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arXiv 2003.02621cond-mat.str-el
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$ν=5/2$量子霍尔效应中Pfweanan和anti-Pfweanan序的拓扑界面

Topological Interface between Pfaffian and anti-Pfaffian Order in $ν=5/2$ Quantum Hall Effect

W. Zhu, D. N. Sheng, Kun Yang

摘要:

最近的热霍尔实验为$ν=5/2$量子霍尔效应的问题注入了新的能量,这激发了基于形成由Pfronan和反Pfronan拓扑序组成的介观水坑的新解释。在这里,我们研究的Pfronan和反Pfronan状态之间的接口,这可能在热输运中发挥至关重要的作用,通过国家的最先进的密度矩阵重整化群模拟的圆柱体几何形状。我们提供了令人信服的证据表明,边缘模式的Pfweian和反Pfweian状态强烈杂交彼此周围的界面。此外,我们证明了一个内在的电偶极矩出现在界面处,类似于夹在N型和p型半导体之间的“p-n”结。重要的是,我们阐明了这种偶极矩的拓扑起源,其形成是为了平衡体Pfwean和反Pfwean状态的引导中心霍尔粘度的失配。

英文摘要:

Recent thermal Hall experiment pumped new energy into the problem of $ν=5/2$ quantum Hall effect, which motivated novel interpretations based on formation of mesoscopic puddles made of Pfaffian and anti-Pfaffian topological orders. Here, we study an interface between the Pfaffian and anti-Pfaffian states, which may play crucial roles in thermal transport, by means of state-of-the-art density-matrix renormalization group simulations on the cylinder geometry. We provide compelling evidences that indicate the edge modes of the Pfaffian and anti-Pfaffian state strongly hybridize with each other around the interface. Moreover, we demonstrate an intrinsic electric dipole moment emerges at the interface, similar to the "p-n" junction sandwiched between N-type and P-type semiconductor. Importantly, we elucidate the topological origin of this dipole moment, whose formation is to counterbalance the mismatch of guiding-center Hall viscosity of bulk Pfaffian and anti-Pfaffian state.

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