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arXiv 0707.2415cond-mat.mtrl-scicond-mat.str-el
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稀土四硼化物RB $_4$:电子结构趋势分析

Rare-Earth Tetraborides RB$_4$: Analysis of Trends in the Electronic Structure

Z. P. Yin, W. E. Pickett

摘要:

用全电子全势定域轨道(FPLO)程序中的相关能带理论LDA+U方法研究了四硼化物的基本电子结构,以及$R$ B $_4$($R$ =稀土)化合物中镧系元素的变化.一组硼键带可以被识别,以及分离的反键带。另外,“二聚体B”$2p_z$轨道是非键合的({ \it即})。石墨和MgB $_2$),并与形成导电状态的金属4d或$5d$状态强烈混合。即使对于三价化合物,键合带也没有完全填充(因此阳离子$d$带具有一些填充),这说明当阳离子是二价时该结构缺乏稳定性(具有更多未填充的键合状态)。多数和少数,占领和未占领,国家的平均$4f$水平的趋势和解释。

英文摘要:

Both the basic electronic structure of tetraborides, and the changes across the lanthanide series in $R$B$_4$ ($R$ = rare earth) compounds, are studied using the correlated band theory LDA+U method in the all-electron Full Potential Local Orbital (FPLO) code. A set of boron bonding bands can be identified that are well separated from the antibonding bands. Separately, the ``dimer B'' $2p_z$ orbital is non-bonding ({\it viz.} graphite and MgB$_2$), and mixes strongly with the metal 4d or $5d$ states that form the conduction states. The bonding bands are not entirely filled even for the trivalent compounds (thus the cation $d$ bands have some filling), which accounts for the lack of stability of this structure when the cations are divalent (with more bonding states unfilled). The trends in the mean $4f$ level for both majority and minority, and occupied and unoccupied, states are presented and interpreted.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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