Frequency-independent terahertz anomalous Hall effect in DyCo$_{5}$, Co$_{32}$Fe$_{68}$ and Gd$_{27}$Fe$_{73}$ thin films from DC to 40 THz
Tom S. Seifert, Ulrike Martens, Florin Radu, Mirkow Ribow, Marco Berritta, Lukas Nádvorník, Ronald Starke, Tomas Jungwirth, Martin Wolf, Ilie Radu, Markus Münze… 展开作者
Tom S. Seifert, Ulrike Martens, Florin Radu, Mirkow Ribow, Marco Berritta, Lukas Nádvorník, Ronald Starke, Tomas Jungwirth, Martin Wolf, Ilie Radu, Markus Münzenberg, Peter M. Oppeneer, Georg Woltersdorf, Tobias Kampfrath
The anomalous Hall effect (AHE) is a fundamental spintronic charge-to-charge-current conversion phenomenon and closely related to spin-to-charge-current conversion by the spin Hall effect. Future high-speed spintronic devices will crucially rely on such conversion effects at terahertz (THz) frequencies. Here, we reveal that the AHE remains operative from DC up to 40 THz with a flat frequency response in thin films of three technologically relevant magnetic materials: DyCo$_{5}$, Co$_{32}$Fe$_{68}$ and Gd$_{27}$Fe$_{73}$. We measure the frequency-dependent conductivity-tensor elements $σ_{xx}$ and $σ_{yx}$ and find good agreement with DC measurements. Our experimental findings are fully consistent with ab-initio calculations of $σ_{yx}$ for CoFe and highlight the role of the large Drude scattering rate (~100 THz) of metal thin films, which smears out any sharp spectral features of the THz AHE. Finally, we find that the intrinsic contribution to the THz AHE dominates over the extrinsic mechanisms for the Co$_{32}$Fe$_{68}$ sample. The results imply that the AHE and related effects such as the spin Hall effect are highly promising ingredients of future THz spintronic devices reliably operating from DC to 40 THz and beyond.
We report a highly efficient tunable THz reflector in graphene. By applying a small gate voltage (up to 3 V), the reflectance of graphene is modulated from a minimum of 0.79% to a maximum of 33.4% using graphene/ionic liquid structures at room temperature, and the reflection tuning is uniform within a wide spectral range (0.1 - 1.5 THz). Our observation is explained by the Drude model, which describes the THz wave-induced intraband transition in graphene. This tunable reflectance of graphene may contribute to broadband THz mirrors, deformable THz mirrors, variable THz beam splitters and other …
Terahertz (THz) lasers on optically pumped multiple-graphene-layer (MGL) structures as their active region are proposed and evaluated. The developed device model accounts for the interband and intraband transitions in the degenerate electron-hole plasma generated by optical radiation in the MGL structure and the losses in the slot or dielectric waveguide. The THz laser gain and the conditions of THz lasing are found. It is shown that the lasers under consideration can operate at frequencies > 1 THz at room temperatures.
External electric fields are highly attractive for dynamical manipulation of excitons in two-dimensional materials. Here, we theoretically study the ionization of excitons in monolayer transition metal dichalcogenides (TMDs) by intense pulsed electric fields in the terahertz (THz) regime. We find that THz pulses with realistic field strengths are capable of ionizing a significant fraction of photogenerated excitons in TMDs into free charge carriers. Short THz pulses are therefore an efficient, non-invasive method of dynamically controlling the free carrier concentration in monolayer TMDs, whic…
We report a terahertz optical modulator consisting of randomly stacked trilayer graphene (TLG) deposited on an oxidized silicon substrate by means of THz- Time Domain Spectroscopy (THz-TDS). Here, the gate tuning of the Fermi level of the TLG provides the fundamental basis for the modulation of THz transmission. We measured a 15% change in the THz transmission of this device over a broad frequency range (0.6-1.6THz). We also observed a strong absorption >80% in the time-domain signals and a frequency independence of the conductivity. Furthermore, unlike previous studies, we find that the under…
We report first evidence for a 1.0 terahertz (THz) self-starting mirrorless acoustic phonon parametric oscillator (MAPPO) produced from acousto-optic phase-conjugate degenerate four-wave (D4WM) mixing in a THz laser-pumped silicon doping superlattice (DSL). The DSL was grown by molecular beam epitaxy on a (100) boron-doped silicon substrate. A superconducting NbTiN subwavelength grating was used to couple the THz laser radiation into the DSL. Superconducting granular aluminum bolometric detection, coupled with Si:B piezophonon spectroscopy, revealed excitation of THz coherent compressional and…
Terahertz time domain spectroscopy has been used to study low frequency confined acoustic phonons of silver nanoparticles embedded in poly(vinyl alcohol) matrix in the spectral range of 0.1 to 2.5 THz. The real and imaginary parts of the dielectric function show two bands at 0.60 THz and 2.12 THz attributed to the spheroidal and toroidal modes of silver nanoparticles, thus demonstrating the usefulness of terahertz time domain spectroscopy as a complementary technique to Raman spectroscopy in characterizing the nanoparticles.
