Rhombohedral B$_{12}$ unit is viewed as a host matrix embedding linear tri-atomic arrangements of elements (E) resulting in a relatively large family of boron-rich compounds with B$_{12}${E-E-E} generic formulation. The present work focuses on boron subnitride, B$_{13}$N$_2$ that we express in present context as B$_{12}${N-B-N}. Within well established quantum density functional theory (DFT) a full study of its electronic properties is provided. Also linear triatomic arrangements in view of the existence in simple compounds such as sodium azide NaN$_3$, i.e., Na$^I${N-N-N} and calcium cyanamide, Ca$^{II}${N-C-N}, we devised Sc$^{III}${N-B-N} to establish comparison with B$_{12}${N-B-N}. ScBN$_2$ is calculated to be cohesive and possessing N-B-N isolated from ScIII with dB-N = 1.33 Å. In B$_{12}${N-B-N} an elongated dB-N=1.43 Å is identified due to the bonding of N with one of the two B12 boron substructures, B1 with the formation of "3B...N-B-N...3B"-like complex accompanied by a magnetic instability. Spin polarized (SP) calculations led to the onset of magnetization on central boron with M=1 $μ_B$ in a stable half-ferromagnetic ground state observed from the electronic density of states (DOS). The results are backed with total energy and calculations in both non-spin-polarized (NSP) and spin-polarized stabilizing the latter configuration over a broad range of volumes from M(V) plots. Further illustrative results are given with the charge densities (total and magnetic) and electron localization function (ELF).
The lattice parameters of two boron subnitrides, B13N2 and B50N2, have been measured as a function of temperature between 298 and 1273 K, and the corresponding thermal expansion coefficients have been determined. Thermal expansion of both boron subnitrides was found to be quasi-linear, and the volume thermal expansion coefficients of B50N2 (15.7(2) 10-6 K-1) and B13N2 (21.3(2) 10-6 K-1) are of the same order of magnitude as those of boron-rich compounds with structure related to α-rhombohedral boron. For both boron subnitrides no temperature-induced phase transitions have been observed in the …
Microstructure and mechanical properties of bulk polycristalline rhombohedral boron subnitride B13N2 synthesized by crystallization from the B-BN melt at 7 GPa have been systematically studied by micro- and nanoindentation, atomic force microscopy and scanning electron microscopy. The obtained data on hardness, elastic properties and fracture toughness clearly indicate that B13N2 belongs to a family of superhard phases and can be considered as a promising superabrasive or binder for cubic boron nitride.
Melting of rhombohedral boron subnitride B13N2 has been studied in situ at pressures to 8 GPa using synchrotron X-ray diffraction and electrical resistivity measurements. It has been found that above 2.6 GPa B13N2 melts incongruently, and the melting curve exhibits positive slope of 31(3) K/GPa that points to a lower density of the melt as compared to the solid phase.
New boron subnitride B50N2 has been synthesized by crystallization from the B-BN melt at 5 GPa, and its structure has been refined using Rietveld analysis. B50N2 crystallizes in the tetragonal space group P-4n2 with unit cell parameters a = 8.8181(2) A and c = 5.0427(10) A. Quasi-hydrostatic compression of two boron subnitrides, B50N2 and B13N2, has been studied to 30 GPa at room temperature in a diamond-anvil cell using synchrotron X-ray diffraction. No pressure-induced phase transitions have been observed. A fit of experimental p-V data to the Murnaghan equation of state yielded B50N2 and B1…
Noting the structural relationships between phases of carbon and boron carbide with phases of boron nitride and boron subnitride, we investigate their mutual solubilities using a combination of first principles total energies supplemented with statistical mechanics to address finite temperatures. Owing to large energy costs of substitution, we find the mutual solubilities of the ultra hard materials diamond and cubic boron nitride are negligible, and the same for the quasi-two dimensional materials graphite and hexagonal boron nitride. In contrast, we find a continuous range of solubility conn…
We present a new class of boron sheets, composed of triangular and hexagonal motifs, that are more stable than structures considered to date and thus are likely to be the precursors of boron nanotubes. We describe a simple and clear picture of electronic bonding in boron sheets and highlight the importance of three-center bonding and its competition with two-center bonding, which can also explain the stability of recently discovered boron fullerenes. Our findings call for reconsideration of the literature on boron sheets, nanotubes, and clusters.
