Polar phonons can induce electric fields in an adjacent layer, whether non-polar or polar, producing remote phonon scattering of electrons. Treatment of remote phonon scattering has been based on the dielectric continuum model which takes only the electrical boundary conditions into account. We show that crystals whose polar modes satisfy both mechanical and electric boundary conditions cannot introduce remote phonon effects in the absence of dispersion. Further, even in the presence of dispersion, remote phonon effects are negligible, as a consequence of the necessity of satisfying mechanical boundary conditions.
We demonstrate the atomic layer deposition of high-quality HfO2 film on graphene and report the magnitude of remote oxide phonon (ROP) scattering in dual-oxide graphene transistors. Top gates with 30 nm HfO2 oxide layer exhibit excellent doping capacity of greater than 1.5x10^(13)/cm^(2). The carrier mobility in HfO2-covered graphene reaches 20,000 cm^(2)/Vs at low temperature, which is the highest among oxide-covered graphene and compares to that of pristine samples. The temperature-dependent resistivity exhibits the effect of ROP scattering from both the SiO2 substrate and the HfO2 over-laye…
The thermoelectric transport coefficients of electrons in two recently emerged transition metal dichalcogenides(TMD), MoS2 and WSe2, are calculated by solving Boltzmann Transport equation and coupled electrical and thermal current equations using Rode iterative technique. Scattering from localized donor impurities, acoustic deformation potential, longitudinal optical (LO) phonons, and substrate induced remote phonon modes are taken into account. Hybridization of TMD plasmon with remote phonon modes is investigated. Dynamic screening under linear polarization response is explored in TMDs sittin…
The spectral Matthiessen's rule is commonly used to calculate the total phonon scattering rate when multiple scattering mechanisms exist. Here we predict the spectral phonon relaxation time $τ$ of defective bulk silicon using normal mode analysis based on molecular dynamics, and show that the spectral Matthiessen's rule is not accurate due to the neglect of the coupling between anharmonic phonon-phonon scattering $τ_a^{-1}$ and phonon-impurity scattering $τ_i^{-1}$. As a result, the spectral Matthiessen's rule underestimates the total phonon scattering rate, and hence overestimates the thermal…
Recently, first principle-based prediction of lattice thermal conductivity $κ$ from the perturbation theory has achieved significant success. However, it only includes three-phonon scattering due to the assumption that four-phonon and higher-order processes are generally unimportant. Also, directly evaluating the scattering rates of four-phonon and higher-order processes has been a long-standing challenge. In this work, however, we have developed a formalism to explicitly determine quantum mechanical scattering probability matrices for four-phonon scattering in the full Brillouin Zone, and by …
Interatomic potentials beyond quadratic order provide scattering sources for phonon transport in lattice. By using a weakly-interacting interface model, we investigated the relation between the order of interatomic potential and the multiple-phonon scattering process. We find that high order interatomic potential not only causes multiple-phonon scattering processes, but also has significant impacts on elastic phonon scattering processes. Using fourth order potential as an example, we show that it can significantly affects elastic phonon scatterings, through the formation of localized phonons. …
The control of phonon scattering by interfaces is critical to the manipulation of heat conduction in composite materials and semiconducting nanostructures. However, one of the factors limiting our understanding of elastic phonon scattering is the lack of a computationally efficient approach for describing the phenomenon in a manner that accounts for the atomistic configuration of the interface and the exact bulk phonon dispersion. Building on the atomistic Green's function (AGF) technique for ballistic phonon transport, we formulate an atomistic S-matrix method that treats bulk phonon modes as…
The band convergence strategy, which improves Seebeck coefficient by inducing multi-valley in bandstructures, has been widely used in thermoelectric performance (TE) enhancing. However, the phonon-assisted intervalley scattering effect is neglected and the mode-selection rules remain unclear. In this work, TE properties for $α$-, $β$- and $γ$-PbP are intestigated under the consideration of full mode-, energy- and momentum-resolved electron-phonon interactions (EPI). The group theory is used to analyze the selection rules for EPI matrix elements. Our calculations reveal that, the intervalley sc…
Electron-phonon scatterings in solid-state systems are pivotal processes in determining many key physical quantities such as charge carrier mobilities and thermal conductivities. Here, we report on the direct probing of phonon mode specific electron-phonon scatterings in layered semiconducting transition metal dichalcogenides WSe2, MoSe2, WS2, and MoS2 through inelastic electron tunneling spectroscopy measurements, quantum transport simulations, and density functional calculation. We experimentally and theoretically characterize momentum-conserving single- and two-phonon electron-phonon scatte…
Electron scattering rates in metallic single-walled carbon nanotubes are studied using an atomic force microscope as an electrical probe. From the scaling of the resistance of the same nanotube with length in the low and high bias regimes, the mean free paths for both regimes are inferred. The observed scattering rates are consistent with calculations for acoustic phonon scattering at low biases and zone boundary/optical phonon scattering at high biases.
