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arXiv 2008.02654cond-mat.mtrl-sci
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层状氧化硅晶体Si $_{3}$ O的光伏效率

Promising photovoltaic efficiency of a layered silicon oxide crystal Si$_{3}$O

Sejoong Kim, Kisung Chae, Young-Woo Son

摘要:

利用地球上丰富的元素,通过计算搜索和筛选新的功能材料,可以加速其能源应用的发展。基于一个国家的最先进的材料搜索算法和从头计算,我们证明了最近建议的稳定的氧化硅与层状结构(Si $_{3}$ O)作为一个理想的光伏材料。采用多体第一性原理方法,Si $_{3}$ O的单层和层状体分别具有1.85 eV和1.25 eV的直接准粒子带隙,而光学带隙约为1.2 eV,几乎与层数无关.光谱极限最大效率(SLME)估计为27%,厚度为0.5 μm,使其成为太阳能应用的有希望的候选者。

英文摘要:

Computational searching and screening of new functional materials exploiting earth abundant elements can accelerate developments of their energy applications. Based on a state-of-the-art materials search algorithm and ab initio calculations, we demonstrate a recently suggested stable silicon oxide with a layered structure (Si$_{3}$O) as an ideal photovoltaic material. With many-body first-principles approaches, the monolayer and layered bulk of Si$_{3}$O show direct quasiparticle gaps of 1.85 eV and 1.25 eV, respectively, while an optical gap of about 1.2 eV is nearly independent of the number of layers. Spectroscopic limited maximum efficiency (SLME) is estimated to be 27% for a thickness of 0.5 μm, making it a promising candidate for solar energy applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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