A scientific discussion was recently raised on the interpretation of chemical bonding in the high pressure structure of Boron. Some remarks are given in this short commentary
Bonding characteristics of liquid boron at 2500K are studied by using high resolution Compton scattering. An excellent agreement is found between the measurements and the corresponding Car-Parinello molecular dynamics simulations. Covalent bond pairs are clearly shown to dominate in liquid boron along with the coexistence of diffuse pairs. Our study reveals the complex bonding pattern of liquid boron, and gives insight into the unusual properties of this high temperature liquid.
We used the binding energy-bond-charge model to study the atomic bonding and electrical properties of the two-dimensional graphene/BN van der Waals heterostructure. We manipulated its atomic bonding and electrical properties by manufacturing defects. We discovered that this process yielded a band structure with a flat band, i.e., a horizontal band structure without dispersion at the Fermi level. Thus, our research is significant because it is the first report on this flat band of defect graphene/BN van der Waals heterostructures.
The complex crystal chemistry of elemental boron has led to numerous proposed structures with distinctive motifs as well as contradictory findings. Herein, evolutionary structure searches performed at 100 GPa have uncovered a series of potential new metastable phases of boron, and bonding analyses were carried out to elucidate their electronic structure. These polymorphs, dynamically stable at 100 GPa, were grouped into two families. The first was derived from the thermodynamic minimum at these conditions, $α$-Ga, whereas channels comprised the second. Two additional intergrowth structures wer…
The accurate charge density of MgB2 was observed at room temperature(R.T.) and 15K by the MEM(Maximum Entropy Method)/Rietveld analysis using synchrotron radiation powder data. The obtained charge density clearly revealed the covalent bonding feature of boron forming the 2D honeycomb network in the basal plane, on the other hand, Mg is found to be in divalent state. A subtle but clear charge concentration was found on boron 2D sheets at 15K, which should be relating to superconductivity.
Considering rhombohedral alpha-boron, rh-B12 as a matrix hosting interstitials particularly triatomic linear ones as in B12C3 better known as B4C, the subnitride B12N3 is proposed herein. The N3 triatomic linear alignment labeled N2-N1-N2 resembles that found in the ionic sodium azide NaN3 characterized by a very short d(N1-N2)= 1.16 A. Within DFT-based calculations B12N3 is found more cohesive than pristine B12 with larger inter-nitrogen separation of d(N1-N2)= 1.38 A}. The N1-N2 elongation is explained from the bonding of the two terminal N2 with one of the two B12 boron substructures formin…
A symmetry analysis of the valence shell in the boron buckyball B80, shows a perfect match with the symmetry of the valence shell in C60 .The cap atoms participate in the bonding by 30 orbitals which transform as the sigma bonds along the 6-6 edges. Far reaching consequences for chemical and physical properties of B80, which until now only exists in silico, are expected.
We study the effect of electron doping on the bonding character and stability of two-dimensional (2D) structures of elemental boron, called borophene, which is known to form many stable allotropes. Our {\em ab initio} calculations for the neutral system reveal previously unknown stable 2D $ε$-B and $ω$-B structures. We find that the chemical bonding characteristic in this and other boron structures is strongly affected by extra charge. Beyond a critical degree of electron doping, the most stable allotrope changes from $ε$-B to a buckled honeycomb structure. Additional electron doping, mimickin…
When single-layer h-BN is subjected to a high-energy electron beam, triangular pores with nitrogen edges are formed. Because of the broken sp2 bonds, these pores are known to possess magnetic states. We report on the magnetism and electronic structure of triangular pores as a function of their size. Moreover, in the Bernal-stacked h-BN (AB-h-BN), multilayer pores with parallel edges can be created, which is not possible in the commonly fabricated multilayer AA'-h-BN. Given that these pores can be manufactured in a well-controlled fashion using an electron beam, it is important to understand th…
The icosahedra boron chain and three icosahedra sheets (with α, δ4, and δ6 symmetries), constructed by the icosahedra B12, have been obtained as new members of boron family using a highly efficient molecular dynamics scheme based on a transferable and reliable semi-empirical Hamiltonian. The icosahedral B12 in the icosahedra chain is slightly elongated along the china direction and directly bonded each other with the two-center covalent bonds. A deformation of the icosahedra B12 was also found in the two-dimensional icosahedra sheets. In addition to the three-center bonding nature inside the i…