We report experimental observation of electrically-tunable coherent perfect absorption (CPA) of terahertz (THz) radiation in graphene. We develop a reflection-type tunable THz cavity formed by a large-area graphene layer, a metallic reflective electrode and an electrolytic medium in between. Ionic gating in the THz cavity allows us to tune the Fermi energy of graphene up to 1eV and to achieve critical coupling condition at 2.8 THz with absorption of 99%. With the enhanced THz absorption, we were able to measure the Fermi energy dependence of the transport scattering time of highly doped graphe…
We detected broadband coherent terahertz (THz) emission from multiferroic BiFeO3 after illuminating a high-quality bulk single ferroelectric domain crystal with a ~100 fs optical pulse. The dependence of the emitted THz waveform on the energy and polarization of the optical pulse is consistent with the optical rectification mechanism of THz emission. The THz emission provides a sensitive probe of the electric polarization state of BiFeO3, enabling applications in ferroelectric memories and ferroelectric domain imaging. We also report room-temperature THz optical constants of BiFeO3.
We report the Terahertz optical properties of the Vanadium doped [100] \b{eta}-Ga2O3 using Terahertz Time-Domain Spectroscopy (THz-TDS). The V-doped \b{eta}-Ga2O3 crystal shows strong birefringence in the 0.2-2.4 THz range. Further, phase retardation by the V-doped \b{eta}-Ga2O3 has been measured over the whole THz range by Terahertz Time-Domain Polarimetry (THz-TDP). It is observed that the V-doped \b{eta}-Ga2O3 crystal behaves both as a quarter waveplate (QWP) at 0.38, 1.08, 1.71, 2.28 THz, and a half waveplate (HWP) at 0.74 and 1.94 THz, respectively.
The transition frequency between nonthermal coherent magnetic precessions and ultrafast demagnetization is arguably the most sought after answer in magnetism science and technology nowadays. So far, it is believed to be in the terahertz (THz) range. Here, using an ultra-intense low frequency THz bullet, and thin magnetic layers, we report on experimental evidences that fully coherent nonthermal THz magnetic switching may never be reachable in conventional ferromagnetic thin films. At high excitation intensities, while the spins still coherently precess with the THz magnetic field, the deposite…
The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements, coupled with Monte Carlo simulations of THz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoexcited electrons was determined via optical-pump THz-probe spectroscopy, and was found to double after passivation. These experiments demonstrate that passivation significantly reduces the surface state…
Novel mechanisms for electromagnetic wave emission in the terahertz (THz) frequency regime emerging at the nanometer scale have recently attracted intense attention for the purpose of searching next-generation broadband THz emitters. Here, we report a new mechanism for broadband THz emission, utilizing the interface inverse Rashba-Edelstein effect. By engineering the symmetry of the Ag/Bi Rashba interface, we demonstrate a controllable THz radiation (~0.1-5 THz) waveform emitted from metallic Fe/Ag/Bi heterostructures following photo-excitation. We further reveal that this type of THz radiatio…
The anisotropic effective mass of electrons is directly measured using time-resolved THz- pump/THz-probe techniques in a n-doped InGaAs semiconductor thin film. A microscopic theory is used to attribute this anisotropy in the THz probe transmission to the nonparabolicity of the conduction band. Self-consistent light-matter coupling is shown to contribute significantly to the THz response.
Although the sensitivity of THz spectra to the crystal form of the sample being analysed makes it an ideal tool for differentiating polymorphic forms of crystalline materials, the lack of adequate knowledge about the THz response to various materials often results in misinterpretations. The inclusion of structural information in THz spectral databases of crystalline substances is therefore suggested.
We experimentally observe the fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an epitaxial graphene-on-Si heterostructure under pumping with a 1550-nm, 80-fs pulsed fiber laser beam and probing with the corresponding terahertz (THz) beam generated by and synchronized with the pumping laser. The time-resolved electric-field intensity originating from the coherent terahertz photon emission is electro-optically sampled in total-reflection geometry. The Fourier spectrum from 1.8 to 5.2 THz agrees well the pumping photon spectrum. This result is attri…
We report on terahertz (THz) radiation under electrical pumping from a degenerate semiconductor possessing an electron accumulation layer. In InN, the random grating formed by topographical defects provides high-efficiency coupling of surface plasmon polaritons supported by the accumulation layer to the THz emission. The principal emission band occupies the 2-6 THz spectral range. We establish a link between the shape of emission spectra and the structural factor of the random grating and show that the change of slope of power dependencies is characteristic for temperature-dependent plasmonic …
A detailed theoretical study is presented for the influence of linearly polarised intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for 1s and 2p states on intensity and frequency of the THz radiation has been examined.
