order. In this work, we utilize a new scheme of angle-resolved transport measurement (ARTM) to characterize electron anisotropy in m…
We have investigated the effect of twisting on electronic band structure, effective mass and carrier mobilities of three prototypes of AGNRs (N=6, 7 & 8) using Density functional theory combined with Deformation potential theory and Effective mass approximation. It is shown that the influence of twisted modes electron-phonon interaction is smaller than stretching modes, nonetheless, twisting has a profound effect on effective mass and mobilities. Similar to earlier reported conclusion in which the ideal N=3n wide HAGNR potentially exhibit an electron mobility comparable to intrinsic graphene, …
We determine the spin-lifetime anisotropy of spin-polarized carriers in graphene. In contrast to prior approaches, our method does not require large out-of-plane magnetic fields and thus it is reliable for both low- and high-carrier densities. We first determine the in-plane spin lifetime by conventional spin precession measurements with magnetic fields perpendicular to the graphene plane. Then, to evaluate the out-of-plane spin lifetime, we implement spin precession measurements under oblique magnetic fields that generate an out-of-plane spin population. We find that the spin-lifetime anisotr…
Twist- and gate-tunable proximity spin-orbit coupling, spin relaxation anisotropy, and charge-to-spin conversion in heterostructures of graphene and transition-metal dichalcogenides
In this work we carry out a theoretical study of the phonon-induced resistivity in twisted double bilayer graphene (TDBG), in which two Bernal-stacked bilayer graphene devices are rotated relative to each other by a small angle $θ$. We show that at small twist angles ($θ\sim 1^\circ$) the effective mass of the TDBG system is greatly enhanced, leading to a drastically increased phonon-induced resistivity in the high-temperature limit where phonon scattering leads to a linearly increasing resistivity with increasing temperature. We also discuss possible implications of our theory on superconduct…
We report high magnetic field scanning tunneling microscopy and Landau level spectroscopy of twisted graphene layers grown by chemical vapor deposition. For twist angles exceeding ~3 degrees the low energy carriers exhibit Landau level spectra characteristic of massless Dirac fermions. Above 20 degrees the layers effectively decouple and the electronic properties are indistinguishable from those in single layer graphene, while for smaller angles we observe a slow-down of the carrier velocity which is strongly angle dependent. At the smallest angles the spectra are dominated by twist induced Va…
Recent techniques have allowed transition metal dichalcogenides (TMD) monolayers to be grown and adequately characterised. Of particular interest, their nonlinear optical response presents many promising opportunities for future nanophotonic devices and technology. The dispersion of the carriers is trigonally-warped, leading to an anisotropic Fermi surface for low-lying states. In this paper, the effects of such a deformation on the nonlinear harmonic generation are studied by considering a tight-binding model expanded up to third order in $\mathbf{k} \cdot \mathbf{p}$. By solving exactly the …
Anisotropy describes the directional dependence of a material's properties such as transport and optical response. In conventional bulk materials, anisotropy is intrinsically related to the crystal structure, and thus not tunable by the gating techniques used in modern electronics. Here we show that, in bilayer black phosphorus with an interlayer twist angle of 90°, the anisotropy of its electronic structure and optical transitions is tunable by gating. Using first-principles calculations, we predict that a laboratory-accessible gate voltage can induce a hole effective mass that is 30 times la…
There has been a surge of recent interest in the role of anisotropy in interaction-induced phenomena in two-dimensional (2D) charged carrier systems. A fundamental question is how an anisotropy in the energy-band structure of the carriers at zero magnetic field affects the properties of the interacting particles at high fields, in particular of the composite fermions (CFs) and the fractional quantum Hall states (FQHSs). We demonstrate here tunable anisotropy for holes and hole-flux CFs confined to GaAs quantum wells, via applying \textit{in situ} in-plane strain and measuring their Fermi wavev…
