arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2007.06845cond-mat.mtrl-scicond-mat.othercond-mat.str-el
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相互作用对拓扑Dirac半金属Na3Bi能带结构的重要性

Importance of interactions for the band structure of the topological Dirac semimetal Na3Bi

I. Di Bernardo, J. Collins, W. Wu, J. Zhou, S. A. Yang, S. Ju, M. T. Edmonds, M. S. Fuhrer

摘要:

利用傅里叶变换扫描隧道光谱法测量了拓扑狄拉克半金属Na 3 Bi的能带色散,并对分子束外延生长的Na 3 Bi薄膜(001)表面的准粒子干涉进行了成像.我们发现最低导带和价带的速度分别为1.6 × 10^6 m/s和4.2 × 10^5 m/s,明显高于以前的理论预测。我们比较实验的能带色散理论能带结构计算usingan增加层次的近似自能校正由于相互作用:广义梯度近似(GGA),元GGA,海德-Scuseria-Ernzerhof交换相关功能(HSE 06),和GW方法。我们发现密度泛函理论方法普遍低估了电子速度。然而,我们发现显着改善的协议与日益复杂的描述的交换和相互作用的潜力,最终在合理的协议与实验获得的GW方法。结果表明,交换相关效应对确定Na_3Bi的电子结构有重要作用,并可能是其高速度的来源.电子速度与最近的实验结果一致,也可以解释在重电子掺杂的Na_3Bi中观察到的载流子迁移率。

英文摘要:

We experimentally measure the band dispersions of topological Dirac semimetal Na3Bi using Fourier-transform scanning tunneling spectroscopy to image quasiparticle interference on the (001) surface of molecular-beam epitaxy-grown Na3Bi thin films. We find that the velocities for the lowest-lying conduction and valencebands are 1.6x10^6 m/s and 4.2x10^5 m/s respectively, significantly higher than previous theoreticalpredictions. We compare the experimental band dispersions to the theoretical band structures calculated usingan increasing hierarchy of approximations of self-energy corrections due to interactions: generalized gradientapproximation (GGA), meta-GGA, Heyd-Scuseria-Ernzerhof exchange-correlation functional (HSE06), and GW methods. We find that density functional theory methods generally underestimate the electron velocities. However, we find significantly improved agreement with an increasingly sophisticated description of the exchange and interaction potential, culminating in reasonable agreement with experiments obtained by the GW method. The results indicate that exchange-correlation effects are important in determining the electronicstructure of this Na3Bi, and are likely the origin of the high velocity. The electron velocity is consistent withrecent experiments on ultrathin Na3Bi and also may explain the ultrahigh carrier mobility observed in heavilyelectron-doped Na3Bi.

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