Uniaxial and biaxial strain approaches are usually implemented to switch the ferroelastic states, which play a key role in the application of the ferroics and shape memory materials. In this work, by using the first-principles calculations, we found not only uniaxial strain, but also shear strain can induce a novel ferroelastic switching, in which the van der Waals (vdW) layered direction rotates with the ferroelastic transition in layered bulk PdSe2. The shear strain induces ferroelastic switching with three times amplitude smaller than uniaxial strain. The novel three-states ferroelastic switching in layered PdSe2 also occurs under shear strain. Our result shows that the shear strain could be used as an effective approach for manipulating the functionalities of layered materials in potential device applications.
Many proper and improper ferroelastic materials display (at sufficiently low measurement frequencies) a huge elastic softening below Tc. This giant elastic softening, which can be suppressed with uniaxial stress, is caused by domain wall motion. Here we shortly review our results on frequency and temperature dependent elastic measurements of some perovskites which exhibit improper ferroelastic phase transitions. We also present a new model - based on Landau-Ginzburg theory including long range interaction of needle shaped ferroelastic domains - which describes superelastic softening observed i…
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge potential in high-density information storage for their ultrafast spin dynamics and vanishingly small stray field. However, the switching of magnetic anisotropy of antiferromagnets via electric field remains elusive. Here we use ferroelastic strain from piezoelectric materials to switch the uniaxial magnetic anisotropy and the Néel order reversibly in antife…
In this work, we reported the observation of a novel planar topological Hall effect (PTHE) in single crystal of Fe3GeTe2, a paradigmatic two-dimensional ferromagnet with strong uniaxial anisotropy. The Hall effect and magnetoresistance varied periodically when the external magnetic field rotated in the ac (or bc) plane, while the PTHE emerged and maintained robust with field swept across the hard-magnetized ab plane. The PTHE covers the whole temperature region below Tc (~150 K) and a comparatively large value is observed at 100 K. Emergence of an internal gauge field was proposed to explain t…
The Lifshitz theory of the van der Waals force is extended for the case of an atom (molecule) interacting with a plane surface of an uniaxial crystal or with a long solid cylinder or cylindrical shell made of isotropic material or uniaxial crystal. For a microparticle near a semispace or flat plate made of an uniaxial crystal the exact expressions for the free energy of the van der Waals and Casimir-Polder interaction are presented. An approximate expression for the free energy of microparticle- cylinder interaction is obtained which becomes precise for microparticle-cylinder separations much …
Symmetry-Selective Strain Control of Spin-Momentum Locking and Spin Transport in Two-Dimensional Pentagonal Altermagnets
Inner Mongolia University（内蒙古大学）；Research Center for Quantum Physics and Technologies, School of Physical Science and Technology, Inner Mongolia University（内蒙古大学物理科学与技术学院量子物理与技术研究中心）；Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials at Universities of Inner Mongolia Autonomous Region, Inner Mongolia University（内蒙古自治区高校半导体光伏技术与能源材料重点实验室（内蒙古大学））；Inner Mongolia Key Laboratory of Microscale Physics and Atom Innovation, Inner Mongolia University（内蒙古微观物理与原子创新重点实验室（内蒙古大学））
The spin and valley polarizations and plasmonics in Van der Waals heterostructures of strained graphene monolayer on 2D transition metal dichalcogenide (GrTMD) substrate are reported in this communication. The substrate induced interactions (SII) involve sub-lattice-resolved, and enhanced intrinsic spin-orbit couplings, the extrinsic Rashba spin-orbit coupling (RSOC), and the orbital gap related to the transfer of the electronic charge from graphene to the substrate. Furthermore, magnetic impurity atoms are deposited to the graphene surface and the corresponding exchange field is included in t…
Bi2Se3 and Bi2Te3 are layered compounds of technological importance, being excellent thermoelectric materials as well as topological insulators. We report density functional theory calculations of the atomic, electronic and thermoelectric properties of strained bulk and thin film Bi2Se3 and Bi2Te3, focusing on an appropriate description of van der Waals interactions. The calculations show that the van der Waals Density functional with Cooper's exchange can reproduce closely the experimental interlayer distances in unstrained Bi2Se3 and Bi2Te3. Interestingly, we predict atomic structures that a…
We study the magnetisation dynamics of a bulk single crystal Cr$_2$Ge$_2$Te$_6$ (CGT), by means of broadband ferromagnetic resonance (FMR), for temperatures from 60 K down to 2 K. We determine the Kittel relations of the fundamental FMR mode as a function of frequency and static magnetic field for the magnetocrystalline easy - and hard - axis. The uniaxial magnetocrystalline anisotropy constant is extracted and compared with the saturation magnetisation, when normalised with their low temperature values. The ratios show a clear temperature dependence when plotted in the logarithmic scale, whic…