The specifics of charge screening and electrostatic potential spatial distribution in multilayered graphene films placed in between charged substrates is theoretically analyzed. It is shown that by varying the areal charge densities on the substrates and/or the thickness of the graphene stack one may tune the doped carriers distribution over the system. When the charge densities on the substrates are weak, the carriers distribution and electrostatic potential profile agree with semimetallic properties of graphene. However, when the amount of the donated charge is sufficiently large the transit…
Recent experiments on twisted bilayer graphene (tBG) close to magic angle show that a small relative rotation in a van der Waals heterostructure greatly alters its electronic properties. We consider various scattering mechanisms and show that the carrier transport in tBG is dominated by a combination of charged impurities and acoustic gauge phonons. Charged impurities still dominate at low temperature and densities because of the inability of Dirac fermions to screen long-range Coulomb potentials at charge neutrality; however, the gauge phonons dominate for most of the experimental regime beca…
The mechanism of charge carrier interaction in twisted bilayer graphene (TBG) remains an unresolved problem, where some researchers proposed the dominance of the electron-phonon interaction, while the others showed evidence for electron-electron or electron-magnon interactions. Here we propose to resolve this problem by generalizing the Bloch-Grüneisen equation and using it for the analysis of the temperature dependent resistivity in TBG. It is a well-established theoretical result that the Bloch-Grüneisen equation power-law exponent, n, exhibits exact integer values for certain mechanisms. Fo…
We study the spin dynamics of carriers due to the Rashba interaction in semiconductor quantum disks and wells after excitation with light with orbital angular momentum. We find that although twisted light transfers orbital angular momentum to the excited carriers and the Rashba interaction conserves their total angular momentum, the resulting electronic spin dynamics is essentially the same for excitation with light with orbital angular momentum $l=+|l|$ and $l=-|l|$. The differences between cases with different values of $|l|$ are due to the excitation of states with slightly different energi…
We have studied the dielectric screening of electric field which is induced by a gate voltage in twisted double bilayer graphene by using a sample with a mismatch angle of about 5 degrees. In low temperature magnetotransport measurements, quantum oscillations of magnetoresistance originating from two bands with different carrier density were observed. The behavior of the carrier densities with respect to the total carrier density were distinct from that of the AB-stacked tetralayer graphene. The carrier density ratio was theoretically analyzed in terms of the model that the induced charge deca…
Two-Dimensional Twisted Ferromagnetic Domain Wall as a Spin-Wave Diffraction Grating
University of Missouri（密苏里大学）；Savannah State University（萨凡纳州立大学）；Korea Advanced Institute of Science and Technology（韩国科学技术院）；National University of Singapore（新加坡国立大学）
Near a magic twist angle, bilayer graphene transforms from a weakly correlated Fermi liquid to a strongly correlated two-dimensional electron system with properties that are extraordinarily sensitive to carrier density and to controllable environmental factors such as the proximity of nearby gates and twist-angle variation. Among other phenomena magic-angle twisted bilayer graphene hosts superconductivity, interaction induced insulating states, magnetism, electronic nematicity, linear-in-T low-temperature resistivity, and quantized anomalous Hall states. We highlight some key research results …
We report on a strongly coupled bilayer graphene (BLG) - \bise\ device with a junction resistance of less than 1.5 k$Ωμ$m$^2$. This device exhibits unique behavior at the interface, which cannot be attributed to either material in absence of the other. We observe quantum oscillations in the magnetoresistance of the junction, indicating the presence of well-resolved Landau levels due to hole carriers of unknown origin with a very large Fermi surface. These carriers, found only at the interface, could conceivably arise due to significant hole doping of the bilayer graphene with charge transfer o…
We develop a theory of electron tunneling accompanied by carrier-carrier scattering in graphene - insulator - graphene heterostructures. Due to the dynamic screening of Coulomb interaction, the scattering-aided tunneling is resonantly enhanced if the transferred energy and momentum correspond to those of surface plasmons. We reveal the possible experimental manifestations of such plasmon-assisted tunneling in current-voltage curves and plasmon emission spectra of graphene-based tunnel junctions. We find that inelastic current and plasmon emission rates have sharp peaks at voltages providing eq…