Recent discoveries of supposedly pure alpha-tetragonal boron require to revisit its structure. The system is also interesting with respect to a new type of geometrical frustration in elemental crystals, which was found in beta-rhombohedral boron. Based on density functional theory calculations, the present study has resolved the structural and thermodynamic characteristics of pure alpha-tetragonal boron. Different from beta-rhombohedral boron, the conditions for stable covalent bonding (a band gap and completely filled valence bands) are almost fulfilled at a composition B_52 with two 4c inter…
Boron is a unique element, being the only element, all known polymorphs of which are superhard, and all of its crystal structures are distinct from any other element. The electron-deficient bonding in boron explains its remarkable sensitivity to even small concentrations of impurity atoms and allows boron to form peculiar chemical compounds with very different elements. These complications made the study of boron a great challenge, creating also a unique and instructive chapter in the history of science. Strange though it may sound, the discovery of boron in 1808 was ambiguous, with pure boron…
Structural, Energetic, Electronic, and Vibrational Properties of Boron-Substituted Tungsten Clusters
University of Mumbai（孟买大学）；Chikitsak Samuha’s Sir Satam and Lady Shantabai Patkar College of Arts and Science（Chikitsak Samuha's Sir Satam 和 Lady Shantabai Patkar 文理学院）；V.P. Varde College of Commerce and Economics（V.P. Varde 商业与经济学院）
By electron and X-ray diffraction we establish that the CrB$_4$ compound discovered over 40 years ago crystallizes in the $oP10$ (\emph{Pnnm}) structure, in disagreement with previous experiments but in agreement with a recent first-principles prediction. The 3D boron network in the new structure is a distorted version of the rigid carbon $sp^3$ network proposed recently for the high-pressure C$_4$ allotrope. According to our density functional theory calculations and the analysis of the bonding, CrB$_4$ is a potentially superhard material. In fact, the calculated weakest shear and tensile str…
Isolated hydrogen and hydrogen pairs in bulk diamond matrix have been studied using density functional theory calculations. The electronic structure and stability of isolated and paired hydrogen defects are investigated at different possible lattice sites in pure diamond and boron doped diamond. Calculations revealed that isolated hydrogen defect is stable at bond center sites for pure diamond and bond center puckered site for boron doped diamond. In case of hydrogen pairs, H2 defect (one hydrogen at bond center and second at anti-bonding site) is stable for pure diamond, while for boron doped…
Engineering atomic-scale structures allows great manipulation of physical properties and chemical processes for advanced technology. We show that the B atoms deployed at the centers of honeycombs in boron sheets, borophene, behave as nearly perfect electron donors for filling the graphitic $σ$ bonding states without forming additional in-plane bonds by first-principles calculations. The dilute electron density distribution owing to the weak bonding surrounding the center atoms provides easier atomic-scale engineering and is highly tunable via in-plane strain, promising for practical applicatio…
We report on the detection and charge distribution analysis for nitrogen substitutional dopants in single layer graphene membranes by aberration-corrected high-resolution transmission electron microscopy (HRTEM). Further, we show that the ionicity of single-layer hexagonal boron nitride can be confirmed from direct images. For the first time, we demonstrate by a combination of HRTEM experiments and first-principles electronic structure calculations that adjustments to the atomic potentials due to chemical bonding can be discerned in HRTEM images. Our experiments open a way to discern electroni…
We compute the electronic band structure and optical properties of boron arsenide using the relativistic quasiparticle self-consistent $GW$ approach, including electron-hole interactions through solution of the Bethe-Salpeter equation. We also calculate its electronic and optical properties using standard and hybrid density functional theory. We demonstrate that the inclusion of self-consistency and vertex corrections provides substantial improvement in the calculated band features, in particular when comparing our results to previous calculations using the single-shot $GW$ approach and variou…