Electron-hole generation and recombination rates for intravalley and intervalley phonon scattering in Graphene are presented. The transverse and the longitudinal optical phonon modes ($E_{2g}$-modes) near the zone center ($Γ$-point) contribute to intravalley interband carrier scattering. At the zone edge ($K(K')$-point), only the transverse optical phonon mode ($A'_{1}$-mode) contributes significantly to intervalley interband scattering with recombination rates faster than those due to zone center phonons. The calculated recombination times range from less than a picosecond to more than hundre…
We investigate the spin-nonconserving relaxation channel of excitons by their couplings with phonons in two-dimensional transition metal dichalcogenides using $\textit{ab initio}$ approaches. Combining $\text{GW}$-Bethe-Salpeter equation method and density functional perturbation theory, we calculate the electron-phonon and exciton-phonon coupling matrix elements for the spin-flip scattering in monolayer WSe$_{\text{2}}$, and further analyze the microscopic mechanisms influencing these scattering strengths. We find that phonons could produce effective in-plane magnetic fields which flip spin o…
We investigate the effects of electron and acoustic-phonon confinement on the low-field electron mobility of thin square silicon nanowires (SiNWs) that are surrounded by SiO$_2$ and gated. We employ a self-consistent Poisson-Schrödinger-Monte Carlo solver that accounts for scattering due to acoustic phonons (confined and bulk), intervalley phonons, and the Si/SiO$_2$ surface roughness. The wires considered have cross sections between 3 $\times$ 3 nm$^2$ and 8 $\times$ 8 nm$^2$. For larger wires, as expected, the dependence of the mobility on the transverse field from the gate is pronounced. At…
The complex interaction between transverse acoustic (TA) phonon, transverse optic (TO) phonon and polar nano-domains (PND) in the relaxor ferroelectric KTa1-xNbxO3 (KTN) is studied by means of high resolution diffuse and inelastic neutron scattering. The experimental results and a comparison with lead relaxors, suggest a new scattering mechanism of the TA phonon by localized modes in PNDs. A theoretical model is developed, which accurately predicts the evolution of the TA damping with temperature and wavevector. Such a mechanism suggests the possible use of high frequency acoustic modes for th…
In spite of their importance for understanding phonon transport phenomena in thin films and polycrystalline solids, the effects of boundary roughness scattering on phonon specularity and coherence are poorly understood because there is no general method for predicting their dependence on phonon momentum, frequency, branch and boundary morphology. Using the recently formulated atomistic S-matrix method, we develop a theory of boundary roughness scattering to determine the mode-resolved phonon coherence and specularity parameters from the scattering amplitudes. To illustrate the theory, we apply…
Time dynamics of photoexcited electron-hole pairs is important for a number of technologies, in particular solar cells. We combined ultrafast pump-probe Raman scattering and photoemission to directly follow electron-hole excitations as well as the G-phonon in graphite after an excitation by an intense laser pulse. This phonon is known to couple relatively strongly to electrons. Cross-correlating effective electronic and phonon temperatures places new constraints on model-based fits. The accepted two-temperature model predicts that G-phonon population should start to increase as soon as excited…
Van der Waals heterostructures provide a versatile tool to not only protect or control, but also enhance the properties of a 2D material. We use ab initio calculations and semi-analytical models to find strategies which boost the mobility of a current-carrying 2D semiconductor within an heterostructure. Free-carrier screening from a metallic "screener" layer remotely suppresses electron-phonon interactions in the current-carrying layer. This concept is most effective in 2D semiconductors whose scattering is dominated by screenable electron-phonon interactions, and in particular the Fröhlich co…
Zone-center optical phonon linewidth is a key parameter for infrared and Raman spectra as well as the Lorenz oscillator model. While three-phonon scattering was often assumed to be the leading contribution, in this work we find, surprisingly, that higher-order phonon scattering universally plays a significant or even dominant role over three-phonon scattering at room temperature, and more so at elevated temperatures, for a wide range of materials including diamond, Si, Ge, boron arsenide (BAs), cubic silicon carbide (3C-SiC), and $α$-quartz. This is enabled by the large fourphonon scattering p…
Recent studies reveal that four-phonon scattering is generally important in determining thermal conductivities of solids. However, these studies have been focused on materials where thermal conductivity $κ$ is dominated by acoustic phonons, and the impact of four phonon scattering, although significant, is still generally smaller than three-phonon scattering. In this work, taking AlSb as example, we demonstrated that four-phonon scattering is even more critical to three-phonon scattering as it diminishes optical phonon thermal transport, and therefore significantly reduces the thermal conducti…
Understanding the mechanisms of thermal conduction in graphene is a long-lasting research topic, due to its high thermal conductivity. Peierls-Boltzmann transport equation (PBTE) based studies have revealed many unique phonon transport properties in graphene, but most previous works only considered three-phonon scatterings and relied on interatomic force constants (IFCs) extracted at 0 K. In this paper, we explore the roles of four-phonon scatterings and the temperature dependent IFCs on phonon transport in graphene through our PBTE calculations. We demonstrate that the strength of four-phonon…
