Bismuth vanadate (BiVO4) has recently been under focus for its potential use in photocatalysis thanks to its well-suited absorption edge in the visible light range. Here, we characterize the optical absorption of a BiVO4 single crystal as a function of temperature and polarization direction by reflectance and transmittance spectroscopy. The optical band gap is found to be very sensitive to temperature, and to the monoclinic-to-tetragonal ferroelastic transition at 523K. The anisotropy, as measured by the difference in absorption edge for light polarized parallel and perpendicular to the principal axis, is reduced from 0.2 eV in the high-temperature tetragonal phase to 0.1 eV at ambient temperature. We show that this evolution is dominantly controlled by the ferroelastic shear strain. These findings provide a route for further optimization of bismuth-vanadate-based light absorbers in photocatalytic devices.
Uniaxial and biaxial strain approaches are usually implemented to switch the ferroelastic states, which play a key role in the application of the ferroics and shape memory materials. In this work, by using the first-principles calculations, we found not only uniaxial strain, but also shear strain can induce a novel ferroelastic switching, in which the van der Waals (vdW) layered direction rotates with the ferroelastic transition in layered bulk PdSe2. The shear strain induces ferroelastic switching with three times amplitude smaller than uniaxial strain. The novel three-states ferroelastic swi…
Mechanical strain can modify the structural and electronic properties of methylammonium lead iodide MAPbI3. The consequences of ferroelastic hysteresis, which involves the retention of structural memory upon cycles of deformation, in polycrystalline thin films of MAPbI3 are reported. Repeatedly bent films of MAPbI3 on flexible polyimide substrates were examined using Grazing Incidence Wide-Angle X-ray Scattering (GIWAXS) to quantitatively characterize the strain state, populations, and minimum sizes of twin domains. Approximate locations for the coercive stress and saturation on the ferroelast…
Materials that can produce large controllable strains are widely used in shape memory devices, actuators and sensors. Great efforts have been made to improve the strain outputs of various material systems. Among them, ferroelastic transitions underpin giant reversible strains in electrically-driven ferro/piezoelectrics and thermally- or magneticallydriven shape memory alloys. However, large-strain ferroelastic switching in conventional ferroelectrics is very challenging while magnetic and thermal controls are not desirable for applications. Here, we demonstrate an unprecedentedly large shear s…
Ferroelastic exciton splitting in hybrid perovskite nanowalls
Indian Institute of Science Education and Research, Bhopal（印度科学教育研究所博帕尔分校）；Institute of Materials Science of Seville (CSIC-US)（塞维利亚材料科学研究所）；S.N. Bose National Centre for Basic Sciences（S.N. 玻色基础科学国家中心）
We study the ferroelectricity in a one-dimensional system composed of a double helix SnIP with absorbing water molecules. Our ab initio calculations reveal two factors that are critical to the electrical polarization. The first one is the orientation of polarized water molecules staying in the R2 region of SnIP. The second one is the displacement of I atom which roots from subtle interaction with absorbed water molecules. A reasonable scenario of polarization flipping is proposed in this study. In the scenario, the water molecule is rolling-up with keeping the magnitude of its electrical dipol…
First-principles carrier mobility and optical absorption of strained ZnO with self-consistent Hubbard interactions
Korea Institute for Advanced Study（韩国高等研究院）；Oden Institute for Computational Engineering and Sciences, The University of Texas at Austin（德克萨斯大学奥斯汀分校奥登计算工程与科学学院）；Department of Physics, The University of Texas at Austin（德克萨斯大学奥斯汀分校物理系）
Hexagonal boron nitride is an indirect band gap material with a strong luminescence in the ultraviolet. This luminescence originates from bound excitons recombination assisted by different phonon modes. The coupling between excitons and phonons is so strong that the resulting light emission is as efficient as the one of direct band gap materials. In this manuscript we investigate how uniaxial strain modifies the electronic and optical properties of this material, and in particular how it affects the exciton-phonon coupling. Using a formulation of this coupling based on finite-difference displa…
We propose a novel excellent two-dimensional photocatalyst SnN3 monolayer using first-principles calculations. The stability of SnN3 monolayer have been examined via formation energy, phonon spectrum and ab initio molecular dynamics calculations. Large optical absorption capacity plays significant role in the enhancement of photocatalytic splitting of water. The SnN3 monolayer have ultra-high optical absorption capacity in visible region, which is as three and four times as that of SnP3 and MoS2 monolayer, respectively. Available potential and appropriate band positions indicating the ability …
The infrared optical, magneto-optical and magnetostrictive properties of CoFe2O4 single crystal are considered. The magneto-transmission and magneto-reflection of natural light in magnetostrictive CoFe2O4 spinel are studied in the Voight experimental geometry. These magneto-optical effects are very high and associate with a change of the fundamental absorption edge and impurity absorption bands under magnetic field. It is presented the effects strongly depend on both the magnitude and orientation of magnetic field relative to the crystallographic axes of the crystal. The clear connection betwe…