The doping of graphene to tune its electronic structure is essential for its further use in carbon based electronics. Adapting strategies from classical silicon based semiconductor technology, we use the incorporation of heteroatoms in the 2D graphene network as a straightforward way to achieve this goal. Here, we report on the synthesis of boron-doped graphene on Ni(111) in a chemical vapor deposition process of triethylborane on the one hand and by segregation of boron from the bulk on the other hand. The chemical environment of boron was determined by x-ray photoelectron spectroscopy and an…
We present a first-principles description of anisotropic materials characterized by having both weak (dispersion-like) and strong covalent bonds, based on the Adiabatic--Connection Fluctuation--Dissipation Theorem within Density Functional Theory. For hexagonal boron nitride the in-plane and out of plane bonding as well as vibrational dynamics are well described both at equilibrium and when the layers are pulled apart. Also bonding in covalent and ionic solids is described. The formalism allows to ping-down the deficiencies of common exchange-correlation functionals and provides insight toward…
Fabrication of ordered structures at the nanoscale limit poses a cornerstone challenge for modern technologies. In this work we show how naturally occurring moiré patterns in Ir(111)-supported graphene template the formation of 2D ordered arrays of substitutional boron species. A complementary experimental and theoretical approach provides a comprehensive description of the boron species distribution, bonding configurations, interfacial interaction with Ir(111) and the impact on graphene's electronic structure. Atomically-resolved scanning tunnelling microscopy images and density functional th…
Ab initio calculations within the density-functional theory formalism are performed to investigate the chemical functionalization of a graphene-like monolayer of silicon - silicene - with B, N, Al or P atoms. The structural, electronic, magnetic and vibrational properties are reported. The most preferable adsorption sites are found to be valley, bridge, valley and hill site for B, N, Al and P adatoms, respectively. All the relaxed systems with adsorbed/substituted atoms exhibit metallic behaviour with strongly bonded B, N, Al, and P atoms accompanied by an appreciable electron transfer from si…
Ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma possess a marked structural feature of diamond grains embedded in an amorphous carbon and a hydrogenated amorphous carbon matrix which are the largest constituents of the films. Since the amorphous nature yields much larger light absorption coefficients as well as a generation source of photo-induced carriers with UV rays, these films can be potential candidates for deep-UV photodetector applications. From some previous studies p-type conduction of the films has been realized by d…
Usually the ions of a particular element in solids are in positive or negative oxidation states, depending upon the chemical environment. It is highly unusual for an atom having both positive as well as negative oxidation states simultaneously within the same structural framework in a particular compound. Our structural and chemical bonding analyses show that the hydrogen ions in the transition metal ammine borohydrides (TMABHs) with the chemical formula M(BH4)2(NH3)2 (M = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn) have both positive and negative oxidation states. Our detailed analyses confirm …
γ-B28 is a recently established high-pressure phase of boron. Its structure consists of icosahedral B12 clusters and B2 dumbbells in a NaCl-type arrangement (B2)δ+(B12)δ- and displays a significant charge transfer δ~0.5- 0.6. The discovery of this phase proved essential for the understanding and construction of the phase diagram of boron. γ-B28 was first experimentally obtained as a pure boron allotrope in early 2004 and its structure was discovered in 2006. This paper reviews recent results and in particular deals with the contentious issues related to the equation of state, hardness, putativ…
Boron nitride structures have excellent thermal and chemical stabilities. Based on state-of-art theoretical calculations, we propose a wide gap semiconducting BN crystal with a three-dimensional hyperhoneycomb structure (Hp-BN), which is both mechanically and thermodynamically stable. Our calculated results show that Hp-BN has a higher bulk modulus and a smaller energy gap as compared to c-BN. Moreover, due to the unique bonding structure, Hp-BN exhibits anisotropic electronic and optical properties. It has great adsorption in the ultraviolet region, but it is highly transparent in the visible…
Theory of tunnel magnetoresistance in magnetic tunnel junctions with hexagonal boron nitride barriers: mechanism and application to ferromagnetic alloy electrodes