Two-dimensional (2D) van der Waals (vdW) materials show a range of profound physical properties that can be tailored through their incorporation in heterostructures and manipulated with external forces. The recent discovery of long-range ferromagnetic order down to atomic layers provides an additional degree of freedom in engineering 2D materials and their heterostructure devices for spintronics, valleytronics and magnetic tunnel junction switches. Here, using direct imaging by cryo-Lorentz transmission electron microscopy we show that topologically nontrivial magnetic-spin states, skyrmionic …
The van der Waals layered material CuInP2S6 features interesting functional behavior, including the existence of four uniaxial polarization states, polarization reversal against the electric field through Cu ion migration, a negative-capacitance regime, and reversible extraction of Cu ions. At the heart of these characteristics lies the high mobility of Cu ions, which also determines the spontaneous polarization. Therefore, Cu migration across the lattice results in unusual ferroelectric behavior. Here, we demonstrate how the interplay of polar and ionic properties provides a path to ionically…
The control of the local strain profile in 2D materials offers an invaluable tool for tailoring the electronic and photonic properties of solid-state devices. In this paper, we demonstrate a local engineering of the exciton photoluminescence (PL) energy of monolayer tungsten disulfide (WS2) by means of strain. We apply a local uniaxial stress to WS2 by exploiting electron-beam patterned and actuated polymeric micrometric artificial muscles (MAMs), which we implement onto monolithic synthetic WS2/graphene heterostructures. We show that MAMs are able to induce an in-plane stress to the top WS2 l…
We aim to understand how the van der Waals force between neutral adatoms and a graphene layer is modified by uniaxial strain and electron correlation effects. A detailed analysis is presented for three atoms (He, H, and Na) and graphene strain ranging from weak to moderately strong. We show that the van der Waals potential can be significantly enhanced by strain, and present applications of our results to the problem of elastic scattering of atoms from graphene. In particular we find that quantum reflection can be significantly suppressed by strain, meaning that dissipative inelastic effects n…
The van der Waals material CrSBr stands out as a promising two-dimensional magnet. Especially, its high magnetic ordering temperature and versatile magneto-transport properties make CrSBr an important candidate for new devices in the emergent field of two-dimensional magnetic materials. To date, the magnetic and structural properties of CrSBr have not been fully elucidated. Here, we report on the detailed temperature-dependent magnetic and structural properties of this material, by comprehensively combining neutron scattering, muon spin relaxation spectroscopy, synchrotron X-ray diffraction, a…
Response to uniaxial stress has become a major probe of electronic materials. Tuneable uniaxial stress may be applied using piezoelectric actuators, and so far two methods have been developed to couple samples to actuators. In one, actuators apply force along the length of a free, beam-like sample, allowing very large strains to be achieved. In the other, samples are affixed directly to piezoelectric actuators, allowing study of mechanically delicate materials. Here, we describe an approach that merges the two: thin samples are affixed to a substrate, that is then pressurized uniaxially using …
The magnetic properties of the van der Waals magnetic topological insulators MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ are investigated by magneto-transport measurements. We evidence that the relative strength of the inter-layer exchange coupling J to the uniaxial anisotropy K controls a transition from an A-type antiferromagnetic order to a ferromagnetic-like metamagnetic state. A bi-layer Stoner-Wohlfarth model allows us to describe this evolution, as well as the typical angular dependence of specific signatures, such as the spin-flop transition of the uniaxial antiferromagnet and the switching fiel…
The improved photocatalytic water splitting using 2D materials has technological importance for economically viable renewable energy. The present study focuses on the effect of uniaxial, biaxial, and vertical strain on the energy gap and band edge positions of C2N/MoS2 van der Waals heterostructures through first-principles density functional theory using PBE and SCAN functionals. The calculations establish that SCAN functional provides comparatively much better results as compared to the PBE for the band gap and band alignment study. The heterostructure exhibits a type- II band alignment whic…
Considerable research interest has been attracted to noncollinear magnetic structures for their intriguing physics and promising applications. In this work, based on relativistic density functional theory, we reveal the interesting magnetic order and relevant properties in monolayer RuF$_4$, which can be exfoliated from its bulk phase. Although the spins on Ru ions are almost antiferromagnetically aligned between nearest-neighbors, weak ferromagnetism is generated because of the antisymmetric Dzyaloshinskii-Moriya interaction as well as the single-ion anisotropy. A prominent magneto-optical Ke…