By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. We extend the room-temperature emission wavelength above ~4.0 μm upon post-growth strain relaxation in layers with uniform Sn content of 17 at.%. The fundamental mechanisms governing the optical emission are discussed based on temperature-dependent photoluminescence, absorption measurements, and theoretical simulations. Regardless of strain and composition, these analyses confirm that single-peak emission is always ob…
The atomic environments involved in the magnetostriction effect in CoFe$_2$O$_4$ and La$_{0.5}$Sr$_{0.5}$CoO$_3$ polycrystalline samples have been identified by differential extended x-ray absorption fine structure (DiffEXAFS) spectroscopy. We demonstrate that cobalt atoms at octahedral sites are responsible for their magnetostriction. The analysis of DiffEXAFS data indicates that the local-site magnetostrictive strains of Co atoms are reversed in these two oxides, in agreement with the macroscopic magnetostriction. For the CoFe$_2$O$_4$ spinel, a large negative strain along the (100) directio…
Using the density functional theory of electronic structure, we compute the anisotropic dielectric response of bulk black phosphorus subject to strain. Employing the obtained permittivity tensor, we solve Maxwell's equations and study the electromagnetic response of a layered structure comprising a film of black phosphorus stacked on a metallic substrate. Our results reveal that a small compressive or tensile strain, $\sim 4\%$, exerted either perpendicular or in the plane to the black phosphorus growth direction, efficiently controls the epsilon-near-zero response, and allows a perfect absorp…
This paper investigates strain effects on the electronic and optical properties of monolayer GaSe using first-principles calculations. The deformation significantly alters energy dispersion, band gap, and the band edge states of GaSe. The band gap evolution exhibits both linearly and nonlinearly with the strains, and strongly depending on the types of deformation and the direction of the modifications. The external mechanical strains also significantly tailor the optical properties of GaSe, the exciton binding energy is strongly reduced when the tensile strain is applied, while the opposite wa…
Topological insulator films are promising materials for optoelectronics due to a strong optical absorption and a thickness dependent band gap of the topological surface states. They are superior candidates for photodetector applications in the THz-infrared spectrum, with a potential performance higher than graphene. Using a first-principles $k\cdot p$ Hamiltonian, incorporating all symmetry-allowed terms to second order in the wave vector $k$, first order in the strain $ε$ and of order $εk$, we demonstrate significantly improved optoelectronic performance due to strain. For Bi$_2$Se$_3$ films …
Control of band structure in the altermagnetic candidate MnTe by temperature and strain
The University of Osaka（大阪大学）；Institute for Molecular Science（分子科学研究所）；The Institute for Solid State Physics, The University of Tokyo（东京大学固体物理研究所）；Institute for Chemical Research, Kyoto University（京都大学化学研究所）；Sogang University（西江大学）
The recent experimental synthesis of 2D graphitic C3N5 has attracted lot of interests in its electronic and optical properties and its comparison with other graphitic C3N4 and C3N3. To this end, we performed DFT calculations using more accurate HSE06 functional and estimated the corresponding electronic properties. From a comparative study of the band structures of C3N3, C3N4, and C3N5, we found that, the electronic band-gap decreases as 3.24 eV (C3N3) > 2.81 eV (C3N4) > 2.19 eV (C3N5) with increase in the number of nitrogen atoms in the unit cell of these graphitic carbon nitrides. Further, t…
2D MoS2 attracts increasing attention for its application in flexible electronics and photonic devices. For 2D material optoelectronic devices, light absorption of the molecularly thin 2D absorber would be one of the key limiting factors in device efficiency, and conventional photon management techniques are not necessarily compatible with them. In this paper, we show two semimetal composite nanostructures for synergistic photon management and strain-induced band gap engineering of 2D MoS2: (1) pseudo-periodic Sn nanodots, (2) conductive SnOx (x<1) core-shell nanoneedle structures. Without sop…
Potential applications of monolayer of transition metal dichalcogenides (TMDs) in optoelectronic and flexible devices are under heavy investigation. Although TMDs monolayers are highly robust to external mechanical fields, their electronic structure is sensitive to compressive and tensile strain. Besides, intrinsic point defects are present in synthesized samples of these two dimensional (2D) materials which leads to the modification of their electronic and optical properties. Presence of vacancy complexes leads to absorption with larger dipole matrix elements in comparison to the case of simp…
Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile strain of up to 5%. The strain profile modifies the local optoelectronic properties of the alternating compressive and tensile regions, which translates into a remarkable shift of the optical absorption band-edge of up to 1.2 eV between crests and valleys. Our experimental observations are supported by theoretical results from density functional theory calculatio…
The engineering of the optical response of materials is a paradigm that demands microscopic-level accuracy and reliable predictive theoretical tools. Here we compare and contrast the dispersive permittivity tensor, using both a low-energy effective model and density functional theory (DFT). As a representative material, phosphorene subject to strain is considered. Employing a low-energy model Hamiltonian with a Green's function current-current correlation function, we compute the dynamical optical conductivity and its associated permittivity tensor. For the DFT approach, first-principles calcu…