A device enabling mechanically-controlled spin and electric transport in mesoscopic structures is proposed. It is based on the transfer of electrons through weak links formed by suspended nanowires, on which the charge carriers experience a strong Rashba spin-orbit interaction that twists their spins. It is demonstrated that when the weak link bridges two magnetically-polarised electrodes, a significant spintro-voltaic effect takes place. Then, by monitoring the generated voltage one is able to measure electronic spins accumulated in the electrodes, induced e.g., by circularly-polarised light,…
The coexistence of Rashba and Dresselhaus spin-orbit interactions (SOIs) in semiconductor quantum wells leads to an anisotropic effective field coupled to carriers' spins. We demonstrate a gate-controlled anisotropy in Aharonov-Casher (AC) spin interferometry experiments with InGaAs mesoscopic rings by using an in-plane magnetic field as a probe. Supported by a perturbation-theory approach, we find that the Rashba SOI strength controls the AC resistance anisotropy via spin dynamic and geometric phases and establish ways to manipulate them by employing electric and magnetic tunings. Moreover, a…
Co$_2$MnGa is a ferromagnetic semimetal with Weyl nodal lines identified by ARPES. We studied electrical transport in thin Co$_2$MnGa lamellae (10 $\times$ 10 $\times$ 0.4-5 microns) cut from single-crystals using a focused ion beam. These crystals exhibit an unexpected and highly unusual planar resistance anisotropy ($\sim$10 times) with principal axes that rotate by 90 degrees between the upper and lower faces. Using symmetry arguments and simulations, we find that the observed resistance anisotropy resembles that of an isotropic conductor with anisotropic surface states that are impeded fro…
We report a combined nano-photocurrent and infrared nanoscopy study of twisted bilayer graphene (TBG) enabling access to the local electronic phenomena at length scales as short as 20 nm. We show that the photocurrent changes sign at carrier densities tracking the local superlattice density of states of TBG. We use this property to identify domains of varying local twist angle by local photo-thermoelectric effect. Consistent with the photocurrent study, infrared nano-imaging experiments reveal optical conductivity features dominated by twist-angle dependent interband transitions. Our results p…
Broken symmetries in graphene affect the massless nature of its charge carriers. We present an analysis of scattering by defects in graphene in the presence of spin-orbit interactions (SOIs). A characteristic constant ratio ($\simeq 2$) of the transport to elastic times for massless electrons signals the anisotropy of the scattering. We show that SOIs lead to a drastic decrease of this ratio, especially at low carrier concentrations, while the scattering becomes increasingly isotropic. As the strength of the SOI determines the energy (carrier concentration) where this drop is more evident, thi…
We report studies of the magnetoresistance (MR) in a two-dimensional electron system in (100) Si-inversion layers, for perpendicular and parallel orientations of the current with respect to the magnetic field in the 2D-plane. The magnetoresistance is almost isotropic; this result does not support the suggestion of the orbital origin of the MR in Si-inversion layer. In the hopping regime, however, the MR contains a weak anisotropic component that is non-monotonic in magnetic field. We found that the field, at which the MR saturates, for different samples varies by a factor of two, being lower o…
We report on theoretical and experimental study of the spin polarization recovery and Hanle effect for the charge carriers interacting with the fluctuating nuclear spins in the semiconductor structures. We start the theoretical description from the simplest model of static and isotropic nuclear spin fluctuations. Then we describe the modification of the polarization recovery and Hanle curves due to the anisotropy of the hyperfine interaction, finite nuclear spin correlation time, and the strong pulsed spin excitation. For the latter case, we describe the resonance spin amplification effect in …