Topological metal/semimetals (TMs) have emerged as a new frontier in the field of quantum materials. A few two-dimensional (2D) boron sheets have been suggested as Dirac materials, however, to date TMs made of three-dimensional (3D) boron structures have not been found. Herein, by means of systematic first principles computations, we discovered that a rather stable 3D boron allotrope, namely 3D-alpha' boron, is a nodal-chain semimetal. In the momentum space, six nodal lines and rings contact each other and form a novel spindle nodal chain. This 3D-alpha' boron can be formed by stacking 2D wigg…
We study the mechanical properties of two-dimensional (2D) boron, borophenes, by first-principles calculations. The recently synthesized borophene with 1/6 concentration of hollow hexagons (HH) is shown to have in-plane modulus C up to 210 N/m and bending stiffness as low as D = 0.39 eV. Thus, its Foppl-von Karman number per unit area, defined as C/D, reaches 568 nm-2, over twofold higher than graphene's value, establishing the borophene as one of the most flexible materials. Yet, the borophene has a specific modulus of 346 m2/s2 and ideal strengths of 16 N/m, rivaling those (453 m2/s2 and 34 …
We have performed a systematic first-principles computational study of the effects of impurity atoms (boron, carbon, nitrogen, oxygen, silicon, phosporus, and sulfur) on the orbital hybridization and bonding properties in the intermetallic alloy NiAl using a full-potential linear muffin-tin orbital method. The matrix elements in momentum space were used to calculate real-space properties: onsite parameters, partial densities of states, and local charges. In impurity atoms that are empirically known to be embrittler (N and O) we found that the 2s orbital is bound to the impurity and therefore d…
This Chapter deals with single layers of carbon (graphene) and hexagonal boron nitride on transition metal surfaces. The transition metal substrates take the role of the support and allow due to their catalytic activity the growth of perfect layers by means of chemical vapor deposition. The layers are sp2 hybridized honeycomb networks with strong in plane sigma and weaker pi bonds to the substrate and to the adsorbates. This hierarchy in bond strength causes anisotropic elastic properties, where the sp2 layers are stiff in plane and soft out of plane. A corrugation of these layers imposes a th…
In the present study, the structural and hitherto uninvestigated mechanical (elastic stiffness constants, machinability index, Cauchy pressure, anisotropy indices, brittleness/ductility, Poissons ratio), electronic, optical, and thermodynamic properties of novel boron-rich compounds B6X (X = S, Se) have been explored using density functional theory. The estimated structural lattice parameters were consistent with the prior report. The mechanical and dynamical stability of these compounds have been established theoretically. The materials are brittle in nature and elastically anisotropic. The v…
Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates remains significantly challenging because of high-bonding anisotropicity and complex growth kinetics than the conventional thin films growth, thus resulting in the formation of randomly oriented domains …
Boron carbide is a ceramic material with unique properties widely used in numerous, including armor, applications. Its mechanical properties, mechanism of compression, and limits of stability are of both scientific and practical value. Here, we report the behavior of the stoichiometric boron carbide B13C2 studied on single crystals up to 68 GPa. As revealed by synchrotron X-ray diffraction, B13C2 maintains its crystal structure and does not undergo phase transitions. Accurate measurements of the unit cell and B12 icosahedra volumes as a function of pressure led to conclusion that they reduce s…
From Amorphous to Amorphous-Crystalline Mixed-Phase Boron Nitride: Evolution of the Thermal and Elastic Properties
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST（加泰罗尼亚纳米科学与纳米技术研究所）；Faculty of Physics, Autonomous University of Barcelona（巴塞罗那自治大学物理系）；Universite Claude Bernard Lyon 1, CNRS, LMI, UMR 5615（里昂第一大学）；Faculty of Physics and Astronomy, Adam Mickiewicz University（亚当密茨凯维奇大学物理与天文学院）；International Iberian Nanotechnology Laboratory（伊比利亚纳米技术国际实验室）；ICREA（加泰罗尼亚高级研究院）
Super-hard and superconducting boron clathrates in the prediction of U-B compounds
State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology, ShanghaiTech University（上海科技大学物理科学与技术学院量子功能材料国家重点实验室）；School of Physics, Hangzhou Normal University（杭州师范大学物理学院）；National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University（南京大学物理学院固体微结构物理国家重点实验室先进微结构协同创新中心）；ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University（上海科技大学拓扑物理实验室）；Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University（上海科技大学高分辨电子显微镜上海市重点实验室）
