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arXiv 2005.13054cond-mat.mes-hallcond-mat.str-el
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Electronic localization in twisted bilayer MoS$_2$ with small rotation angle

Somepalli Venkateswarlu, Andreas Honecker, Guy Trambly de Laissardière

英文摘要:

Moiré patterns are known to confine electronic states in transition metal dichalcogenide bilayers, thus generalizing the notion of magic angles discovered in twisted bilayer graphene to semiconductors. Here, we present a revised Slater-Koster tight-binding model that facilitates the first reliable and systematic studies of such states in twisted bilayer MoS$_2$ for the whole range of rotation angles $θ$. We show that isolated bands appear at low energy for $θ\lesssim 5 - 6^\circ$. Moreover, these bands become "flatbands", characterized by a vanishing average velocity, for the smallest angles $θ\lesssim 2^\circ$.

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