The physics of mutual interaction of phonon quasiparticles with electronic spin degrees of freedom, leading to unusual transport phenomena of spin and heat, has been a subject of continuing interests for decades. Despite its pivotal role in transport processes, the effect of spin-phonon coupling on the phonon system, especially acoustic phonon properties, has so far been elusive. By means of inelastic neutron scattering and first-principles calculations, anomalous scattering spectral intensity from acoustic phonons was identified in the exemplary collinear antiferromagnetic nickel (II) oxide, …
Anharmonic phonon-phonon scattering serves a critical role in heat conduction in solids. Previous studies have identified many selection rules for possible phonon-phonon scattering channels imposed by phonon energy and momentum conservation conditions and crystal symmetry. However, the crystal-symmetry-based selection rules have mostly been \textit{ad hoc} so far in selected materials, and a general formalism that can summarize known selection rules and lead to new ones in any given crystal is still lacking. In this work, we apply a general formalism for symmetry-based scattering selection rul…
Point defects in solids such as vacancy and dopants often cause large thermal resistance. Because the lattice site occupied by a point defect has a much smaller size than phonon wavelengths, the scattering of thermal acoustic phonons by point defects in solids has been widely assumed to be the Rayleigh scattering type. In contrast to this conventional perception, using an ab initio Green's function approach, we show that the scattering by point defects in PbTe and GeTe exhibits Mie scattering characterized by a weaker frequency dependence of the scattering rates and highly asymmetric scatterin…
Phonon energies at finite temperatures shift away from their harmonic values due to anharmonicity. In this paper, we have realized the rigorous calculation of phonon energy shifts of silicon by three and four-phonon scattering from first principles. The anharmonic fourth-order force constants are calculated by considering up to the fifth nearest neighbors. The results agree reasonably well with available data from inelastic neutron scattering throughout the Brillouin zone. Surprisingly, the frequency shifts of optical phonon modes near the $Γ$ point are sensitive to the cutoff radius of the fo…
The thermal conductivity $κ$ of a material is an important parameter in many different applications. Optimization strategies of $κ$ often require insight into the dominant phonon scattering processes of the material under study. The Callaway model is widely used as an experimentalist's tool to analyze the lattice part of the thermal conductivity, $κ_l$. Here, we investigate how deviations from the implicitly assumed linear phonon dispersion relation affect $κ_l$ and in turn conclusions regarding the relevant phonon scattering processes. As an example, we show for the half-Heusler system (Hf,Zr…
A model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high speed behavior of short gate length GaN transistors. The model is able to resolve these peculiarities, and provides a simple way to explain transistor behavior in any semiconductor material system in which electron-optical phonon scattering is strong.
Phonon chirality has attracted intensive attention since it breaks the traditional cognition that phonons are linear propagating bosons. This new quasiparticle property has been extensively studied theoretically and experimentally. However, characterization of the phonon chirality throughout the full Brillouin zone is still not possible due to the lack of available experimental tools. In this work, phonon dispersion and chirality of tungsten carbide were investigated by millielectronvolt energy-resolution inelastic X-ray scattering. The atomistic calculation indicates that in-plane longitudina…
The magnetization response of bulk ferromagnets after excitation by an ultrashort optical pulse is calculated using a dynamical model of the Elliott-Yafet type that includes the effects of the spin-orbit interaction in the ab-initio ferromagnetic band structure, the electron-phonon interaction at the level of Boltzmann scattering integrals, and dynamical changes in the temperature of the phonon bath. Using realistic parameters for the ultrashort optical pulse, the computed maximum magnetization quenching achievable with electron-phonon scattering in a fixed band structure is much smaller than …
Phonons in graphitic materials exhibit strong normal scattering (N-scattering) compared to umklapp scattering (U-scattering). The strong N-scattering cause collective phonon flow, unlike the relatively common cases where U-scattering is dominant. If graphitic materials have finite size and contact with hot and cold reservoirs emitting phonons with non-collective distribution, N-scattering change the non-collective phonon flow to the collective phonon flow near the interface between graphitic material and a heat reservoir. We study the thermal resistance by N-scattering during the transition be…
He atom scattering has been demonstrated to be a sensitive probe of the electron-phonon interaction parameter $λ$ at metal and metal-overlayer surfaces. Here it is shown that the theory linking $λ$ to the thermal attenuation of atom scattering spectra (the Debye-Waller factor), can be applied to topological semimetal surfaces, like the quasi-one dimensional charge-density-wave system Bi(114) and the layered pnictogen chalcogenides.