Both the basic electronic structure of tetraborides, and the changes across the lanthanide series in $R$B$_4$ ($R$ = rare earth) compounds, are studied using the correlated band theory LDA+U method in the all-electron Full Potential Local Orbital (FPLO) code. A set of boron bonding bands can be identified that are well separated from the antibonding bands. Separately, the ``dimer B'' $2p_z$ orbital is non-bonding ({\it viz.} graphite and MgB$_2$), and mixes strongly with the metal 4d or $5d$ states that form the conduction states. The bonding bands are not entirely filled even for the trivalen…
Usually the ions in solid are in the positive oxidation states or in the negative oxidation state depending upon the chemical environment. It is highly unusual for an ion having both positive as well as negative oxidation state in a particular compound. Structural analysis suggest that the alkaline earth ammine borohydrides (AABH) with the chemical formula M (BH4)2(NH3)2 (M = Mg, Ca, or Sr) where hydrogen is present in +1 and -1 oxidation states. In order to understand the oxidation states of hydrogen and also the character of chemical bond present in AABH we have made charge density, electron…
Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys of graphene and boron nitride (BN), we consider here engineering the electronic structure and bandgap of C$_{2x}$B$_{1-x}$N$_{1-x}$ alloys via both compositional and configurational modification. We start from the BN end-member, which already has a large bandgap, and then show that (a) the bandgap can in principle be reduced to about 2 eV with moderate subst…
High-Throughput Discovery of Chiral Carbon-Boron Semimetals with Weyl Topology and Phonon-Mediated Superconductivity
University of Science and Technology of China（中国科学技术大学）；Wuhan Institute of Technology（武汉工程大学）；Hefei University of Technology（合肥工业大学）；Hanhai Lingchao Intelligent Computing (Shanghai) Technology Services Co., Ltd.（瀚海凌潮智能计算（上海）科技有限公司）
We address one of the main challenges to TiO2-photocatalysis, namely band gap narrowing, by combining nanostructural changes with doping. With this aim we compare TiO2's electronic properties for small 0D clusters, 1D nanorods and nanotubes, 2D layers, and 3D surface and bulk phases using different approximations within density functional theory and GW calculations. In particular, we propose very small (R < 0.5 nm) but surprisingly stable nanotubes with promising properties. The nanotubes are initially formed from TiO2 layers with the PtO2 structure, with the smallest (2,2) nanotube relaxing t…
We review the thin film growth, chemistry, and physical properties of Group 4-6 transition-metal diboride (TMB2) thin films with AlB2-type crystal structure (Strukturbericht designation C32). Industrial applications are growing rapidly as TMB2 begin competing with conventional refractory ceramics like carbides and nitrides, including pseudo-binaries such as Ti1-xAlxN. The TMB2 crystal structure comprises graphite-like honeycombed atomic sheets of B interleaved by hexagonal close-packed TM layers. From the C32 crystal structure stems unique properties including high melting point, hardness, and…
We employ first-principles calculations based density-functional-theory (DFT) approach to study electronic properties of partially and fully edge-hydrogenated armchair boron-nitrogen-carbon (BNC) nanoribbons (ABNCNRs), with widths between 0.85 nm to 2.3 nm. Due to the partial passivation of edges, electrons which do not participate in the bonding, form new energy states located near the Fermi-level. Because of these additional bands, some ABNCNRs exhibit metallic behavior, which is quite uncommon in armchair nanoribbons. Our calculations reveal that the metallic behavior is observed for the fo…
We investigate the adsorption of graphene sheets on h-BN substrates by means of first-principles calculations in the framework of adiabatic connection fluctuation-dissipation theory in the random phase approximation. We obtain adhesion energies for different crystallographic stacking configurations and show that the interlayer bonding is due to long-range van der Waals forces. The interplay of elastic and adhesion energies is shown to lead to stacking disorder and moiré structures. Band structure calculations reveal substrate induced mass terms in graphene which change their sign with the stac…
Discovering new materials with ultrahigh thermal conductivity has been a critical research frontier and driven by many important technological applications ranging from thermal management to energy science. Here we have rigorously investigated the fundamental lattice vibrational spectra in ternary compounds and determined the thermal conductivity using a predictive ab initio approach. Phonon transport in B-X-C (X = N, P, As) groups is systematically quantified with different crystal structures and high-order anharmonicity involving a four-phonon process. Our calculation found an ultrahigh room…