We evaluate the van der Waals (vdW) interaction energy at zero temperature between two undoped strained graphene layers separated by a finite distance. We consider the following three models for the anisotropic case: (a) where one of the two layers is uniaxially strained, (b) the two layers are strained in the same direction, and (c) one of the layers is strained in the perpendicular direction with respect to the other. We find that for all three models and given value of the electron-electron interaction coupling, the vdW interaction energy increases with increasing anisotropy. The effect is …
Comparing with the widely known transitional metal based van der Waals (vdW) materials, rare-earth based ones are rarely explored in the research of intrinsic two-dimensional (2D) magnetism. In this work, we report the physical properties of DyOCl, a rare-earth based vdW magnetic insulator with direct band gap of $\sim 5.72~eV$. The magnetic order of bulk DyOCl is determined by neutron scattering as the $A$-type antiferromagnetic structure below the Néel temperature $T_N=10~$K. The large magnetic moment near 10.1 $ μ_{B} $/Dy lies parallel to the $a$-axis with strong uniaxial magnetic anisotro…
Spin defects in hexagonal boron nitride as two-dimensional strain sensors
MOE Key Laboratory of Micro and Nano Systems for Aerospace, School of Mechanical Engineering, Northwestern Polytechnical University（西北工业大学机械工程学院微纳航天系统教育部重点实验室）；Laboratoire Charles Coulomb, Université de Montpellier and CNRS（法国国家科学研究中心蒙彼利埃大学夏尔·库隆实验室）；School of Sciences, Great Bay University（大湾区大学理学院）；State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University（浙江大学硅及先进半导体材料国家重点实验室）；Université de Toulouse, INSA-CNRS-UPS, LPCNO（图卢兹大学INSA-CNRS-UPS LPCNO）；CEMES-CNRS and Université de Toulouse（法国国家科学研究中心图卢兹大学Cemes）；Institut Universitaire de France（法兰西学院）
Discovery of a hybridization-wave electronic order in a van der Waals Kondo lattice
University of Chinese Academy of Sciences（中国科学院大学）；Chinese Academy of Sciences（中国科学院）；University of Science and Technology of China（中国科学技术大学）；Nanjing University（南京大学）；Beijing Institute of Technology（北京理工大学）
Magnetic anisotropy in the near-stoichiometric van der Waals ferromagnet Fe$_3$GeTe$_2$
Leibniz Institute for Solid State and Materials Research（莱布尼茨固体与材料研究所）；Institute for Solid State and Materials Physics, TU Dresden（德累斯顿工业大学固体与材料物理研究所）；Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences（S.N. 玻色基础科学国家中心凝聚态与材料物理系）；School of Physical Sciences, Indian Association for the Cultivation of Science（印度科学促进协会物理科学学院）
Moiré-induced symmetry breaking of charge order in van der Waals heterostructures
Donostia International Physics Center (DIPC)（圣塞巴斯蒂安国际物理中心）；Institute of Theoretical Physics, University of Hamburg（汉堡大学理论物理研究所）；Department of Physics, Indian Institute of Science Education and Research Bhopal（博帕尔印度科学教育研究系物理系）；The Hamburg Centre for Ultrafast Imaging（汉堡超快成像中心）；Centro de Física de Materiales (CSIC-UPV/EHU)（材料物理中心（西班牙国家科研委员会-巴斯克国立大学/巴斯克国立理工大学））；Max Planck Institute for the Structure and Dynamics of Matter（马克斯·普朗克物质结构与动力学研究所）；Yusuf Hamied Department of Chemistry, University of Cambridge（剑桥大学尤瑟夫·哈米德化学系）；Dept. Polymers and Advanced Materials, University of the Basque Country (UPV/EHU)（巴斯克国立大学（UPV/EHU）聚合物与先进材料系）；Ikerbasque, Basque Foundation for Science（伊克拉巴斯科，巴斯克科学基金会）
We demonstrate that stacking layered materials allows a novel type of strain engineering where each layer is strained independently, which we call heterostrain. We combine detailed structural and spectroscopic measurements with tight-binding calculations to show that small uniaxial heterostrain suppresses Dirac cones and leads to the emergence of flat bands in twisted graphene layers (TGLs). Moreover, we demonstrate that heterostrain reconstructs much more severely the energy spectrum of TGLs than homostrain for which both layers are strained identically ; a result which should apply to virtua…
The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD) measurements. This sluggish transition is shown to occur at 35 GPa. Transport measurements show no evidence of superconductivity to the lowest measured temperature (~ 2 K). The structure results presented here differ from earlier in-situ work that subjected the sample to a different pressure state, suggesting that in NiPS3 the phase stability fields are highly depen…
The possibility of tailoring the critical strain of 2D materials will be crucial for the fabrication of flexible devices. In this paper, the fracture in polycrystalline MoS2 films with two different grain orientations is studied at the micro- and nanoscale using electron microscopy. The critical uniaxial strain is determined to be approximately 5% and independent of the sample morphology. However, electron beam irradiation is found to enhance the interaction between the MoS2 and the PDMS substrates, leading to an increased critical strain that can exceed 10%. This enhancement of strain resista…
Graphene has shown great potential for modulating infrared (IR) light in devices as small as 350 nm. At these length scales, nanoscale features of devices, and their interaction with light, can be expected to play a significant role in device performance. Bubbles in van der Waals heterostructures are one such feature, which have recently attracted considerable attention thanks to their ability to modify the optoelectronic properties of 2D materials through strain. Here we use scattering-type scanning near-field optical microscopy (sSNOM) to measure the nanoscale IR response from a network of v…