Understanding phonon scattering by topological defects in graphene is of particular interest for thermal management in graphene-based devices. We present a study that quantifies the roles of the different mechanisms governing defect phonon scattering by comparing the effects of ten different defect structures using molecular dynamics. Our results show that phonon scattering is mainly influenced by mass density difference, with general trends governed by the defect formation energy and typical softening behaviors in the phonon density of state. The phonon scattering cross-section is found to be…
The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of nanoribbons, and from acoustic phonons are as important as line edge roughness scattering. The relative importance of these scattering mechanisms varies with the temperature, Fermi level location, and the width of the ribbons. Based on the analysis, strategies for improvement of low-field mobility are described.
The mechanisms causing the reduction in lattice thermal conductivity in highly P- and B-doped Si are looked into in detail. Scattering rates of phonons by point defects, as well as by electrons, are calculated from first principles. Lattice thermal conductivities are calculated considering these scattering mechanisms both individually and together. It is found that at low carrier concentrations and temperatures phonon scattering by electrons is dominant and can reproduce the experimental thermal conductivity reduction. However, at higher doping concentrations the scattering rates of phonons by…
We investigate ultrafast phonon dynamics in the Bi$_{1-x}$Sb$_{x}$ alloy system for various compositions $x$ using a reflective femtosecond pump-probe technique. The coherent optical phonons corresponding to the A$_{1g}$ local vibrational modes of Bi-Bi, Bi-Sb, and Sb-Sb are generated and observed in the time domain with a few picoseconds dephasing time. The frequencies of the coherent optical phonons were found to change as the Sb composition $x$ was varied, and more importantly, the relaxation time of those phonon modes was dramatically reduced for $x$ values in the range 0.5--0.8. We argue …
We study the electron and phonon thermalization in simple metals excited by a laser pulse. The thermalization is investigated numerically by solving the Boltzmann transport equation taking into account all the relevant scattering mechanism: the electron-electron, electron-phonon (e-ph), phonon-electron (ph-e), and phonon-phonon (ph-ph) scatterings. In the initial stage of the relaxation, most of the excitation energy is transferred from the electrons to phonons through the e-ph scattering. This creates hot high-frequency phonons due to the ph-e scatterings, followed by an energy redistribution…
Inelastic scattering experiments are key methods for mapping the full dispersion of fundamental excitations of solids in the ground as well as non-equilibrium states. A quantitative analysis of inelastic scattering in terms of phonon excitations requires identifying the role of multi-phonon processes. Here, we develop an efficient first-principles methodology for calculating the all-phonon quantum mechanical structure factor of solids. We demonstrate our method by obtaining excellent agreement between measurements and calculations of the diffuse scattering patterns of black phosphorus, showing…
We investigate remote surface scattering (RSR) by the SiO$_2$/HfO$_2$ interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/SiO$_2$ and SiO$_2$/HfO$_2$ interfaces. Therefore, surface roughness and remote surface roughness can not be modeled as two independent mechanisms. RSR tends to enhance the total mobility when the Si/SiO$_2$ interface and SiO$_2$ thickness profiles are correlated, and to decrease the total mobility when they…
Phonon scattering by electrons, or "phonon-electron scattering", has been recognized as a significant scattering channel for phonons in materials with high electron concentration, such as thermoelectrics and nanoelectronics, even at room temperature. Despite the abundant previous studies of phonon-electron scattering in different types of three-dimensional (3D) bulk materials, its impact on the phonon transport, and thus the heat transfer properties, of two-dimensional (2D) materials has not been understood. In this work, we apply ab initio methods to calculate the phonon-electron scattering r…
Theory of the remote Coulomb impurity scattering in single--wall carbon nanotubes is developed within one--electron approximation. Boltzmann equation is solved within drift--diffusion model to obtain the tube conductivity. The conductivity depends on the type of the nanotube bandstructure (metal or semiconductor) and on the electron Fermi level. We found exponential dependence of the conductivity on the Fermi energy due to the Coulomb scattering rate has a strong dependence on the momentum transfer. We calculate intra-- and inter--subband scattering rates and present general expressions for th…
