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arXiv 1804.04765cond-mat.mtrl-sci
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利用界面逆Rashba-Edelstein效应产生宽带太赫兹波

Broadband terahertz generation via the interface inverse Rashba-Edelstein effect

C. Zhou, Y. P. Liu, Z. Wang, S. J. Ma, M. W. Jia, R. Q. Wu, L. Zhou, W. Zhang, M. K. Liu, Y. Z. Wu, J. Qi

摘要:

近年来,纳米尺度上出现的太赫兹(THz)频段电磁波发射新机制引起了人们的广泛关注,以寻找下一代宽带THz发射器。在这里,我们报告了一种新的机制,宽带太赫兹发射,利用界面逆Rashba-Edelstein效应。通过设计Ag/Bi Rashba界面的对称性,我们展示了在光激发后从金属Fe/Ag/Bi异质结构发射的可控THz辐射(~0.1-5 THz)波形。我们进一步揭示,这种类型的太赫兹辐射可以选择性地叠加在最近发现的发射由于逆自旋霍尔效应,产生一个独特的膜厚度依赖的发射模式。因此,我们的研究结果提供了新的机会,多功能的宽带太赫兹辐射使用的界面量子效应。

英文摘要:

Novel mechanisms for electromagnetic wave emission in the terahertz (THz) frequency regime emerging at the nanometer scale have recently attracted intense attention for the purpose of searching next-generation broadband THz emitters. Here, we report a new mechanism for broadband THz emission, utilizing the interface inverse Rashba-Edelstein effect. By engineering the symmetry of the Ag/Bi Rashba interface, we demonstrate a controllable THz radiation (~0.1-5 THz) waveform emitted from metallic Fe/Ag/Bi heterostructures following photo-excitation. We further reveal that this type of THz radiation can be selectively superimposed on the emission discovered recently due to the inverse Spin Hall effect, yielding a unique film thickness dependent emission pattern. Our results thus offer new opportunities for versatile broadband THz radiation using the interface quantum effects.

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