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arXiv 1111.0411cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-sci
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扭曲石墨烯双层膜的单层行为和慢载流子密度动力学

Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer

Lan Meng, Yanfeng Zhang, Wei Yan, Lei Feng, Lin He, Rui-Fen Dou, Jia-Cai Nie

摘要:

我们报道了SiC衬底上扭曲石墨烯双层的扫描隧道显微镜(STM)和光谱(STS)。对于扭转角~ 4.5 °,由于石墨烯/SiC界面处的电子掺杂,狄拉克点ED位于费米能级EF以下约0.40 eV。我们观察到了一个意想不到的结果,在STS测量过程中(时间尺度约为100秒),纳米尺度缺陷周围的局部狄拉克点向费米能移动。这种现象是由于在测量过程中扭曲的石墨烯和衬底之间的去耦,这同时降低了石墨烯的载流子密度。

英文摘要:

We report scanning tunneling microscopy (STM) and spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ~ 4.5o the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron doping at the graphene/SiC interface. We observed an unexpected result that the local Dirac point around a nanoscaled defect shifts towards the Fermi energy during the STS measurements (with a time scale about 100 seconds). This behavior was attributed to the decoupling between the twisted graphene and the substrate during the measurements, which lowers the carrier density of graphene simultaneously.

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