It is known that carrier mobility in layered semiconductors generally increases from two-dimension (2D) to three-dimension due to suppressed scattering channels resulting from decreased densities of electron and phonon states. In this work, we find an abnormal decrease of electron mobility from monolayer to bulk MoS2. By carefully analyzing the scattering mechanisms, we can attribute such abnormality to the stronger intravalley scattering in the monolayer but weaker intervalley scattering caused by less intervalley scattering channels and weaker corresponding electron-phonon couplings compared…
Using ab initio calculations, we show that the hidden influence of selection rules on three-phonon scattering can be exposed through anomalous signatures in the pressure ($P$) and temperature ($T$) dependence of the thermal conductivities, $κ$, of certain compounds. Boron phosphide reveals such underlying behavior through an exceptionally sharp initial rise in $κ$ with increasing $P$, which may be the steepest of any material, and also a peak and decrease in $κ$ at high $P$. These features are in stark contrast to the measured behavior for many solids, and occur at experimentally accessible co…
Time-resolved diffuse scattering experiments have gained increasing attention due to their potential to reveal non-equilibrium dynamics of crystal lattice vibrations with full momentum resolution. Although progress has been made in interpreting experimental data on the basis of one-phonon scattering, understanding the role of individual phonons can be sometimes hindered by multi-phonon excitations. In Ref. [{\it arXiv:2103.10108}] we have introduced a rigorous approach for the calculation of the all-phonon inelastic scattering intensity of solids from first-principles. In the present work, we …
We report an investigation of perovskite-type LaNiO3 thin films by Raman scattering in both various scattering configurations and as a function of temperature. The room-temperature Raman spectra and the associated phonon mode assignment provide reference data for phonon calculations and for the use of Raman scattering for structural investigations of LaNiO3, namely the effect of strain in thin films or heterostructures. The temperature-dependent Raman spectra from 80 to 900 K are characterized by the softening of the rotational A1g mode, which suggest a decreasing rhombohedral distortion towar…
We investigate the spin-dependent electron-phonon scatterings of the $L$ and $Γ$ valleys and the band structure near the conduction band minima in germanium. We first construct a $16\times16$ ${\bm k}\cdot{\bm p}$ Hamiltonian in the vicinity of the $L$ point in germanium, which ensures the correctness of the band structure of the lowest three conduction bands and highest two valence bands. This Hamiltonian facilitates the analysis of the spin-related properties of the conduction electrons. We then demonstrate the phonon-induced electron scatterings of the $L$ and $Γ$ valleys, i.e., the intra-$…
The experimental data on the thermal conductivity of ortho-parahydrogen solutions are analyzed on the basis of a relaxation-time model taking account of configurational relaxation of the ortho subsystem. The influence of configurational relaxation on the thermal conductivity is analyzed using resonance scattering of phonons by pair clusters of orthomolecules taking account of their rotational spectrum.
We present first principles calculations of the phonon dispersions of Bi2Te3 and discuss these in relation to the acoustic phonon interface scattering in ceramics. The phonon dispersions show agreement with what is known from neutron scattering for the optic modes. We find a difference between the generalized gradient approximation and local density results for the acoustic branches. This is a consequence of an artificial compression of the van der Waals bonded gaps in the Bi2Te3 structure when using the generalized gradient approximation. As a result local density approximation calculations p…
In ionic Raman scattering, infrared-active phonons mediate a scattering process that results in the creation or destruction of a Raman-active phonon. This mechanism relies on nonlinear interactions between phonons and has in recent years been associated with a variety of emergent lattice-driven phenomena in complex transition-metal oxides, but the underlying mechanism is often obscured by the presence of multiple coupled order parameters in play. Here, we use time-resolved spectroscopy to compare coherent phonons generated by ionic Raman scattering with those created by more conventional elect…
Cold neutron scattering experiments have been performed to explore the energy, temperature, and wave-vector dependence of the diffuse scattering and the transverse acoustic (TA) phonons in the relaxor PbMg(1/3)Nb(2/3)O3. We have observed a weak, but definitive, diffuse scattering cross section above the Burns temperature T_d ~ 600 K. This cross section, which is most likely caused by chemical short-range order, persists down to 100 K, and coexists with the much stronger diffuse scattering that is attributed to the polar nanoregions. A systematic study of the TA phonon around (1, 1, 0) has also…