We demonstrate terahertz (THz) imaging and spectroscopy of a 15x15-mm^2 single-layer graphene film on Si using broadband THz pulses. The THz images clearly map out the THz carrier dynamics of the graphene-on-Si sample, allowing us to measure sheet conductivity with sub-mm resolution without fabricating electrodes. The THz carrier dynamics are dominated by intraband transitions and the THz-induced electron motion is characterized by a flat spectral response. A theoretical analysis based on the Fresnel coefficients for a metallic thin film shows that the local sheet conductivity varies across th…
Terahertz (THz) radiation has been observed from multiferroic BiFeO$_3$ thin films via ultrafast modulation of spontaneous polarization upon carrier excitation with illumination of femtosecond laser pulses. The radiated THz pulses from BiFeO$_3$ thin films were clarified to directly reflect the spontaneous polarization state, giving rise to a memory effect in a unique style and enabling THz radiation even at zero-bias electric field. On the basis of our findings, we demonstrate potential approaches to ferroelectric nonvolatile random access memory with nondestructive readability and ferroelect…
We demonstrate that polymer composites with a low loading of graphene, below 1.2 wt. %, are efficient as electromagnetic absorbers in the THz frequency range. The epoxy-based graphene composites were tested at frequencies from 0.25 THz to 4 THz, revealing total shielding effectiveness of 85 dB (1 mm thickness) with graphene loading of 1.2 wt. % at the frequency f=1.6 THz. The THz radiation is mostly blocked by absorption rather than reflection. The efficiency of the THz radiation shielding by the lightweight, electrically insulating composites, increases with increasing frequency. Our results …
We compare the observed strong saturation of the free carrier absorption in n-type semiconductors at 300 K in the terahertz frequency range when single-cycle pulses with intensities up to 150 MW/cm2 are used. In the case of germanium, a small increase of the absorption occurs at intermediate THz pulse energies. The recovery of the free carrier absorption was monitored by time-resolved THz-pump/THz-probe measurements. At short probe delay times, the frequency response of germanium cannot be fitted by the Drude model. We attribute these unique phenomena of Ge to dynamical overpopulation of the h…
Terahertz (THz) radiation is a powerful tool with widespread applications ranging from imaging, sensing, and broadband communications to spectroscopy and nonlinear control of materials. Future progress in THz technology depends on the development of efficient, structurally simple THz emitters that can be implemented in advanced miniaturized devices. Here we show how the natural electronic anisotropy of layered conducting transition metal oxides enables the generation of intense terahertz radiation via the transverse thermoelectric effect. In thin films grown on offcut substrates, femtosecond l…
Electrically tuneable high mobility charges on graphene yield an efficient electro-optical platform to control and manipulate terahertz (THz) waves. Real-world applications require a multiplex THz device with efficient modulation over a large active area. The trade-off between the efficient gating and switching speed, however, hinders the realization of these applications. Here, we demonstrate a large-format 256-pixel THz modulator which provides high-frame-rate reconfigurable transmission patterns. The time-domain and frequency-domain THz characterizations of graphene devices reveal the relax…
This work focuses on the fabrication and use of a Biological Micro-ElectroMechanical System (BioMEMS) for TeraHertz (THz) detection and characterization of enzymatic catalysis reactions. The fluidic microdevice was fabricated using traditional lithographic techniques. It was then functionalized by reactive amine functions using plasma polymerized allylamine (pp-allylamine), followed by enzyme immobilization inside the microchannels. The enzymatic reaction was controlled by fluorescent microscopy before being analysed by sub-THz spectroscopy in the frequency range 0.06--0.11 THz. The preliminar…
We characterize the terahertz (THz) generation of N-benzyl-2-methyl-4-nitroaniline (BNA), with crystals ranging in thickness from 123-700 μm. We compare excitation using 800-nm and 1250 to 1500-nm wavelengths. Pumping BNA with 800-nm wavelengths and longer near-infrared wavelengths results in a broad spectrum, producing out to 6 THz using a 100-fs pump, provided the BNA crystal is thin enough. ~200 μm or thinner crystals are required to produce a broad spectrum with an 800-nm pump, whereas ~300 μm thick crystals are optimal for broadband THz generation using the longer wavelengths. We report t…
We demonstrate the self-phase modulation (SPM) of a single-cycle THz pulse in a semiconductor, using bulk n-GaAs as a model system. The SPM arises from the heating of free electrons in the electric field of the THz pulse, leading to an ultrafast reduction of the plasma frequency, and hence to a strong modification of the THz-range dielectric function of the material. THz SPM is observed directly in the time domain. In the frequency domain it corresponds to a strong frequency-dependent refractive index nonlinearity of n-GaAs, found to be both positive and negative within the broad THz pulse spe…
In modern terahertz (THz) sensing and imaging spectroscopy, water is considered a nemesis to be avoided due to strong absorption in the THz frequency range. Here we report the first experimental demonstration and theoretical implications of using femtosecond laser pulses to generate intense broadband THz emission from water vapor. When we focused an intense laser pulse in water vapor contained in a gas cell or injected from a gas jet nozzle, an extraordinarily strong THz field from optically excited water vapor is observed. Water vapor has more than 50% greater THz generation efficiency than d…