The carrier mobility of anisotropic two-dimensional (2D) semiconductors under longitudinal acoustic (LA) phonon scattering was theoretically studied with the deformation potential theory. Based on Boltzmann equation with relaxation time approximation, an analytic formula of intrinsic anisotropic mobility was deduced, which shows that the influence of effective mass to the mobility anisotropy is larger than that of deformation potential constant and elastic modulus. Parameters were collected for various anisotropic 2D materials (black phosphorus, Hittorf's phosphorus, BC$_2$N, MXene, TiS$_3$, G…
According to electronic structure theory, bilayer graphene is expected to have anomalous electronic properties when it has long-period moiré patterns produced by small misalignments between its individual layer honeycomb lattices. We have realized bilayer graphene moiré crystals with accurately controlled twist angles smaller than 1 degree and studied their properties using scanning probe microscopy and electron transport. We observe conductivity minima at charge neutrality, satellite gaps that appear at anomalous carrier densities for twist angles smaller than 1 degree, and tunneling densitie…
We report an experimental study of carrier density (n), displacement field (D) and twist angle (θ) dependence of temperature (T)-linear resistivity in twisted double bilayer graphene (TDBG). For a large twist angle (θ>1.5°) where correlated insulating states are absent, we observe a T-linear resistivity (with the slope of the order ~10Ω/K) over a wide range of carrier density and its slope decreases with increasing of n, in agreement with acoustic phonon scattering model semi-quantitatively. The slope of T-linear resistivity is non-monotonically dependent on the displacement field with a singl…
We investigate the twist angle dependence of spin-orbit coupling (SOC) proximity effects and charge-to-spin conversion (CSC) in graphene/WSe$_2$ heterostructures from first principles. The CSC is shown to strongly depend on the twist angle, with both the spin Hall and standard Rashba-Edelstein efficiencies optimized at or near 30° twisting. Symmetry breaking due to twisting also gives rise to an unconventional Rashba-Edelstein effect, with electrically generated non-equilibrium spin densities possessing spins collinear to the applied electric field. We further discuss how the carrier doping co…
The advent of Moiré materials has galvanized interest in the nature of charge carriers in topological bands. In contrast to conventional materials where charge carriers are electron-like quasiparticles, topological bands allow for more exotic possibilities where charge is carried by nontrivial topological textures, such as skyrmions. However, the real space description of skyrmions is ill-suited to address the limit of small or `baby' skyrmions which consist of an electron and a few spin flips. Here, we study the formation of the smallest skyrmions -- spin polarons, formed as bound states of a…
We consider the electronic structure of a slightly twisted graphene bilayer and show the coexistence of van Hove singularities (VHSs) and superlattice Dirac points in a continuum approximation. The graphene-on-graphene moiré pattern gives rise to a periodic electronic potential, which leads to the emergence of the superlattice Dirac points due to the chiral nature of the charge carriers. Owning to the distinguishing real and reciprocal structures, the sublattice exchange even and odd structures of the twisted graphene bilayer (the two types of commensurate structures) result in two different s…
Polarization characteristic of ultrafast carrier dynamics in multi-layer CVD-grown graphene is probed with tilted beams (with respected to the graphene plane). The graphene ultrafast carrier dynamics measurement greatly depends on both polarization (i.e., orientation of linear polarization) and wave vector of probe beam. The differential reflectivity ΔR=R signal of picosecond dynamics could be continuously altered from positive to negative by changing the probe polarization from P to S when the dynamics is probed by a total internal reflected beam. The polarization dependent ΔR=R signal around…
We introduce a new method to continuously map inhomogeneities of a moiré lattice and apply it to large-area topographic images we measure on open-device twisted bilayer graphene (TBG). We show that the variation in the twist angle of a TBG device, which is frequently conjectured to be the reason for differences between devices with a supposed similar twist angle, is about 0.08° around the average of 2.02° over areas of several hundred nm, comparable to devices encapsulated between hBN slabs. We distinguish between an effective twist angle and local anisotropy and relate the latter to heterostr…
